ChipFind - документация

Электронный компонент: 10E1

Скачать:  PDF   ZIP
OUTLINE DRAWING


Maximum Ratings
Approx Net Weight:0.33g
Rating
Symbol
10E1 Unit
Repetitive Peak Reverse Voltage
V
RRM
100 V
Non-repetitive Peak Reverse Voltage
V
RSM
250 V
Average Rectified Output Current
I
O
1.0 Ta=70
C
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
1.57 A
Surge Forward Current
I
FSM
50
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range
T
jw
- 40 to + 150
C
Storage Temperature Range
T
stg
- 40 to + 150
C

Electrical
Thermal Characteristics
Characteristics
Symbol Conditions Min.
Typ.
Max.
Unit
Peak Reverse Current
I
RM
Tj= 25
C, V
RM
= V
RRM
- - 50
A
Peak Forward Voltage
V
FM
Tj= 25
C, I
FM
= 1.0A
- - 0.9
V
Thermal Resistance
Rth(j-a) Junction to Ambient
-
-
91
C/W















DIODE
Type :
:
:
:
10E1
10E1
10E1
10E1
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 52mm Inside Tape Spacing Package Available
10E1 OUTLINE DRAWING (Dmensions in mm)