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Электронный компонент: P2HM1102H

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MOSFET
MODULE
MODULE
MODULE
MODULE
Dual 110A /500V
Dual 110A /500V
Dual 110A /500V
Dual 110A /500V
P2HM1102H
P2HM1102H
P2HM1102H
P2HM1102H












MAXMUM RATINGS
Ratings Symbol P2HM1102H
Unit
Drain-Source Voltage (V
GS
=0V) V
DSS
250 V
Gate - Source Voltage
V
GSS
+/ - 10
V
Duty=50% 110
(Tc=25
C)
Continuous Drain Current
D.C.
I
D
80 (Tc=25
C)
A
Pulsed Drain Current
I
DM
220
Tc=25
C) A
Total Power Dissipation
P
D
420
Tc=25
C) W
Operating Junction Temperature Range
T
jw
-40 to +150
C
Storage Temperature Range
T
stg
-40 to +125
C
Isolation Voltage Terminals to Base AC, 1 min.)
V
ISO
2000
V
Module Base to Heatsink
3.0
Mounting Torque
Bus Bar to Main Terminals
F
TOR
2.0
N
m
ELECTRICAL CHARACTERISTICS
(@Tc=25
C unless otherwise noted)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
V
DS
=V
DSS
,V
GS
=0V -
-
1.0
Zero Gate Voltage Drain Current
I
DSS
T
j
=125
C, V
DS
=V
DSS
,V
GS
=0V
- -
4.0
mA
Gate-Source Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=5mA 2.0
3.3
4.0
V
Gate-Source Leakage Current
I
GSS
V
GS
=+/- 10V,V
DS
=0V -
-
0.3
A
Static Drain-Source On-Resistance
r
DS(on)
V
GS
=10V, I
D
=55A -
29
33
m-ohm
Drain-Source On-Voltage
V
DS(on)
V
GS
=10V, I
D
=55A -
2.2
2.4
V
Forward Transconductance
g
fs
V
DS
=15V, I
D
=55A -
55
-
S
Input Capacitance
C
ies
-
13
-
nF
Output Capacitance
C
oss
-
2.3
-
nF
Reverse Transfer Capacitance
C
rss
V
DS
=25V,V
GS
=0V,f=1MHz
- 0.36 -
nF
Turn-On Delay Time
t
d(on)
-
140
-
Rise Time
t
r
-
200
-
Turn-Off Delay Time
t
d(off)
-
230
-
Fall Time
t
f
V
DD
= 1/2V
DSS
I
D
=55A
V
GS
= -5V, +10V
R
G
= 5 ohm
- 80 -
ns
FREE WHEELING DIODES RATINGS & CHARACTERISTICS
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Continuous Source Current
I
S
D.C.
-
-
80
A
Pulsed Source Current
I
SM
- -
-
220
A
Diode Forward Voltage
V
SD
I
S
=110A -
-
1.4
V
Reverse Recovery Time
t
rr
-
75
-
ns
Reverse Recovery
Q
r
I
S
=110A, -dis/dt=100A/
s
- 0.15 -
C
THERMAL CHARACTERISTICS
Characteristic Symbol Test
Condition Min.
Typ.
Max.
Unit
MOS FET
-
-
0.30
Thermal Resistance, Junction to Case
R
th(j-c)
Diode -
-
2.0
Thermal Resistance, Case to Heatsink
R
th(c-f)
Mounting surface flat, smooth, and greased
-
-
0.1
C/W
Dimension(mm)
FEATURES
* Dual MOS FETs Separated Circuit
* Prevented Body Diodes of MOSFETs by
SBDs, and Ultra Fast Recovery Diodes
Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Approximate Weight : 220g
OUTLINE DRAWING
Circuit
108.0
P2HM1102H
108.0
240
200
160
120
80
40
0
0
2
4
6
8
10
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25 250s Pulse Test
V
GS
=10V
8V
7V
6V
5V
Fig. 1 Typical Output Characteristics
30
24
18
12
6
0
1
2
5
10
20
50
100
CAP
A
CIT
ANCE C (nF)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
V
GS
=0V f=1MHz
C
oss
C
iss
Fig. 4 Typical Capacitance
Fig. 4
Vs. Drain-Source Voltage
1000
500
100
200
50
20
10
2
5
10
20
50
200
100
SWITCHING
TIME t (ns)
R
G
=5 V
DD
=48V T
C
=25 80s Pulse Test
DRAIN CURRENT I
D
(A)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 7 Typical Switching Time
Fig. 7
Vs. Drain Current
500
50
200
100
20
10
5
1
2
0.5
0.5
2
5
10
20
50
100
500
200
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25 T
j
=150MAX Single Pulse
10s
1ms
10ms
DC
100s
Operation in this area
is limited by R
DS
(on)
Fig. 10 Maximum Safe Operating Area
8
6
4
2
0
0
4
8
12
16
DRAIN
T
O
SOURCE ON
V
O
L
T
A
G
E
V
DS
(on)(V)
GATE TO SOURCE VOLTAGE V
GS
(V)
T
C
=25 250s Pulse Test
55A
25A
I
D
=110A
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Vs. Gate-Source Voltage
16
12
8
4
0
0
100
200
300
400
500
600
GA
TE T
O

SOURCE V
O
L
T
A
G
E
V
GS
(V)
TOTAL GATE CHRAGE Q
g
(nC)
I
D
=80A
V
DD
= 48V
125V
200V
Fig. 5 Typical Gate Charge
Fig. 5
Vs. Gate-Source Voltage
1000
500
100
200
50
20
10
2
5
10
20
50
200
100
SWITCHING
TIME t (ns)
R
G
=5 V
DD
=48V T
C
=25 80s Pulse Test
DRAIN CURRENT I
D
(A)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
Per Unit Base
R
th(j-c)
=0.30/W
1 Shot Pulse
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
12
10
8
6
4
2
0
-40
0
40
80
120
160
DRAIN
T
O
SOURCE ON
V
O
L
T
A
G
E
V
DS
(on)(V)
JUNCTION TEMPERATURE T
j
(
)
V
GS
=10V 250s Pulse Test
I
D
=110A
55A
25A
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Vs. Junction Temperature
5
2
0.5
1
0.2
0.1
0.05
2
5
10
20
50
100
200
SWITCHING
TIME t (
s)
I
D
=55A V
DD
=48V T
C
=25 80s Pulse Test
SERIES GATE IMPEDANCE R
G
(
)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 6 Typical Switching Time
Fig. 6
Vs. Series Gate impedance
200
100
20
50
10
5
0
100
200
300
400
REVERSE RECO
VER
Y
TIME t
rr
(ns)
REVERSE CURRENT I
R
(A)
I
S
=110A I
S
=80A T
j
=125
-dis/dt (A/
s)
t
rr
I
R
Fig. 9 Typical Reverse Recovery Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
Per Unit Base
R
th(j-c)
=2.0/W
1 Shot Pulse
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)