NJG1107KB2
- 1 -
1.5/1.9GHz LNA GaAs MMIC
n
GENERAL DESCRIPTION
n
PACKAGE OUTLINE
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier
includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and thin package of
FLP6 is adopted.
n
FEATURES
l
Low voltage operation
+2.7V typ.
l
Low current consumption
3.0mA typ.
l
High small signal gain
17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
l
Low noise figure
1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
l
High Input IP3
-4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
l
Ultra small & ultra thin package
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
l
This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
n
PIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1107KB2
PIN Connection
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
AMP
1
2
3
6
5
4
Orientation Mark
KB2 Type
(Top View)
NJG1107KB2
- 2 -
n
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNIT
Drain Voltage
V
DD
6.0
V
Input Power
Pin
V
DD
=2.7V
+15
dBm
Power Dissipation
P
D
450
mW
Operating Temp.
T
opr
-40~+85
C
Storage Temp.
T
stg
-55~+125
C
n
ELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(V
DD
=2.7V, f=1.49GHz, T
a
=+25C, Z
s
=Z
l
=50
, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq1
1.47
1.49
1.51
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
15.0
17.0
19.0
dB
Gain Flatness
G
flat
f=1.47~1.51GHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.2
1.4
dB
Pout at 1dB Gain
Compression point
P
-1dB
-6.0
-2.0
-
dBm
Input 3rd Order
Intercept Point
IIP3
f=1.49+1.4901GHz
RFin=-35dBm
-6.0
-4.0
-
dBm
RF Input Port
VSWR
VSWR
i
-
1.6
2.2
RF Output Port
VSWR
VSWR
o
1.6
2.2
n
ELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(V
DD
=2.7V, f=1.96GHz, T
a
=+25C, Z
s
=Z
l
=50
, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq2
1.89
1.96
1.99
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
13.0
15.0
17.0
dB
Gain Flatness
G
flat
f=1.89~1.99GHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.2
1.4
dB
Pout at 1dB Gain
Compression point
P
-1dB
-3.0
+1.0
-
dBm
Input 3rd order
Intercept Point
IIP3
f=1.96+1.9601GHz
RFin=-30dBm
-6.0
-2.0
-
dBm
RF Input Port
VSWR
VSWR
i
-
1.6
2.2
RF Output Port
VSWR
VSWR
o
-
1.6
2.2
NJG1107KB2
- 3 -
n
ELECTRICAL CHARACTERISTICS 3 (1.8GHz Band)
(V
DD
=2.7V, f=1.76GHz, T
a
=+25C, Z
s
=Z
l
=50
, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq3
1.75
1.76
1.78
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
-
16.0
-
dB
Gain Flatness
G
flat
f=1.75~1.78GHz
-
0.5
-
dB
Noise Figure
NF
-
1.2
-
dB
Pout at 1dB
Compression point
P
-1dB
-
1.1
-
dBm
Input 3rd order
Intercept Point
IIP3
f=1.76+1.7601GHz
RFin=-35dBm
-
-2.0
-
dBm
RF Input Port
VSWR
VSWR
i
-
1.6
-
-
RF Output Port
VSWR
VSWR
o
-
1.6
-
-
n
ELECTRICAL CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version)
(V
DD
=2.7V, f=1.49GHz, T
a
=+25C, Z
s
=Z
l
=50
, TEST CIRCUIT2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq4
1.47
1.49
1.51
GHz
Drain Voltage
V
DD
2.5
2.7
5.5
V
Operating Current
I
DD
RF OFF
-
3.0
3.8
mA
Small Signal Gain
Gain
-
14.0
-
dB
Gain Flatness
G
flat
f=1.47~1.51GHz
-
0.5
-
dB
Noise Figure
NF
-
1.2
-
dB
Pout at 1dB
Compression point
P
-1dB
-
0.0
-
dBm
Input 3rd order
Intercept Point
IIP3
f=1.49+1.4901GHz
RFin=-35dBm
-
-3.0
-
dBm
RF Input Port
VSWR
VSWR
i
-
1.6
-
RF Output Port
VSWR
VSWR
o
-
1.6
-
NJG1107KB2
- 4 -
n
PIN CONFIGURATION
Pin
Function
Description
1
RFout
RF output and voltage supply pin. External matching circuits and a bypass capacitor
is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These
elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer
to "TEST CIRCUIT")
2,4,5 GND
Ground pin. To keep good RF grounding performance, please use multiple via holes
to connect with ground plane and this pin.
