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Электронный компонент: P2HM755HA

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MOSFET
MOSFET
MOSFET
MOSFET
75A
75A
75A
75A 500V
500V
500V
500V
PDM755HA
P2HM755HA
Grade
Rating
Symbol
PDM755HA / P2HM755HA

Unit
500
Drain-Source Voltage
V
DSS
V
GS
=0V
V
Gate-Source Voltage
V
GSS
20
V
Duty=50%
75c=25
Continuous Drain Current
D.C.
I
D
53c=25
A
Pulsed Drain Current
I
DM
150c=25
A
Total Power Dissipation
P
D
500c=25
W
Operating Junction Temperature Range
T
jw
-40+150
Storage Temperature Range
T
stg
-40+125
2000
RMS Isolation Voltage
V
iso
- ,AC1
Terminals to Base, AC 1 min .
V
3.0 Module Base to Heat sink
Mounting Torque
F
tor
2.0 Bus bar to Main Terminals
Nm
PDM755HA
PDM755HA
PDM755HA
PDM755HA
P2HM755H
P2HM755H
P2HM755H
P2HM755HA
A
A
A
Approximate Weight :220g
Approximate Weight :220g
Maximum Ratings
108.0
108.0
329
Electrical CharacteristicsT
C
25 unless otherwise noted
Characteristic
Symbol
Condition
Maximum Value

Unit
Min.
Typ.
Max.

Zero Gate Voltage Drain Current
I
DSS
V
DS
V
DSS
, V
GS
0V
1
mA

Gate-Source Threshold Voltage
V
GS
th
V
DS
V
GS
, I
D
5mA
2
2.9
4
V

Gate-Source Leakage Current
I
GSS
V
GS
20V, V
DS
0V
10
A
MOSFET
Static Drain-Source On-Resistance
r
DS
on
V
GS
10V, I
D
35A
55
65
m

Drain-Source On-Voltage
V
DS
on
V
GS
10V, I
D
35A
2.4
2.9
V

Forward Transconductance
g
fg
V
DS
15V, I
D
35A
75
S
Characteristic
Symbol
Condition
Maximum Value

Unit
Min.
Typ.
Max.

Continuous Source Current
I
S
D. C.
53
A

Pulsed Source Current
I
SM
150
A

Diode Forward Voltage
V
SD
I
S
75A
1.8
V

Reverse Recovery Time
t
rr
I
S
75A
-di
S
/dt100A/s
70
ns

Reverse Recovery Charge
Q
r
0.15
C
T
j
125, V
DS
V
DSS
, V
GS
0V
4

Input Capacitance
C
iss
V
GS
0V
V
DS
25V
f1MHz
16
nF

Output Capacitance
C
oss
1.8
nF

Reverse Transfer Capacitance
C
rss
0.4
nF

Rise Time
t
r

Turn-On Delay Time
t
d
on
V
DD
1/2V
DSS
I
D
35A
V
GS
-5V, 10V
R
G
5
180
ns
70
ns

Turn-Off Delay Time
t
d
off
390
ns

Fall Time
t
f
50
ns
Characteristic
Symbol
Condition
Maximum Value

Unit
Min.
Typ.
Max.
-
Thermal Resistance, Junction to Case
R
th
j-c
MOSFET
0.25
/W
-
Thermal Resistance, Case to Heatsink
R
th
c-f

Mounting surface flat, smooth, and greased
0.1
Diode
2.0
Source-Drain Diode Ratings and CharacteristicsT
C
25 unless otherwise noted
Thermal Characteristics
330
150
120
90
60
30
0
0
2
4
6
8
10
12
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25 250s Pulse Test
8V
6V
5V
V
GS
=10V
Fig. 1 Typical Output Characteristics
24
20
16
12
8
4
0
1
2
5
10
20
50
100
CAP
A
CIT
ANCE C (nF)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
V
GS
=0V f=1MHz
C
iss
C
oss
Fig. 4 Typical Capacitance
Fig. 4
Vs. Drain-Source Voltage
1000
500
100
200
50
20
10
2
5
10
20
50
200
100
SWITCHING
TIME t (ns)
R
G
=5 V
DD
=250V T
C
=25 80s Pulse Test
DRAIN CURRENT I
D
(A)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 7 Typical Switching Time
Fig. 7
Vs. Drain Current
200
50
100
20
10
5
0.5
1
2
0.2
1
2
5
10
20
50
100
500
200
1000
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
T
C
=25 T
j
=150MAX Single Pulse
10s
1ms
10ms
DC
100s
Operation in this area
is limited by R
DS
(on)
Fig. 10 Maximum Safe Operating Area
8
6
4
2
0
0
4
8
12
16
DRAIN
T
O
SOURCE ON
V
O
L
T
A
G
E
V
DS
(on)(V)
GATE TO SOURCE VOLTAGE V
GS
(V)
T
C
=25 250s Pulse Test
I
D
=75A
35A
20A
Fig. 2 Typical Drain-Source On-Voltage
Fig. 2
Vs. Gate-Source Voltage
16
12
8
4
0
0
200
400
600
800
GA
TE T
O

SOURCE V
O
L
T
A
G
E
V
GS
(V)
TOTAL GATE CHRAGE Q
g
(nC)
I
D
=50A
100V
250V
400V
V
DD
=
Fig. 5 Typical Gate Charge
Fig. 5
Vs. Gate-Source Voltage
180
150
120
90
60
30
0
0
0.4
0.8
1.2
1.6
2.0
2.4
SOURCE CURRENT I
S
(A)
SOURCE TO DRAIN VOLTAGE V
SD
(V)
250s Pulse Test
T
j
=125
T
j
=25
Fig. 8 Typical Source-Drain Diode Forward
Fig. 8
Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
Per Unit Base
R
th(j-c)
=0.25/W
1 Shot Pulse
Fig. 11-1
Normalized Transient Thermal
impedance(MOSFET)
16
12
8
4
0
-40
0
40
80
120
160
DRAIN
T
O
SOURCE ON
V
O
L
T
A
GE
V
DS
(on)(V)
JUNCTION TEMPERATURE T
j
(
)
V
GS
=10V 250s Pulse Test
35A
20A
I
D
=75A
Fig. 3 Typical Drain-Source On Voltage
Fig. 3
Vs. Junction Temperature
5
2
0.5
1
0.2
0.1
0.05
2
5
10
20
50
100
200
SWITCHING
TIME t (
s)
I
D
=35A V
DD
=250V T
C
=25 80s Pulse Test
SERIES GATE IMPEDANCE R
G
(
)
t
d
(off)
t
d
(on)
t
r
t
f
Fig. 6 Typical Switching Time
Fig. 6
Vs. Series Gate impedance
500
200
50
100
20
10
5
0
100
200
300
400
500
600
REVERSE RECO
VER
Y
TIME t
rr
(ns)
REVERSE CURRENT I
R
(A)
-dis/dt (A/
s)
t
rr
I
R
I
S
=75A I
S
=35A T
j
=125
Fig. 9 Typical Reverse Recovery Characteristics
0.01
2
1
0.5
0.2
0.1
0.05
0.02
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
NORMALIZED TRANSIENT
THERMAL IMPED
ANCE
[r
th(j-c)
/ R
th(j-c)
]
PULSE DURATION t (s)
Per Unit Base
R
th(j-c)
=2.0/W
1 Shot Pulse
Fig. 11-2
Normalized Transient Thermal
impedance(DIODE)