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Электронный компонент: PAH15016

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195
THYRISTOR 150A Avg 12001600 Volts
PDT
PDT
PDH
PDH
PCH
15012
PCH
15016
PAT
PAT
PAH
PAH
OUTLINE DRAWING
Dimensionmm
Maximum Ratings
Parameter
Symbol
Grade

Unit

Repetitive Peak Reverse Voltage
V
RRM
1200
V

Non Repetitive Peak Reverse Voltage
V
RSM
1300
V
PDT/PDH/PCH/PAT/PAH15012
Parameter
Symbol
Conditions
Max. Rated Value

Unit

Average Rectified Output Current
I
0AV
180
T
c
73
Half Sine Wave
150
A

RMS On-State Current
I
T
RMS
235
A

I Squared t
I
2
t
10ms
51200
A
2
s

Operating Junction Temperature Range
T
jw
-40125

Storage Temperature Range
T
stg
-40125

Mounting Torque
F

Greased
2.53.5
Nm
9.010.0
Nm

Mounting

Terminal

Surge On-State Current
I
TSM
50Hz
Half Sine Wave, 1Pulse, Non-Repetitive
3200
A
M6
M8

Repetitive Peak Off-State Voltage
V
DRM
1200
V

Non Repetitive Peak Off-State Voltage
V
DSM
1300
V

Peak Gate Reverse Voltage
V
RGM
5
V

Peak Gate Voltage
V
GM
10
V

Peak Gate Current
I
GM
2
A

Average Gate Power
P
G
AV
1
W

Peak Gate Power
P
GM
5
W

Critical Rate of Rise of Turned-On Current
di/dt
V
D
=2/3V
DRM
I
TM
=2I
O
T
j
125
I
G
=300mAdi
G
/dt=0.2A/s
100
A/s

Isolation Voltage
V
iso
-AC
Terminal to Base, ACmin.
2500
V
1600
1700
PDT/PDH/PCH/PAT/PAH15016
1600
1700
CIRCUIT
1
2
3
4
G1
K1
K2 G2
PDT
1
2
3
4
G1
K1
PCH
1
2
3
4
G1
K1
K2 G2
PAT
PAH
1
2
3
4
G1
K1
1
2
3
4
G1
K1
PDH
Value Per 1 Arm.
196









Parameter
Symbol
Conditions
Maximum Value

Unit

Peak Off-State Current
I
DM
T
j
=125V
DM
=V
DRM
mA
Electrical Characteristics

Peak On-State Voltage
V
TM
T
j
=25I
TM
=450A
V

Gate Current to Trigger
I
GT
V
D
=6VI
T
=1A
mA
mA
mA

Gate Voltage to Trigger
V
GT
V
D
=6VI
T
=1A
V
V
V

Gate Non-Trigger Voltage
V
GD
T
j
=125V
D
=2/3V
DRM
0.25
V

Turn-Off Time
t
q
T
j
=125I
TM
=I
O
V
D
=2/3V
DRM
dv/dt=20V/s
V
R
=100V
-di/dt=20A/s
s

Holding Current
I
H
T
j
=25
mA

Thermal Resistance
R
th
j-c
-
Junction to Case
/W
...480g
Value Per 1 Arm.
Approximate Weight
T
j
=-40
T
j
=
25
T
j
= 125
T
j
=-40
T
j
=
25
T
j
= 125
Min.
Typ.
100
80
50
Max.
1.38
300
150
80
5
3
2
0.25

Critical Rate of Rise of Off-State Voltage
dv/dt
T
j
=125V
D
=2/3V
DRM
500
V/s

Latching Current
I
L
T
j
=25
mA
120

Turn-On Time
t
gt
T
j
=25V
D
=2/3V
DRM
I
G
=300mAdi
G
/dt=0.2A/s
s
6

Delay Time
t
d
s
2

Rise Time
t
r
s
4

Thermal Resistance
R
th
c-f
-
Case to Fin, Greased
/W
0.1

Peak Reverse Current
I
RM
T
j
=125V
RM
=V
RRM
mA
50
197
198