DATA SHEET
SILICON TRANSISTOR
2SC3841
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1986
DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recommendd
for Hybried Integrated Circuit and other applications.
FEATURES
High Gain Bandwidth Procuct; f
T
= 4.0 GHz TYP.
Low Collector to Base Time Constant; C
C
r
b'b
= 4.0 ps TYP.
Low Output Capacitance; C
ob
= 1.5 pF MAX.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Maximum Voltages and Current
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
30
mA
Maximum Power Dissipation
Total Power Dissipation
P
T
200
mW
Maximum Power Temperutures
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
55 to +150
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
0.1
A
V
CB
= 10 V, I
E
= 0
DC Current Gain
h
FE
40
100
200
V
CE
= 10 V, I
C
= 5.0 mA
Collector Saturation Voltage
V
CE(sat)
0.09
0.5
V
I
C
= 10 mA, I
B
= 1.0 mA
Gain Bandwidth Product
f
T
2.5
4.0
GHz
V
CE
= 10 V, I
E
=
5.0 mA
Output Capacitance
C
ob
0.85
1.5
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Collector to Base Time Constatnt
C
C
r
b'b
4.0
10.0
ps
V
CE
= 10 V, I
E
=
5.0 mA, f = 31.9 MHz
h
FE
Classification
Class
T62/P *
T63/Q *
T64/R *
Marking
T62
T63
T64
h
FE
40 to 80
60 to 120
100 to 200
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.80.2
2.90.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1
-
0.05
0.4
+0.1
-
0.05
0.16
+0.1
-
0.06
0.65
+0.1
-
0.15
2
2SC3841
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
h
FE
-DC Current Gain
0.1
0.2
0.5
1
2
5
10
20
40
0.05
20
10
5
50
100
200
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
f
T
-Gain Bandwidth Product-GHz
1
2
5
10
20
40
0.5
0.1
0.2
0.5
1
2
5
7
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
I
C
-Collector Current-mA
0.6
0.7
0.8
0.9
0.5
1
2
5
10
20
50
70
INSERTION GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
|S
21e
|
2
-Insertion Gain-dB
1
2
5
10
20
40
0.5
0
5
10
15
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
V
CB
-Collector to Base Voltage-V
C
ob
-Output Capacitance pF
1
2
5
10
20
0.5
2
1
3
f = 1.0 MHz
C
C
.r
b'b
vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
C
C
. r
b'b
-Collector to Base Time Constant-ps
0.5
1
2
5
10
20
40
0
4
2
6
8
10
V
CE
= 10 V
I
E
=
-
50 mA
f = 39.1 MHz
V
CE
= 10 V
f = 1.0 GHz
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