ChipFind - документация

Электронный компонент: NJG1106KB2-C1

Скачать:  PDF   ZIP
NJG1106KB2
- 1
-
800MHz BAND LNA GaAs MMIC
n
GENERAL DESCRIPTION
n
PACKAGE OUTLINE
NJG1106KB2 is a low noise amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low noise figure of 1.3dB and
low current consumption of 3mA at low supply voltage
of 2.7V.
NJG1106KB2 includes internal self-bias circuit and
input DC blocking capacitor in a ultra small and ultra
thin package of FLP6-B2.
n
FEATURES
l
Low voltage operation
+2.7V typ.
l
Low current consumption
2.5mA typ.
l
Small signal gain
17dB typ. @f=820MHz
l
Low noise figure
1.3dB typ. @f=820MHz
l
High Input IP3
-4dBm typ. @f=820.0+820.1MHz
l
High Output IP3
+13dBm typ. @f=820+820.1MHz
l
Ultra small & ultra thin package
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
n
PIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1106KB2
PIN CONNECTION
1.RF
out
2.GND
3.EXTCAP
4.GND
5.GND
6.RF
in
KB2 Type
(Top View)
Package orientation mark
AMP
1
2
3
6
5
4
NJG1106KB2
- 2 -
n
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD
6.0
V
Input Power
Pin
V
DD
=2.7V
+15
dBm
Power Dissipation
P
D
Tj=125C, mount on PCB
FR4 20X20X0.2mm
450
mW
Operating Temp.
T
opr
-40 ~ +85
C
Storage Temp.
T
stg
-55 ~ +125
C
n
ELECTRICAL CHARACTERISTICS
(V
DD
=2.7V, f=820MHz, T
a
=+25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating frequency
freq
800
820
1000
MHz
Drain voltage
V
DD
2.5
2.7
5.5
V
Operating current
I
DD
RF OFF
-
2.5
3.4
mA
Small signal gain
Gain
15.0
17.0
19.0
dB
Gain flatness
G
flat
f=810~885MHz
-
0.5
1.0
dB
Noise figure
NF
-
1.3
1.5
dB
Pout at 1dB gain
compression point
P
-1dB
V
DD
=2.7V, f=820MHz
-4.0
0.0
-
dBm
Input 3rd order
Intercept point
IIP3
f=820.0+820.1MHz
-8.0
-4.0
-
dBm
Output 3rd order
Intercept point
OIP3
f=820.0+820.1MHz
+9.0
+13.0
-
dBm
RF Input port
VSWR
VSWR
i
V
DD
=2.7V, f=820MHz
-
1.5
2.0
RF Output port
VSWR
VSWR
o
V
DD
=2.7V, f=820MHz
-
1.5
2.0
NJG1106KB2
- 3 -
n
TERMINAL INFORMATION
Pin
Function
Description
1
RFout
RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L4 is a RF choke inductor and C1 is a DC blocking
capacitor. These elements are used as output matching circuit. C2 is a bypass
capacitor. (Please refer to "RECOMMENDED CIRCUIT")
2,4,5 GND
Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
3
EXTCAP
An external bypass capacitor is required. (Please refer to "RECOMMENDED
CIRCUIT")
6
RFin
RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required. (Please refer to "RECOMMENDED CIRCUIT")
NJG1106KB2
- 4 -
n
TYPICAL CHARACTERISTICS
Equations of OIP3 and IIP3
2
3
IM
-
Pout
3
=
3
OIP
Gain
-
3
OIP
=
3
IIP
@ Pin=-40dBm
0
5
10
15
20
1.0
1.5
2.0
2.5
3.0
700
750
800
850
900
950
1000
NJG1106KB2 Gain,NF vs. Freq
G
ain (dB)
NF (dB)
freq (GHz)
VDD=2.7V,IDD=2.9mA,Ta=25
o
C
Gain
NF
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
500
1000
1500
2000
NJG1106KB2 S11,S21,S12,S22 vs. Freq
S11,S21,S22 (dB)
S12 (dB)
Freq (GHz)
VDD=2.7V, IDD=2.9mA, Ta=25
o
C
S11
S21
S22
S12
-100
-80
-60
-40
-20
0
20
-45
-40
-35
-30
-25
-20
-15
-10
-5
NJG1106KB2 Pout,IM3 vs. Pin
Pout (dBm)
Pin (dBm)
VDD=2.7V, IDD=2.9mA, Freq=820+820.1MHz, Ta=25
o
C
OIP3=+13.7dBm
IIP3=-4.1dBm
Pout
IM3
-25
-20
-15
-10
-5
0
5
5.0
10
15
20
-45
-40
-35
-30
-25
-20
-15
-10
-5
NJG1106KB2 Pout,Gain vs. Pin
Pout (dBm)
G
ain (dB)
Pin (dBm)
VDD=2.7V, IDD=2.9mA, Freq=820MHz, Ta=25
o
C
P-1dB=-0.5dBm
Pout
Gain
NJG1106KB2
- 5 -
n
TYPICAL CHARACTERISTICS
Equations of OIP3 and IIP3
2
3
IM
-
Pout
3
=
3
OIP
Gain
-
3
OIP
=
3
IIP
@ Pin=-40dBm
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
NJG1106KB2 OIP3,IIP3 vs. VDD
OIP3(dBm)
IIP3 (dBm)
VDD (V)
Freq=820+820.1MHz, Ta=25
o
C
OIP3
IIP3
2.7
2.8
2.9
3.0
3.1
3.2
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
NJG1106KB2 IDD vs. VDD
IDD (mA)
VDD (V)
Freq=820MHz,Ta=25
o
C
10
12
14
16
18
20
-10
-8
-6
-4
-2
0
800
820
840
860
880
900
NJG1106KB2 OIP3,IIP3 vs. Freq
OIP3 (dBm)
IIP3 (dBm)
freq (MHz)
VDD=2.7V, IDD=3mA, Freq=820+820.1MHz, Ta=25
o
C
OIP3
IIP3
17.0
17.2
17.4
17.6
17.8
18.0
1.0
1.2
1.4
1.6
1.8
2.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
NJG1106KB2 Gain,NF vs. VDD
G
ain (dB)
NF (dB)
VDD (V)
Freq=820MHz,Ta=25
o
C
Gain
NF