NJG1301V
- 1 -
MEDIUM POWER AMPLIFIER GaAs MMIC
n
GENERAL DESCRIPTION
n
PACKAGE OUTLINE
NJG1301V is a medium power amplifier which is
designed for use of output stage of Japanese
PHS and digital wireless phone.
NJG1301V features low operating voltage, high
efficiency, and comes with, internal input and output matching
circuit and very small SSOP package. This amplifier is operated
up to 21dBm output level with very low noise generation.
n
FEATURES
l
Low operating voltage
+3.0V typ.
l
Low current consumption
185mA typ. @f=1.9GHz, P
out
=21dBm
l
Low distortion (ACP)
-60dBc typ. @f=1.9GHz, P
out
=21dBm
l
Reduction of redact parasitic oscillation
l
Input and output internal matching circuits
l
Package
SSOP14
n
PIN CONFIGURATION
NJG1301V
Pin connection
1.RF
in
8.RF
out
2.GND
9.GND
3.V
GG1
10.V
DD2
4.GND
11.GND
5.V
GG2
12.V
DD1
6.GND
13.GND
7.GND
14.GND
V Type
(Top View)
14
1
13
12
11
10
9
8
2
3
4
5
6
7
NJG1301V
- 2 -
n
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25
C
, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD1
,V
DD2
V
GG1
,V
GG2
=-0.9V
6
V
Gate Voltage
V
GG1
,V
GG2
V
DD1
,V
DD2
=-3.0V
-4
V
Input Power
P
in
V
DD1
,V
DD2
=-3.0V, V
GG1
,V
GG2
=-0.9V
10
dBm
Power Dissipation
P
D
At on PCB boad
600
mW
Operating Temperature
T
opr
-30~+85
C
Storage Temperature
T
stg
-40~+150
C
n
ELECTRICAL CHARACTERISTICS
(T
a
=25C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Freq.
freq
V
DD1,2
=3.0V
1.89
-
1.92
GHz
Drain Voltage
V
DD1,2
2.9
3.0
5.0
V
Gate Voltage
V
GG1,2
V
DD1,2
=3.0V, I
idle
=170mA
-1.25
-0.9
-0.6
V
Idle Current *1
I
idle
V
DD1,2
=3.0V, RF No signal
165
170
175
mA
Operating Current *1
I
DD
V
DD1,2
=3.0V, P
out
=21dBm
170
185
195
mA
Gate Current *2
I
GG
V
DD1,2
=3.0V, P
out
=21dBm
-150
-70
-
uA
Small Signal Gain
Gain
V
DD1,2
=3.0V, I
idle
=170mA
20
23
26
dB
Gain Flatness
G
flat
V
DD1,2
=3.0V, I
idle
=170mA
0
0.5
1.0
dB
Pout at 1dB Gain
Compression point
P
-1dB
V
DD1,2
=3.0V
21
22
-
dBm
Adjacent Channel
Leakage Power 1
P
acp
1
V
DD1,2
=3.0V, P
out
=21dBm
offset=600kHz, P
in
;
/4 DQPSK
-
-60
-55
dBc
Adjacent Channel
Leakage Power 2
P
acp
2
V
DD1,2
=3.0V, P
out
=21dBm
offset=900kHz, P
in
;
/4 DQPSK
-
-65
-60
dBc
Input VSWR
VSWR
i
V
DD1,2
=3.0V
-
-
2.2
Load VSWR Tolerance
-
V
DD1,2
=3.0V, P
out
=21dBm
Load VSWR=4:1, All phase
Parasitic Osc. vs Fundamental
Signal Level -60dBc Max.
