TENTATIVE
PIM
MODULE
MODULE
MODULE
MODULE
5
5
5
5.5KW 400V
.5KW 400V
.5KW 400V
.5KW 400V
PVD5
PVD5
PVD5
PVD55555----12
12
12
12
Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber
For 5.5kw 400V Inverter
MAXMUM RATINGS
(Tc=25
C)
Item Symbol
Rated
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
1600
Non-Repetitive Peak Reverse Voltage
V
RSM
1700
V
Average Rectified Out Put Current
I
O(AV)
25
Surge Forward Current
I
FSM
350
A
I Squared t
I
2
t 612
A
2
s
3 Phase
Rectification
Diode
Critical Rate of Fall of Forward Current
-di/dt
200(@ :I
FM
=30A, V
R
=1000V) A/
s
Repetitive Peak Off-State Voltage
V
DRM
1600
Non-Repetitive Peak Off-State Voltage
V
RSM
1700
V
Average Rectified Out-Put Current
I
O(AV)
25
Surge Forward Current
I
TSM
350
A
I Squared t
I
2
t 612
A
2
s
Critical Rate Of Rise Of Turn-On Current
di/dt
100
A/s
Peak Gate Power
P
GM
5
Average Gate Power
P
GM(AV)
1
W
Peak Gate Current
I
GM
2 A
Peak Gate Voltage
V
GM
10
Switch
Thyristor
Peak Gate Reverse Voltage
V
RGM
5
V
Collector-Emitter Voltage
V
CES
1200
Gate-Emitter Voltage
V
GES
+/-
20V
V
DC I
C
25
Collector Current
1
ms
I
CP
50
DC I
F
25
Forward Current
1
ms
I
FM
50
A
Inverter
IGBT
Collector Power Dissipation
P
C
186
W
Collector-Emitter Voltage
V
CES
1200
Gate Emitter Voltage
V
GES
+/-
20V
V
DC I
C
25
Collector Current
1ms I
CP
50
A
Brake
IGBT
Collector Power Dissipation
P
C
186
W
Repetitive Peak Reverse Voltage
V
RRM
1200 V
Forward Current, DC
I
F
15
Snubber
Diode
Surge Forward Current
I
FSM
70
A
Operating Junction Temperature Range
Tjw
-40 to +150
C(notes:+125
C > Can not be biased.)
Storage Temperature Range
Tstg
-40 to +125
C
C
Isolation Voltage(Terminal to Base)
Viso
2500(@AC, 1minute), 3000(@AC, 1second)
V
Isolation Resistance(Terminal to Base, @DC=500V)
Riso
500
M.ohm
Mounting Torque(Module Base to Heatsink)
Ftor
(M4), 1.4
Nm
ELECTRICAL CHARACTERISTICS
(Tc=25
C Unless otherwise noted)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Peak Reverse Current *1
I
R
Tj=150
C, V
RM
=V
RRM
- - 10
mA
3 Phase
Rectification Diode Peak Reverse Voltage *1
V
F
I
F
=25A -
-
1.40
A
Peak OFF-State Current
I
DM
Tj=125
C, V
DM
=V
DRM
- - 50
Peak Reverse Current
I
RM
Tj=125
C, V
RM
=V
RRM
- - 50
mA
Peak On-State Voltage
V
TM
I
T
=25A -
-
1.30
V
Tj=-40
C
- -
200
Tj=25
C
- -
100
Gate Current to Trigger
I
GT
V
D
=6V
I
T
=1A
Tj=125
C
- - 50
mA
Tj=-40
C
- - 40
Tj=25
C
- - 25
Gate Voltage to Trigger
V
GT
V
D
=6V
I
T
=1A
Tj=125
C
- - 20
V
Gate Voltage to Non-Trigger
V
GD
0.25
-
-
V
Switch Thyristor
Critical Rate Of Rise Of Off-State Voltage
dv/dt
Tj=125
C, V
D
=2/3V
DRM
500 - - V/s
Approximate Weight : 400g
TENTATIVE
Turn-Off Time
tq
Tj=125
C, V
D
=2/3V
DRM
V
RM
=100V, dv/dt=20V/s
-di/dt=20A/s
- 100 -
Turn-On Time
tgt
-
6
-
Delay Time
td
-
2
-
Rise Time
tr
Tj=25
C, V
D
=2/3V
DRM
I
G
=200mA
-di
G
/dt=0.2A/s
- 4 -
s
Latching Current
I
L
- 100 -
Switch Thyristor
Holding Current
I
H
- 80 -
mA
Collector-Emitter Out-Off Current
I
CES
V
CE
=1200V,V
GE
=0V -
-
1.0
mA
Gate-Emitter Leakage Current
I
GES
V
GE
=+/- 20V,V
CE
=0V -
-
1.0
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=25A,V
GE
=15V -
2.0
2.7
V
Gate-Emitter Threshold Voltage
V
CE(th)
V
CE
=5V,I
C
=25mA 3.0
-
7.0
V
Input Capacitance
Cies
V
CE
=10V,V
GE
=0V,f=1MHz -
2500
-
pF
Rise Time
tr
-
0.3
0.6
Turn-On Time
ton
-
0.5
1.0
Fall Time
tf
-
0.3
0.5
Switching Time
Turn-Off Time
toff
V
CC
= 600V
R
L
= 24 ohm
R
G
= 91 ohm
V
GE
= +/- 15V
- 0.8 1.5
s
Peak Forward Voltage
V
F
I
F
=25A -
1.9
2.4
V
Inverter
IGBT
Reverse Recovery Time
trr
I
F
=25A,V
GE
=-10V, di/dt=50A/
s
- 0.2 0.3
s
Collector-Emitter Cut-Off Current
I
CES
V
CE
=1200V,V
GE
=0V -
-
1.0
mA
Gate-Emitter Leakage Current
I
GES
V
GE
=+/- 20V,V
CE
=0V -
-
1.0
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=25A,V
GE
=15V -
2.0
3.3
V
Gate-Emitter Threshold Voltage
V
GE(th)
V
CE
=5V,I
C
=25mA 3.0
-
7.0
V
Input Capacitance
Cies
V
CE
=10V,V
GE
=0V,f=1MHz -
2500
-
pF
Rise Time
t
r
-
0.3
0.6
Turn-on Time
t
on
-
0.5
1.0
Fall Time
t
f
-
0.3
0.5
Brake
IGBT
Switching Time
Turn-off Time
t
off
V
CC
= 600V
R
L
= 24 ohm
R
G
= 91 ohm
V
GE
= +/- 15V
- 0.8 1.5
s
Peak Forward Voltage
V
F
I
F
=15A -
-
2.5
V
Snubber
Diode
Reverse Recovery Time
trr I
F
=15A, di/dt=50A/
s
- - 0.3
s
*1: per 1arm
ELECTRICAL CHARACTERISTICS
(Tc=25
C Unless otherwise noted)
25
C
- 5.00 -
75
C
- 0.97 -
Resistance
125
C
- 0.27 -
k. ohm
25
C/50
C
- 3375 -
B-Value
25
C/85
C
- 3420 -
K
Thermister
Thermal Time Constant
-
10
-
s
THERMAL CHARACTERISTICS
Characteristic Test
Condition
Min.
Typ.
Max.
Unit
3 Phase Rectification Diode
-
-
0.75
Switch Thyristor
-
-
0.60
Inverter IGBT
-
-
0.67
Inverter Free Wheeling Diode
-
-
0.70
Thermal Impedance R
th(j-c)
Junction to Case
Brake IGBT
Per :1 arm.
- -
0.67
C/W
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