FRD
Type
C16P40FR
C16P40FR
C16P40FR
C16P40FR
OUTLINE DRAWING
/ Maximum Ratings
Approx Net Weight:5.55g
Rating
Symbol
C16P40FR
Unit
Repetitive Peak Reverse Voltage
V
RRM
400
V
Non-repetitive Peak Reverse Voltage
V
RSM
440
V
Average Rectified Output Current
I
O
16
Tc=109
50 Hz
Full Sine Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
18
A
Surge Forward Current
I
FSM
120
50 Hz , 1,
Full Sine Wave,1cycle,Non-repetitive
A
Operating JunctionTemperature Range
Tjw
- 40 + 150
Storage Temperature Range
Tstg
- 40 + 150
Mounting torque
0.5
Recommended value
Nm
/ Electrical Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max. Unit
Peak Reverse Current
I
RM
Tj=25,V
RM
=V
RRM
per Arm
-
-
30
A
Peak Forward Voltage
V
FM
Tj=25, I
FM
=8A per Arm
-
-
1.25
V
Reverse Recovery Time
trr
I
FM
= 8
A,
-di/dt= 50 A/s, Ta= 25
-
-
45
ns
Thermal Resistance
Rth(j-c)
Junction to Case
-
-
2
/W
(F R D)
Construction: Diffusion-type Silicon Diode
Application : High Frequency Rectification
FORWARD CURRENT VS. VOLTAGE
C16P40FR (per Arm)
0
0.4
0.8
1.2
1.6
2.0
2.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0.5
1
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT (A)
10ms Sine Wave Single Pulse
Tj=25C
Tj=150C
AVERAGE FORWARD POWER DISSIPATION
0
4
8
12
16
AVERAGE FORWARD CURRENT (A)
0
4
8
12
16
20
AVERAGE FORWARD POWER DISSIPATION (W)
C16P40FR (Total)
0
180
CONDUCTION ANGLE
SINE WAVE
RECT 180
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
-
C16P40FR (Total)
0
25
50
75
100
125
150
CASE TEMPERATURE (C)
0
4
8
12
16
20
AVERAGE FORWARD CURRENT (A)
0
180
CONDUCTION ANGLE
SINE WAVE
RECT 180
SURGE CURRENT RATINGS
C16P40FR
f=50Hz,Sine Wave,Non-Repetitive,No Load
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
0
20
40
60
80
100
120
140
SURGE FORWARD CURRENT (A)
0.02s
IFSM
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