SBD
Type
ECQ10A04
ECQ10A04
ECQ10A04
ECQ10A04
OUTLINE DRAWING
/ Maximum Ratings
Approx Net Weight:0.35g
Rating
Symbol
ECQ10A04
Unit
Repetitive Peak Reverse Voltage
V
RRM
40
V
10.0 Tc=105
50 Hz,
Full Sine Wave ResistiveLoad
Average Rectified Output Current
I
O
2.0 Ta=23
P.C.Board mounted*
A
RMS Forward Current
I
F(RMS)
11.1
A
Surge Forward Current
I
FSM
100
50 Hz , 1,
Full Sine Wave,1cycle,Non-repetitive
A
Operating JunctionTemperature Range
Tjw
- 40 + 150
Storage Temperature Range
Tstg
- 40 + 150
/ Electrical Thermal Characteristics
Characteristics
Symbol
Conditions
Min Typ Max. Unit
Peak Reverse Current
I
RM
Tj=25,V
RM
=V
RRM
per Diode
-
-
3
mA
Peak Forward Voltage
V
FM
Tj=25,I
FM
= 5A per Diode
-
-
0.55
V
Rth(j-c)
Junction to Case
-
-
4
Thermal Resistance
Rth(j-a)
Junction to Ambent
(with P.C.Board mounted*)
80
/W
*Print land 20x20
(SBD)
Construction:
Schottky barrier Diode
Application : High Frequency Rectification
1
1
1
1
FORWARD CURRENT VS. VOLTAGE
ECQ10A04 (per Arm)
0
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
0.5
1
2
5
10
20
IN
STA
N
T
A
N
E
O
U
S FOR
W
AR
D
C
U
R
R
EN
T (
A
)
Tj=25C
Tj=150C
AVERAGE FORWARD POWER DISSIPATION
0
2
4
6
8
10
12
AVERAGE FORWARD CURRENT (A)
0
1
2
3
4
5
6
7
8
AVER
AG
E
FOR
W
AR
D
POWE
R
D
I
S
S
IP
ATI
O
N
(
W
)
ECQ10A04 (Total)
0
180
CONDUCTION ANGLE
SINE WAVE
RECT 180
FORWARD CURRENT VS. VOLTAGE
ECQ10A04 (per Arm)
0
0.2
0.4
0.6
0.8
1.0
1.2
INSTANTANEOUS FORWARD VOLTAGE (V)
0.5
1
2
5
10
20
IN
STA
N
T
A
N
E
O
U
S FOR
W
AR
D
C
U
R
R
EN
T (
A
)
Tj=25C
Tj=150C
AVERAGE FORWARD POWER DISSIPATION
0
2
4
6
8
10
12
AVERAGE FORWARD CURRENT (A)
0
1
2
3
4
5
6
7
8
AVER
AG
E
FOR
W
AR
D
POWE
R
D
I
S
S
IP
ATI
O
N
(
W
)
ECQ10A04 (Total)
0
180
CONDUCTION ANGLE
SINE WAVE
RECT 180
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
-
ECQ10A04 (per Arm)
Tj= 150 C
0
10
20
30
40
PEAK REVERSE VOLTAGE (V)
50
100
200
PE
AK R
EVE
R
SE C
U
R
R
E
N
T
(
m
A
)
AVERAGE REVERSE POWER DISSIPATION
ECQ10A04 (Total)
0
10
20
30
40
REVERSE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
A
VER
A
G
E R
E
VE
R
S
E
POW
E
R
D
I
S
S
IP
ATI
O
N
(
W
)
RECT 180
SINE WAVE
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
-
ECQ10A04 (per Arm)
Tj= 150 C
0
10
20
30
40
PEAK REVERSE VOLTAGE (V)
50
100
200
PE
AK R
EVE
R
SE C
U
R
R
E
N
T
(
m
A
)
AVERAGE REVERSE POWER DISSIPATION
ECQ10A04 (Total)
0
10
20
30
40
REVERSE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
A
VER
A
G
E R
E
VE
R
S
E
POW
E
R
D
I
S
S
IP
ATI
O
N
(
W
)
RECT 180
SINE WAVE
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
-
ECQ10A04 (Total)
V
RM
=40V
0
25
50
75
100
125
150
CASE TEMPERATURE (C)
0
2
4
6
8
10
12
A
V
E
R
A
G
E
F
O
R
W
A
R
D
CURR
E
N
T
(
A
)
0
180
CONDUCTION ANGLE
SINE WAVE.
RECT 180.
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
-
ECQ10A04 (Total)
V
RM
=40V,P.C Board mounted
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
0
0.5
1.0
1.5
2.0
2.5
3.0
AV
ER
AGE FO
R
W
A
R
D
C
U
R
R
EN
T (
A
)
0
180
CONDUCTION ANGLE
SINE WAVE.
RECT 180.
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
-
ECQ10A04 (Total)
V
RM
=40V
0
25
50
75
100
125
150
CASE TEMPERATURE (C)
0
2
4
6
8
10
12
A
V
E
R
A
G
E
F
O
R
W
A
R
D
CURR
E
N
T
(
A
)
0
180
CONDUCTION ANGLE
SINE WAVE.
RECT 180.
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
-
ECQ10A04 (Total)
V
RM
=40V,P.C Board mounted
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (C)
0
0.5
1.0
1.5
2.0
2.5
3.0
AV
ER
AGE FO
R
W
A
R
D
C
U
R
R
EN
T (
A
)
0
180
CONDUCTION ANGLE
SINE WAVE.
RECT 180.
SURGE CURRENT RATINGS
ECQ10A04
f=50Hz,Sine Wave,Non-Repetitive,No Load
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
0
20
40
60
80
100
120
S
U
R
G
E
F
O
RW
A
R
D
CUR
RE
N
T
(
A
)
0.02s
IFSM
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
ECQ10A04 (per Arm)
Tj=25C,Vm=20mV
RMS
,f=100kHz,Typical Value
0.5
1
2
5
10
20
50
REVERSE VOLTAGE (V)
100
200
500
1000
J
U
NCT
I
O
N CA
P
A
CI
T
A
NCE
(
p
F
)
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