3
EXTCAP
An external bypass capacitor is required. (Please refer to "TEST CIRCUIT")
6
RFin
RF input pin. A DC blocking capacitor is not required. An external matching circuit is
required. (Please refer to "TEST CIRCUIT")
NJG1107KB2
- 5 -
n
TYPICAL CHARACTERISTICS (1.5GHz Band)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.4
1.44
1.48
1.52
1.56
1.6
NF,Gain vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
NF (dB)
G
ain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5
1
1.5
2
2.5
S21,S11,S22,S12 vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40
-30
-20
-10
0
-30
-25
-20
-15
-10
-5
0
5
10
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(V
DD
=2.7V,f=1.49GHz)
+1.17dBm
P-1dB
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-30
-20
-10
0
(V
DD
=2.7V,I
DD
=3mA,f=1.49+1.4901GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-3.15dBm
IM3
Pout
16
16.5
17
17.5
18
18.5
19
2.5
3
3.5
4
4.5
5
5.5
Gain vs. V
DD
(f=1.49GHz)
V
DD
(V)
G
ain (dB)
0.8
0.9
1
1.1
1.2
1.3
2.9
3
3.1
3.2
3.3
3.4
2.5
3
3.5
4
4.5
5
5.5
NF, I
DD
vs. V
DD
(f=1.49GHz)
NF (dB)
I
DD
(mA)
V
DD
(V)
NJG1107KB2
- 6 -
n
TYPICAL CHARACTERISTICS (1.5GHz Band)
Equations of OIP3 and IIP3
2
3
IM
-
Pout
3
=
3
OIP
Gain
-
3
OIP
=
3
IIP
@ Pin=-35dBm
-6
-4
-2
0
2
4
6
8
2.5
3
3.5
4
4.5
5
5.5
P-1dB vs. V
DD
(f=1.49GHz)
P-1dB (dBm)
V
DD
(V)
-5
-4
-3
-2
-1
0
1
2
3
4
5
10
11
12
13
14
15
16
17
18
19
20
2.5
3
3.5
4
4.5
5
5.5
IIP3, OIP3 vs. V
DD
(f=1.49+1.4901GHz, Pin=-35dBm)
OIP3 (dBm)
IIP3 (dBm)
V
DD
(V)
16
17
18
19
20
2.25
2.5
2.75
3
3.25
-40
-20
0
20
40
60
80
100
Gain, I
DD
vs. Temperature
(V
DD
=2.7V, f=1.49GHz)
G
ain (dB)
I
DD
(mA)
Temperature ( )
o
C
0.4
0.8
1.2
1.6
2
2.4
-3
-2
-1
0
1
2
-40
-20
0
20
40
60
80
100
NF, P-1dB vs. Temperature
(V
DD
=2.7V, f=1.49GHz)
NF (dB)
P-1dB (dBm)
Temperature ( )
o
C
-8
-7
-6
-5
-4
-3
-2
-1
0
13
14
15
16
17
18
19
20
21
-40
-20
0
20
40
60
80
100
IIP3, OIP3 vs. Temperature
(V
DD
=2.7V, f=1.49+1.4901GHz, Pin=-35dBm)
IIP3 (dBm)
OIP3 (dBm)
Temperature ( )
o
C
NJG1107KB2
- 7 -
n
TYPICAL CHARACTERISTICS (1.5GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S12 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S11 (dB)
frequency (GHz)
NJG1107KB2
- 8 -
n
TYPICAL CHARACTERISTICS (1.9GHz Band)
14
14.5
15
15.5
16
16.5
17
2.5
3
3.5
4
4.5
5
5.5
Gain vs. V
DD
(f=1.96GHz)
V
DD
(V)
G
ain (dB)
0.8
0.9
1
1.1
1.2
1.3
2.9
3
3.1
3.2
3.3
3.4
2.5
3
3.5
4
4.5
5
5.5
NF, I
DD
vs. V
DD
(f=1.96GHz)
NF (dB)
I
DD
(mA)
V
DD
(V)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.8
1.84
1.88
1.92
1.96
2
NF,Gain vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
NF (dB)
G
ain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
1
1.5
2
2.5
3
S21,S11,S22,S12 vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40
-30
-20
-10
0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(V
DD
=2.7V,f=1.96GHz)
+1.17dBm
P-1dB
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-30
