THYRISTOR MODULE
Maximum Ratings
Approx Net Weight:250g
Grade
Parameter
Parameter
Parameter
Parameter
Symbol
PHT2508
Unit
Repetitive Peak Off-State Voltage
V
DRM
800
Non Repetitive Peak Off-State Voltage
V
DSM
900
V
Repetitive Peak Reverse Voltage
V
RRM
800
Non Repetitive Peak Reverse Voltage
V
RSM
900
V
Parameter
Parameter
Parameter
Parameter
Conditions
Conditions
Conditions
Conditions
Max Rated
Max Rated
Max Rated
Max Rated
Value
Value
Value
Value
Unit
Average Rectified Output Current
I
O(AV)
50Hz Half Sine Wave condition
Tc=65C
250 A
RMS On-State Current
I
T(RMS)
390
A
Surge On-State Current
I
TSM
50 Hz Half Sine Wave, 1Pulse
Non-Repetitive
4000 A
I Squared t
I
2
t
2msec to 10msec
80000
A
2
s
Critical Rate of Turned-On Current
di/dt
V
D
=2/3V
DRM
, I
TM
=2
I
O
, Tj=125C
I
G
=300mA, di
G
/dt=0.2A/s
100
A/s
Peak Gate Power
P
GM
5
W
Average Gate Power
P
G(AV)
1
W
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
10
V
Peak Gate Reverse Voltage
V
RGM
5
V
Operating JunctionTemperature Range
Tjw
-40 to +125 C
Storage Temperature Range
Tstg
-40 to +125 C
Isoration Voltage
Viso
Base Plate to Terminals, AC1min
2000 V
Case mounting
M5 Screw
2.4 to 2.8
Mounting torque
Terminals
Ftor
M5 Screw
2.4 to 2.8
N
m
FEATURES
* Isolated Base
* Single Thyristor Module
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
P H T 2 5 0 8
P H T 2 5 0 8
P H T 2 5 0 8
P H T 2 5 0 8
OUTLINE DRAWING
250A / 800V
Electrical Thermal Characteristics
Maximum Value.
Characteristics
Symbol
Test Conditions
Min. Typ. Max.
Unit
Peak Off-State Current
I
DM
V
DM
= V
DRM,
Tj= 125C
80
mA
Peak Reverse Current
I
RM
V
RM
= V
RRM,
Tj= 125C
80
mA
Peak Forward Voltage
V
TM
I
TM
= 800A, Tj=25C
1.38
V
Tj=-40C
300
Tj=25C
150
Gate Current to Trigger
I
GT
V
D
=6V,I
T
=1A
Tj=125C
80
mA
Tj=-40C
5
Tj=25C
3
Gate Voltage to Trigger
V
GT
V
D
=6V,I
T
=1A
Tj=125C
2
V
Gate Non-Trigger Voltage
V
GD
V
D
=2/3V
DRM
Tj=125C
0.25 V
Critical Rate of Rise of Off-State
Voltage
dv/dt V
D
=2/3V
DRM
Tj=125C
500 V/s
Turn-Off Time
tq
I
TM
=I
O
,V
D
=2/3V
DRM
dv/dt=20V/s, V
R
=100V
-di/dt=20A/s, Tj=125C
200 s
Turn-On Time
tgt
6
s
Delay Time
td
2
s
Rise Time
tr
V
D
=2/3V
DRM
Tj=125C
I
G
=300mA, di
G
/dt=0.2A/s
4 s
Latching Current
I
L
Tj=25C
150 mA
Holding Current
I
H
Tj=25C
100
Rth(j-c) Junction to Case
0.18
Thermal Resistance
Rth(c-f)
Base Plate to Heat Sink
with Thermal Compound
0.1
C/W
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