*1: Total current of V
DD1
terminal and V
DD2
terminal
*2: Total current of V
GG1
terminal and V
GG2
terminal
NJG1301V
- 3 -
n
TYPICAL CHARACTERISTICS
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
Gain vs. Frequency
Gain (dB)
Frequency f (GHz)
(V
DD
=3.0V, I
DD
=170mA, V
GG
=-0.71V, T
a
=25
o
C )
100
150
200
250
-20
-10
0
10
-10
-5
0
5
10
Operating Current, Gate Current
vs. Input Power
Operating Current
I
DD
(
mA)
Gate Current
I
GG
(
u
A)
Input Power P
in
(dBm)
(V
DD
=3.0V, I
idle
=170mA, f=1.9GHz ,T
a
=25
o
C)
I
DD
I
GG
175
180
185
190
-40
-20
0
20
40
60
80
Operating Current
I
DD
(mA)
Ambient Temperature T
a
(
o
C)
Operating Current vs. Ambient Temperature
(V
DD
=3.0V, I
idle
=170mA, P
out
=21dBm, f=1.9GHz)
20
22
24
26
28
-65
-60
-55
-40
-20
0
20
40
60
80
Gain (
dBm)
P
acp
(
dBc)
Ambient Temperature T
a
(
o
C)
(V
DD
=3.0V, I
idle
=170mA, P
out
=21dBm, f=1.9GHz)
Gain, P
acp
vs. Ambient Temperature
Gain
P
acp
-75
-70
-65
-60
-55
-50
140
150
160
170
180
190
200
P
acp
vs. Operating Current vs. V
DD
P
acp
(dBc)
Operating Current I
DD
(mA)
(P
out
=21dBm ,f=1.9GHz, T
a
=25
o
C)
V
DD
=2.9V
3.0V
3.3V
5.0V
4.0V
NJG1301V
- 4 -
n
TYPICAL CHARACTERISTICS
20
21
22
23
24
25
1.89
1.90
1.91
1.92
Gain vs. PHS Band Frequency
Gain (dB)
Frequency f (GHz)
(V
DD
=3.0V, I
DD
=170mA, V
GG
=-0.71V, T
a
=25
o
C)
-30
-20
-10
0
10
20
0.0
1.0
2.0
3.0
|S
11
|, |S
22
| vs. Frequency
|S
11
|, |S
22
| (dB)
Frequency f (GHz)
(V
DD
=3.0V, I
DD
=170mA, T
a
=25
o
C)
|S
11
|
|S
22
|
-10
-5
0
5
10
15
20
25
0
50
100
150
200
250
300
350
-25
-20
-15
-10
-5
0
5
10
Output Power P
out
(dBm)
Total Current (mA)
Input Power P
in
(dBm)
Output Power,Total Current vs. Input Power
( V
DD
=3V, f=1.9GHz, T
a
=25
o
C )
Output Power @I
idle
=80mA
60mA
40mA
20mA
Total Current
@I
idle
=80mA
60mA
40mA
20mA
-10
-5
0
5
10
15
20
25
0
10
20
30
40
50
60
70
-25
-20
-15
-10
-5
0
5
10
Output Power P
out
(dBm)
Input Power P
in
(dBm)
Power Added Efficiency (%)
Output Power,P.A.E. vs. Input Power
( V
DD
=3V, f=1.9GHz, T
a
=25
o
C )
Output Power @I
idle
=80mA
60mA
40mA
20mA
P.A.E.
@I
idle
=80mA
60mA
40mA
20mA
NJG1301V
- 5 -
n
RECOMMENDED CIRCUIT
V TYPE
n
RECOMMENDED PCB DESIGN
RFin
V
GG
C1: 1000pF
C2: 33pF
C3: 1uF
C4: 2.2nH
14
1
8
7
RFin
GND
V
GG1
GND
V
GG2
GND
GND
RF
out
GND
V
DD2
GND
V
DD1
GND
GND
C2
C1
C2
C1
C3
C2
C1
C2
C1
C3
L1
V
DD
(3.0~5.0V)
RF
out
(-0.5 ~ -1.2V)
I
DD
=0 @V
GG
-2V
<
1uF
2.2nH
1uF
PCB : FR4 t=0.2mm
CAPACITOR
MURATA GRM39 Series
INDUCTOR
TAIYO-YUDEN HK1608 Series
NJG1301V
- 6 -
n
APPLICATION CIRCUIT ( NEGATIVE VOLTAGE GENERATOR)
+3.0V
V
GG
1
2
3
4
8
7
6
5
NJU7660
-3.0V
-
+
10uF
+
-
10uF
(7K
)
(3K
)
10K
Trimmer Resistance
(-0.9Vtyp.)
NJG1301V
- 7 -
n
PACKAGE OUTLINE (SSOP14)
Lead material
: Copper
Lead surface finish
: Solder plating
Molding material
: Epoxy resin
UNIT
: mm
Weight
:66mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
Do NOT eat or put into mouth.
Do NOT dispose in fire or break up this product.
Do NOT chemically make gas or powder with this product.
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
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