-20
-10
0
(V
DD
=2.7V,I
DD
=3mA,f=1.96+1.9601GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.21dBm
IM3
Pout
NJG1107KB2
- 9 -
n
TYPICAL CHARACTERISTICS (1.9GHz Band)
Equations of OIP3 and IIP3
2
3
IM
-
Pout
3
=
3
OIP
Gain
-
3
OIP
=
3
IIP
@ Pin=-30dBm
-6
-4
-2
0
2
4
6
8
2.5
3
3.5
4
4.5
5
5.5
P-1dB vs. V
DD
(f=1.96GHz)
P-1dB (dBm)
V
DD
(V)
0.4
0.8
1.2
1.6
2
2.4
-3
-2
-1
0
1
2
-40
-20
0
20
40
60
80
100
NF, P-1dB vs. Temperature
(V
DD
=2.7V, f=1.96GHz)
NF (dB)
P-1dB (dB)
Temperature ( )
o
C
-4
-3
-2
-1
0
1
2
3
4
5
6
10
11
12
13
14
15
16
17
18
19
20
2.5
3
3.5
4
4.5
5
5.5
IIP3, OIP3 vs. V
DD
(f=1.96+1.9601GHz, Pin=-30dBm)
OIP3 (dBm)
IIP3 (dBm)
V
DD
(V)
14
15
16
17
18
2.25
2.5
2.75
3
3.25
-40
-20
0
20
40
60
80
100
Gain, I
DD
vs. Temperature
(V
DD
=2.7V, f=1.96GHz)
G
ain (dB)
I
DD
(mA)
Temperature ( )
o
C
-7
-6
-5
-4
-3
-2
-1
0
1
12
13
14
15
16
17
18
19
20
-40
-20
0
20
40
60
80
100
IIP3, OIP3 vs. Temperature
(V
DD
=2.7V, f=1.96+1.9601GHz, Pin=-30dBm)
IIP3 (dBm)
OIP3 (dBm)
Temperature ( )
o
C
NJG1107KB2
- 10 -
n
TYPICAL CHARACTERISTICS (1.9GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 11 -
n
TYPICAL CHARACTERISTICS (1.8GHz Band)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.65
1.7
1.75
1.8
1.85
NF,Gain vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
NF (dB)
G
ain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
1
1.5
2
2.5
3
S21,S11,S22,S12 vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-20
-10
0
10
-40
-30
-20
-10
0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(V
DD
=2.7V,f=1.76GHz)
+1.14dBm
P-1dB
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-30
-20
-10
0
(V
DD
=2.7V,I
DD
=3mA,f=1.76+1.7601GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.01dBm
IM3
Pout
NJG1107KB2
- 12 -
n
TYPICAL CHARACTERISTICS (1.8GHz Band)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
-50
-40
-30
-20
-10
0
10
20
30
40
50
S22 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
-50
-40
-30
-20
-10
0
10
20
30
40
50
S21 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 13 -
n
TYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
0.6
1
1.4
1.8
2.2
2.6
0
4
8
12
16
20
1.4
1.44
1.48
1.52
1.56
1.6
NF,Gain vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
NF (dB)
G
ain (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0.5
1
1.5
2
2.5
S21,S11,S22,S12 vs. frequency
(V
DD
=2.7V,I
DD
=3mA)
S21,S11,S22 (dB)
S12 (dB)
frequency (GHz)
S11
S22
S21
S12
-30
-25
-20
-15
-10
-5
0
5
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pout (dBm)
Pin (dBm)
Pout vs. Pin
(V
DD
=2.7V,f=1.49GHz)
+0.00dBm
P-1dB
-80
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-35
-30
-25
-20
-15
-10
-5
0
(V
DD
=2.7V,I
DD
=3mA,f=1.49+1.4901GHz)
Pout, IM3 vs. Pin
Pin (dBm)
Pout,IM3 (dBm)
IIP3
-2.89dBm
IM3
Pout
NJG1107KB2
- 14 -
n
TYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S11 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S22 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21 (dB)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency ( to 20GHz)
(V
DD
=2.7V,I
DD
=3mA)
S12 (dB)
frequency (GHz)
NJG1107KB2
- 15 -
n
TYPICAL CHARACTERISTICS
Scattering Parameter Table
V
DD
=2.7V, I
DD
=3mA, Zo=50
S11
S21
S12
S22
Freq
(GHz)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
0.1
1.000
-3.130
2.094
176.987
0.012
-25.995
0.965
-1.855
0.2
0.986
-4.217
2.074
171.002
0.002
110.707
0.967
-1.782
0.3
0.986
-6.161
2.046
165.318
0.007
92.945
0.962
-3.088
0.4
0.972
-8.026
2.012
159.545
0.003
62.606
0.960
-3.801
0.5
0.965
-10.209
1.991
153.712
0.005 103.324
0.961
-5.113
0.6
0.957
-12.032
1.943
147.933
0.004
96.002
0.953
-6.159
0.7
0.943
-13.490
1.909
143.180
0.005
75.842
0.949
-7.623
0.8
0.929
-15.249
1.851
138.232
0.008
90.203
0.940
-9.144
0.9
0.910
-16.014
1.793
133.807
0.006
93.660
0.931
-9.943
1.0
0.903
-16.960
1.765
129.856
0.009
85.810
0.928
-10.876
1.1
0.894
-18.131
1.710
125.443
0.009
95.094
0.931
-12.170
1.2
0.879
-18.645
1.673
121.935
0.010
92.781
0.921
-13.089
1.3
0.864
-19.500
1.636
118.442
0.011
91.381
0.919
-14.156
1.4
0.852
-21.338
1.627
114.415
0.012 100.617
0.919
-14.843
1.5
0.843
-22.810
1.578
110.659
0.014
99.522
0.918
-16.259
1.6
0.826
-24.483
1.541
107.013
0.014
99.175
0.914
-17.088
1.7
0.818
-24.447
1.513
104.077
0.015 100.001
0.918
-18.228
1.8
0.810
-26.509
1.503
100.734
0.016 103.271
0.925
-19.508
1.9
0.801
-27.539
1.489
97.286
0.018 106.687
0.920
-20.507
2.0
0.794
-29.642
1.452
93.725
0.019 108.548
0.921
-21.024
2.1
0.783
-30.807
1.453
90.359
0.020 106.305
0.924
-22.491
2.2
0.782
-33.473
1.421
86.597
0.022 107.071
0.922
-24.160
2.3
0.770
-34.972
1.426
83.223
0.022 107.349
0.920
-25.779
2.4
0.772
-35.870
1.391
79.970
0.026 109.866
0.919
-27.462
2.5
0.760
-37.091
1.397
76.578
0.027
112.983
0.914
-29.724
2.6
0.761
-38.975
1.376
73.069
0.030 109.600
0.920
-32.086
2.7
0.757
-40.916
1.359
68.921
0.031 106.376
0.907
-35.211
2.8
0.756
-41.260
1.322
65.450
0.034 109.318
0.902
-38.255
2.9
0.757
-42.651
1.294
62.030
0.035 106.983
0.893
-41.787
3.0
0.752
-42.892
1.267
58.521
0.036 108.989
0.879
-45.326
Scattering Parameter
Measurement Circuit
1
6
5
4
3
2
S11
S22
Ref.
1000pF
Ref.
NJG1107KB2
- 16 -
n
TYPICAL CHARACTERISTICS
(1.5GHz Band, Low Gain Version)
Scattering Parameter Table
V
DD
=2.7V, I
DD
=3mA, Zo=50
S11
S21
S12
S22
Freq
(GHz)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
0.1
1.011
-1.815
0.619
-137.421
0.006
150.071
0.998
-1.269
0.2
1.023
-4.177
1.049
-141.929
0.005
111.664
0.996
-3.638
0.3
1.027
-6.876
1.402
-152.156
0.004
72.732
0.999
-4.808
0.4
1.036
-10.171
1.681
-164.509
0.008
71.899
0.995
-6.754
0.5
1.029
-13.604
1.843
-176.486
0.006
80.582
0.993
-8.514
0.6
1.027
-17.041
1.967
172.550
0.006
96.630
0.982
-9.913
0.7
1.007
-20.090
1.997
162.037
0.010
79.136
0.983
-12.453
0.8
0.996
-22.496
1.994
153.204
0.009
78.039
0.976
-14.051
0.9
0.978
-25.098
1.967
