NJG1102F1
- 1 -
LOW NOISE AMPLIFIER GaAs MMIC
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GENERAL DESCRIPTION
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PACKAGE OUTLINE
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
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FEATURES
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Low voltage operation
+2.7V typ.
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Low current consumption
3mA typ.
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High small signal gain
17dB typ. @f=820MHz
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Low noise figure
1.4dB typ. @f=820MHz
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High Input IP3
-3dBm typ. @f=820.0+820.1MHz
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High output IP3
14dBm typ. @f=820.0+820.1MHz
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Package
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
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PIN CONFIGURATION
NJG1102F1
Pin connection
1.LNAOUT
2.NC
3.GND
4.GND
5.GND
6.LNAIN
Note: is package orientation mark.
F1 TYPE
(Top View)
6
5
4
1
2
3
NJG1102F1
- 2 -
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ABSOLUTE MAXIMUM RATINGS
(T
a
=25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD
5.0
V
Input Power
P
in
V
DD
=2.7V
+10
dBm
Power Dissipation
P
D
150
mW
Operating Temperature
T
opr
-40~+85
C
Storage Temperature
T
stg
-55~+125
C
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ELECTRICAL CHARACTERISTICS
(V
DD
=2.7V,f=820MHz,T
a
=+25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq
800
820
1000
MHz
Drain Voltage
V
DD
2.5
2.7
4.5
V
Operating Current
I
DD
RF OFF
-
3.0
4.0
mA
Small Signal Gain
Gain
15.0
17.0
19.0
dB
Gain Flatness
G
flat
f
RF
=810~885MHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.4
1.6
dB
Pout at 1dB Gain
Compression point
P
-1dB
-3.0
+1.0
-
dBm
Input 3rd Order
Intercept Point
IIP3
f=820.0~820.1MHz
-7.0
-3.0
-
dBm
RFIN Port VSWR
VSWR
i
-
2.0
3.0
RFOUT Port VSWR
VSWR
o
-
2.0
3.0
NJG1102F1
- 3 -
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
2
4
6
8
10
12
14
16
18
20
0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98
1
NF,Gain vs. frequency
NF(dB)
Gain(dB)
frequency(GHz)
Gain
NF
(V
DD
=2.7V,I
DD
=3mA)
14.5
15
15.5
16
16.5
17
17.5
2.5
3
3.5
4
4.5
5
Gain vs. V
DD
Gain(dB)
V
DD
(V)
( f=820MHz )
1.2
1.3
1.4
1.5
1.6
1.7
2.5
2.6
2.7
2.8
2.9
3
2.5
3
3.5
4
4.5
5
NF,I
DD
vs. V
DD
NF(dB)
I
DD
(mA)
V
DD
(V)
( f=820MHz )
I
DD
NF
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
S21,S11,S22,S12 vs. frequency
S21,S11,S22(dB)
S12(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21
S22
S11
S12
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout,IM3
Pout,IM3(dBm)
Pin(dBm)
Pout
IM3
(V
DD
=2.7V,I
DD
=3mA,f=820+820.1MHz)
IIP3=-3.5dBm
-30
-25
-20
-15
-10
-5
0
5
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout
Pout(dBm)
Pin(dBm)
P-1dB=+0.8dBm
(V
DD
=2.7V,I
DD
=3mA,f=820MHz)
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TYPICAL CHARACTERISTICS
NJG1102F1
- 5 -
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency(~20GHz)
S21(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency(~20GHz)
S12(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency(~20GHz)
S11(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency(~20GHz)
S22(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
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TYPICAL CHARACTERISTICS
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