ChipFind - документация

Электронный компонент: PHT25016

Скачать:  PDF   ZIP
THYRISTOR MODULE

Maximum Ratings
Approx Net Weight:250g
Grade
Parameter
Parameter
Parameter
Parameter
Symbol
PHT25012 PHT25016
Unit
Repetitive Peak Off-State Voltage
V
DRM
1200
1600
Non Repetitive Peak Off-State Voltage
V
DSM
1300
1700
V
Repetitive Peak Reverse Voltage
V
RRM
1200
1600
Non Repetitive Peak Reverse Voltage
V
RSM
1300
1700
V
Parameter
Parameter
Parameter
Parameter
Conditions
Conditions
Conditions
Conditions
Max Rated
Max Rated
Max Rated
Max Rated
Value
Value
Value
Value
Unit
Average Rectified Output Current
I
O(AV)
50Hz Half Sine Wave condition
Tc=65
C
250 A
RMS On-State Current
I
T(RMS)
390
A
Surge On-State Current
I
TSM
50 Hz Half Sine Wave, 1Pulse
Non-Repetitive
4000 A
I Squared t
I
2
t
2msec to 10msec
80000
A
2
s
Critical Rate of Turned-On Current
di/dt
V
D
=2/3V
DRM
, I
TM
=2
I
O
, Tj=125
C
I
G
=300mA, di
G
/dt=0.2A/
s
100
A/
s
Peak Gate Power
P
GM
5
W
Average Gate Power
P
G(AV)
1
W
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
10
V
Peak Gate Reverse Voltage
V
RGM
5
V
Operating JunctionTemperature Range
Tjw
-40 to +125
C
Storage Temperature Range
Tstg
-40 to +125
C
Isoration Voltage
Viso
Base Plate to Terminals, AC1min
2500 V
Case mounting
M5 Screw
2.4 to 2.8
Mounting torque
Terminals
Ftor
M5 Screw
2.4 to 2.8
N
m
FEATURES
* Isolated Base
* Single Thyristor Module
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PHT25012 PHT25016
PHT25012 PHT25016
PHT25012 PHT25016
PHT25012 PHT25016
OUTLINE DRAWING
250A / 1200V to 1600V
Electrical
Thermal Characteristics
Maximum Value.
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Unit
Peak Off-State Current
I
DM
V
DM
= V
DRM,
Tj= 125
C
80
mA
Peak Reverse Current
I
RM
V
RM
= V
RRM,
Tj= 125
C
80
mA
Peak Forward Voltage
V
TM
I
TM
= 800A, Tj=25
C
1.38
V
Tj=-40
C
300
Tj=25
C
150
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
Tj=125
C
80
mA
Tj=-40
C
5
Tj=25
C
3
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
Tj=125
C
2
V
Gate Non-Trigger Voltage
V
GD
V
D
=2/3V
DRM
Tj=125
C
0.25 V
Critical Rate of Rise of Off-State
Voltage
dv/dt V
D
=2/3V
DRM
Tj=125
C
500 V/
s
Turn-Off Time
tq
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/
s, V
R
=100V
-di/dt=20A/
s, Tj=125
C
200
s
Turn-On Time
tgt
6
s
Delay Time
td
2
s
Rise Time
tr
V
D
=2/3V
DRM
Tj=125
C
I
G
=300mA, di
G
/dt=0.2A/
s
4
s
Latching Current
I
L
Tj=25
C
150 mA
Holding Current
I
H
Tj=25
C
100
Rth(j-c) Junction to Case
0.18
Thermal Resistance
Rth(c-f)
Base Plate to Heat Sink
with Thermal Compound
0.1
C/W























PHT2501x OUTLINE DRAWING (Dimensions in mm)
The striking distance between the anode and the
cathode of this module is 5mm filling with UL1557, b
ut when used by the system of 400VAC, take an e
nough striking distance and wire.