144.936
0.009
80.635
0.967
-15.603
1.0
0.961
-27.178
1.925
137.106
0.008
73.136
0.967
-17.199
1.1
0.940
-28.800
1.857
131.070
0.010
71.678
0.961
-17.813
1.2
0.923
-30.761
1.825
124.735
0.012
76.438
0.954
-19.024
1.3
0.905
-32.462
1.785
118.431
0.011
77.174
0.948
-21.016
1.4
0.889
-33.815
1.719
113.194
0.010
78.254
0.946
-22.555
1.5
0.877
-34.976
1.679
107.647
0.014
83.456
0.947
-24.779
1.6
0.860
-36.777
1.610
102.741
0.014
73.747
0.947
-26.267
1.7
0.849
-37.774
1.568
98.621
0.014
80.053
0.942
-27.354
1.8
0.834
-39.260
1.534
94.075
0.015
85.009
0.938
-28.669
1.9
0.822
-40.858
1.490
89.890
0.015
83.753
0.939
-29.677
2.0
0.814
-42.312
1.464
85.613
0.017
88.727
0.939
-31.456
2.1
0.801
-43.887
1.435
81.588
0.017
92.695
0.938
-32.776
2.2
0.791
-45.820
1.393
77.520
0.021
98.708
0.939
-34.232
2.3
0.784
-47.584
1.365
73.663
0.019
95.532
0.936
-35.915
2.4
0.773
-49.825
1.332
69.756
0.021
93.049
0.937
-36.454
2.5
0.766
-51.948
1.311
66.211
0.024
93.358
0.940
-38.089
2.6
0.756
-54.101
1.285
62.518
0.025
97.398
0.942
-39.619
2.7
0.753
-56.479
1.260
58.997
0.028
99.809
0.946
-40.798
2.8
0.748
-59.220
1.229
55.237
0.029
93.593
0.949
-42.180
2.9
0.745
-61.715
1.213
51.930
0.031
100.273
0.947
-43.117
3.0
0.744
-64.848
1.189
48.547
0.031
97.032
0.950
-44.659
1
6
5
4
3
2
S11
S22
Ref.
10pF
Ref.
Scattering Parameter
Measurement Circuit
NJG1107KB2
- 17 -
n
TEST CIRCUIT 1 (1.5/1.8/1.9GHz Band)
n
TEST CIRCUIT 2 (1.5GHz Band, Low Gain Version)
AMP
4
5
6
3
2
1
RF Output
C2
C1
L3
VDD=2.7V
R1
EXTCAP
GND
C3
GND
RF Input
GND
L1
L2
AMP
3
2
1
4
5
6
GND
RF Input
L1
L2
GND
EXTCAP
GND
RF Output
C1
C2
L3
VDD=2.7V
L4
C3
(Top View)
(Top View)
NJG1107KB2
- 18 -
L1
L2
R1
L3 C1
C2
C3
NJG1107
RF IN
RF OUT
n
RECOMMENDED PCB DESIGN
Parts List
Constant
Comment
Parts ID
1.5GHz
Band
1.9GHz
Band
1.8GHz
Band
1.5GHzBand
Low Gain
L1
10nH
5.6nH
6.8nH
10nH
TAIYO-YUDEN HK1005 Series
L2
12nH
5.6nH
8.2nH
12nH
TAIYO-YUDEN HK1005 Series
L3
5.6nH
3.9nH
6.8nH
6.8nH
TAIYO-YUDEN HK1005 Series
L4
15nH
10nH
12nH
-
TAIYO-YUDEN HK1005 Series
C1
5pF
13pF
30pF
0.75pF
MURATA GRM36 Series
C2
1000pF
1000pF
1000pF
1000pF
MURATA GRM36 Series
C3
1000pF
1000pF
1000pF
10pF
MURATA GRM36 Series
R1
-
-
-
36
PCB: FR4 t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50
)
PCB SIZE: 14.0 x 14.0mm
1.5/1.8/1.9GHz Band
1.5GHz Band, Low Gain Version
L1
L2
L3
L4
C1
C2
C3
NJG1107
RF IN
RF OUT
(Top View)
(Top View)
NJG1107KB2
- 19 -
n
PACKAGE OUTLINE (FLP6-B2)
Lead material
: Copper
Lead surface finish : Solder plating
Molding material
: Epoxy resin
UNIT
: mm
Weight
: 6.5mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
Do NOT eat or put into mouth.
Do NOT dispose in fire or break up this product.
Do NOT chemically make gas or powder with this product.
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
2.00.1
6
5
4
1
2
3
0
.
2
0
.
2
2
.
1
0
.
1
1
.
7
0
.
1
0.65
0.65
0.750.05
+0.1
0.2- 0.05
+0.1
0
.
1
0
.
1
0.15- 0.05
PDF 
ZIP