Document Outline
- COVER
- DESCRIPTION
- FEATURES
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- PACKAGE DIMENSIONS
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- TYPICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
MOS FIELD EFFECT TRANSISTOR
2SK2141
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
R
DS(on)
= 1.1
MAX. (V
GS
= 10 V, I
D
= 3.0 A)
L
OW
C
iss
C
iss
= 1150 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
V
DSS
600
V
Gate to Source Voltage
V
GSS
30
V
Drain Current (DC)
I
D (DC)
6.0
A
Drain Current (pulse)
I
D (pulse)
*
24
A
Total Power Dissipation (T
C
= 25
C) P
T1
35
W
Total Power Dissipation (T
a
= 25
C) P
T2
2.0
W
Storage Temperature
T
stg
55 to +150
C
Channel Temperature
T
ch
150
C
Single Avalanche Current
I
AS
**
6.0
A
Single Avalanche Energy
E
AS
**
12
mJ
*PW
10
s, Duty Cycle
1%
**Starting T
ch
= 25
C, R
G
= 25
, V
GS
= 20 V
0
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
TC-2514
(O.D. No.
TC8073)
Date Published
January 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeters)
10.0 0.3
3.2 0.2
4.5 0.2
2.7 0.2
2.5 0.1
0.65 0.1
1.5 0.2
2.54 TYP.
1.3 0.2
2.54 TYP.
0.7 0.1
4 0.2
15.0 0.3
12.0 0.2
3 0.1
1
2 3
1. Gate
2. Drain
3. Source
13.5 MIN.
Body diode
Source (S)
Drain (D)
Gate (G)
1
2 3
ISOLATED TO-220 (MP-45F)
1995
DATA SHEET
2SK2141
2
Test Circuit 1: Avalanche Capability
Test Circuit 2: Switching Time
Test Circuit 3: Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
R
DS(on)
0.8
1.1
V
GS
= 10 V, I
D
= 3.0 A
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
y
fs
2.0
S
V
DS
= 10 V, I
D
= 3.0 A
Drain Leakage Current
I
DSS
100
A
V
DS
= 600V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
100
nA
V
GS
=
30 V, V
DS
= 0
Input Capacitance
C
iss
1150
pF
V
DS
= 10 V
Output Capacitance
C
oss
260
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
60
pF
f = 1 MHz
Turn-On Delay Time
t
d(on)
15
ns
V
GS
= 10 V
Rise Time
t
r
15
ns
V
DD
= 150 V
Turn-Off Delay Time
t
d(off)
75
ns
I
D
= 3.0 A, R
G
= 10
Fall Time
t
f
13
ns
R
L
= 37.5
Total Gate Charge
Q
G
40
nC
V
GS
= 10 V
Gate to Source Charge
Q
GS
6.0
nC
I
D
= 6.0 A
Gate to Drain Charge
Q
GD
20
nC
V
DD
= 480 V
Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 6.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
370
ns
I
F
= 6.0 A
Reverse Recovery Charge
Q
rr
1.5
C
di/dt = 50 A/
s
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave
Form
I
D
Wave
Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d(on)
t
r
t
d (off)
t
f
2SK2141
3
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
T
C
- Case Temperature - C
dT - Percentage of Rated Power - %
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
4
16
8
12
2
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
T
C
- Case Temperature - C
P
T
- Total Power Dissipation - W
80
0
40
60
20
60
40
80
100
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
10
100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
5.0
10
1.0
6
12
8
4
0
Pulsed
1.0
T
C
= 25 C
Single Pulse
R
DS (on)
Limited
(at V
GS
= 20 V)
0
100 s
1 ms
10 ms
PW = 10 s
Power Dissipation Limited
I
D (pulse)
200 ms
10
20
12 V
10 V
8 V
V
GS
= 6 V
50
V
DS
= 10 V
Pulsed
T
ch
= 125 C
75 C
25 C
25 C
I
D (DC)
2SK2141
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th (t)
- Transient Thermal Resistance - C/W
1 000
100
10
1.0
0.1
0.01
0.001
10
100
1 m
10 m
100 m
1
10
100
1 000
T
C
= 25 C
Single Pulse
R
th (ch-a)
= 62.5 C/W
R
th (ch-c)
= 3.57 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0
10
I
D
- Drain Current - A
yfs
- Forward Transfer Admittance - S
8
20
16
2.0
V
GS
- Gate to Source Voltage - V
R
DS (on)
- Drain to Source On-State Resistance -
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
GS (off)
- Gate to Source Cutoff Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
10
100
0.8
I
D
- Drain Current - A
R
DS (on)
- Drain to Source On-State Resistance -
I
D
= 6.0 A
3.0 A
1.2 A
50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
0
10
0.1
1.0
1.0
0
0.4
2.0
0
0.1
V
DS
= 10 V
Pulsed
V
DS
= 10 V
I
D
= 1 mA
4
12
Pulsed
1.2
1.6
V
GS
= 10 V
20 V
Pulsed
0
T
ch
= 25 C
25 C
75 C
125 C
2SK2141
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Q
g
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
20
40
60
80
800
600
400
200
T
ch
- Channel Temperature - C
R
DS (on)
- Drain to Source On-State Resistance -
50
0
50
100
150
3.0
2.0
1.0
0
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1.0
10
100
800
t
rr
- Reverse Recovery Time - ns
600
0.1
400
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
16
14
12
10
8
6
4
2
0
V
DD
= 450 V
300 V
120 V
V
GS
V
DS
0
di/dt = 50 A/ s
V
GS
= 10 V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
1.5
50
1.0
0.5
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10
100
1 000
10 000
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
1 000
100
10
1.0
T
C
= 25 C
Single Pulse
C
iss
C
oss
C
rss
1.0
10
100
1 000
I
D
- Drain Current - A
t
d (on)
, t
r
, t
d (off)
, t
f
- Switching Time - ns
100
10
1.0
SWITCHING CHARACTERISTICS
t
r
t
f
V
GS
= 10 V
Pulsed
I
D
= 6 A
3 A
10
1.0
0.1
0.01
Pulsed
V
GS
= 0 V
V
GS
= 10 V
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
t
d (on)
t
d (off)
I
D
= I
D (DC)
200
Diode Forward Current - A
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