NJG1103F1
- 1 -
1.5/1.9GHz LOW NOISE AMPLIFIER
GaAs MMIC
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GENERAL DESCRIPTION
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PACKAGE OUTLINE
NJG1103F1 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular
phone and Japanese PHS handsets.
This amplifier provides low noise figure, high gain
and high IP3 operated by single low positive power supply.
This amplifier can be tuned to wide frequency point.
(Best for 1.5GHz or 1.9GHz)
Small package of MTP6-1 is adopted.
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FEATURES
l
Low voltage operation
+2.7V typ.
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Low current consumption
3mA typ.
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High small signal gain
16dB typ. @f=1.489GHz
14dB typ. @f=1.9GHz
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Low Noise Figure
1.2dB typ. @f=1.489GHz
1.4dB typ. @f=1.9GHz
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High Input IP3
-4dBm typ. @f=1.489+1.4891GHz
-3dBm typ. @f=1.9+1.9001GHz
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High Output IP3
+12dBm typ. @f=1.489+1.4891GHz
+11dBm typ. @f=1.9+1.9001GHz
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Package
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
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PIN CONFIGURATION
NJG1103F1
Pin connection
1.LNAOUT
2.EXTIND
3.GND
4.GND
5.GND
6.LNAIN
Note:
is package orientation mark.
F1 TYPE
(Top View)
6
5
4
1
2
3
NJG1103F1
- 2 -
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ABSOLUTE MAXIMUM RATINGS
(T
a
=+25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD
5.0
V
Input Power
P
in
V
DD
=2.7V
+10
dBm
Power Dissipation
P
D
150
mW
Operating Temperature
T
opr
-40~+85
C
Storage Temperature
T
stg
-55~+125
C
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ELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(V
DD
=2.7V, f=1.489GHz, T
a
=+25C, Z
s
=Z
l
=50
, Circuit: Application 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq1
1.470
1.489
1.520
GHz
Drain Voltage
V
DD
2.5
2.7
4.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
14.0
16.0
18.0
dB
Gain Flatness
G
flat
f=1.47~1.52GHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.2
1.4
dB
Pout at 1dB Gain
Compression point
P
-1dB
-6.0
-2.0
-
dBm
Input 3rd Order
Intercept Point
IIP3
f=1.489+1.4891GHz
-7.0
-4.0
-
dBm
LNAIN Port VSWR
VSWR
i
-
2.0
3.0
LNAOUT Port VSWR
VSWR
o
-
2.0
3.0
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ELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(V
DD
=2.7V, f=1.9GHz, T
a
=+25C, Z
s
=Z
l
=50
, Circuit: Application 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq2
1.89
1.90
1.92
GHz
Drain Voltage
V
DD
2.5
2.7
4.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
12.0
14.0
16.0
dB
Gain Flatness
G
flat
f=1.89~1.92GHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.4
1.6
dB
Pout at 1dB Gain
Compression point
P
-1dB
-4.5
-0.5
-
dBm
Input 3rd Order
Intercept Point
IIP3
f=1.9+1.9001GHz
-6.0
-3.0
-
dBm
LNAIN Port VSWR
VSWR
i
-
2.0
3.0
LNAOUT Port VSWR
VSWR
o
-
2.0
3.0
NJG1103F1
- 3 -
14
14.5
15
15.5
16
16.5
17
2.5
3
3.5
4
4.5
5
Gain vs. V
DD
Gain(dB)
V
DD
(V)
( f=1.489GHz )
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
10
12
14
16
18
20
1.4 1.42 1.44 1.46 1.48 1.5 1.52 1.54 1.56 1.58 1.6
NF,Gain vs.frequency
NF(dB)
Gain(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3.0mA)
NF
Gain
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
S21,S11,S22,S12 vs. frequency
S21,S11,S22(dB)
S12(dB)
frequency(GHz)
S21
S22
S11
S12
(V
DD
=2.7V,I
DD
=3.0mA)
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout,IM3
Pout,IM3(dBm)
Pin(dBm)
Pout
IM3
(V
DD
=2.7V,I
DD
=3.0mA,f=1489+1489.1MHz)
IIP3=-3.8dBm
0.7
0.8
0.9
1
1.1
1.2
2.9
3
3.1
3.2
3.3
3.4
2.5
3
3.5
4
4.5
5
NF,I
DD
vs. V
DD
NF(dB)
I
DD
(mA)
V
DD
(V)
( f=1.489GHz )
I
DD
NF
-30
-25
-20
-15
-10
-5
0
5
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout
Pout(dBm)
Pin(dBm)
P-1dB=-1.1dBm
(V
DD
=2.7V,I
DD
=3.0mA,freq=1.489GHz)
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TYPICAL CHARACTERISTICS (1.5GHz Band)
NJG1103F1
- 4 -
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TYPICAL CHARACTERISTICS (1.5GHz Band)
NJG1103F1
- 5 -
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency(~20GHz)
S21(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3.0mA)
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency(~20GHz)
S12(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency(~20GHz)
S11(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3.0mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency(~20GHz)
S22(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3.0mA)
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TYPICAL CHARACTERISTICS (1.5GHz Band)
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