NJG1302V
- 1 -
MEDIUM POWER AMPLIFIER GaAs MMIC
n
GENERAL DESCRIPTION
n
PACKAGE OUTLINE
NJG1302V is a GaAs MMIC designed mainly for the
final stage power amplifier of Japanese PHS handset,
but suitable digital wireless phone and wireless LAN.
This amplifier has wide variable gain capability of 20dB
dynamic range.
NJG1302V has input and output matching circuits
internally and features low voltage and high efficiency
operation. The output power of 21dBm is easily available
with very low distortion.
n
FEATURES
l
Voltage gain under low distortion
l
Low voltage operation
+3.0V typ.
l
Low current consumption
195mA typ. @f= 1.9GHz, P
out
= 21dBm
l
High gain
32dB
l
Low distortion(ACP)
-60dBc typ. @f= 1.9GHz, P
OUT
= 21dBm
l
Reduction of Parasitic oscillation
l
Input and output internal matching circuit
l
Package
SSOP14
n
PIN CONFIGURATION
V Type
(Top View)
Pin Connection
1. RF
IN
2. GND
3. V
GG1
4. GND
5. V
CONT
6. GND
7. V
GG2
11
13
14
4
2
1
8
7
10
6
12
3
5
9
8. RF
OUT
9. GND
10. V
DD1
11. GND
12. V
DD1
13. GND
14. GND
NJG1302V
NJG1302V
- 2 -
n
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25
o
C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD1
,V
DD2
V
GG1
,V
GG2
=-0.9V
6
V
Gate Voltage
V
GG1
,V
GG2
V
DD1
,V
DD2
=-3.0V
-4
V
Gain Control Voltage
V
CONT
V
DD1
,V
DD2
=-3.0V
-4
V
Input Power
P
in
V
DD1
,V
DD2
=-3.0V, V
GG1
,V
GG2
=-0.9V
3
dBm
Power Dissipation
P
D
At on PCB board
600
mW
Operating Temperature
T
opr
-30 ~ +85
C
Storage Temperature
T
stg
-40 ~ +150
C
n
ELECTRICAL CHARACTERISTICS
(T
a
=+25
o
C, Z
s
=Z
l
=50
)
PARAMETER
SYMBOL
CONDITONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq
V
DD1,2
=3.0V
1.89
-
1.92
GHz
Drain Voltage
V
DD1,2
2.9
3.0
5.0
V
Gate Voltage
V
GG1,2
V
DD1,2
=3.0V, I
idle
=180mA
-1.25
-0.9
-0.6
V
Idle Current *1
I
idle
V
DD1,2
=3.0V, No RF Signal
175
180
185
mA
Operating Current *1
I
DD
V
DD1,2
=3.0V, P
out
=21dBm
180
195
205
mA
Gate Current *2
I
GG
V
DD1,2
=3.0V, P
out
=21dBm
-150
-70
-
uA
Gain Control Terminal
Current
I
CONT
V
DD1,2
=3.0V, P
out
=21dBm
-2.0<V
CONT
<0.0V
-5
-2
-
uA
Gain Control Voltage
V
CONT
-2.0
-
0
V
Small Signal Gain
Gain
V
DD1,2
=3.0V, I
idle
=180mA
29
32
35
dB
Gain Flatness
G
flat
V
DD1,2
=3.0V, I
idle
=180mA
0
0.5
1.0
dB
Gain Control Range
G
CONT
V
CONT
=-2~0V, V
DD1,2
=3.0V
I
idle
=180mA
18
20
23
dB
Pout at 1dB
Compression point
P
-1dB
V
DD1,2
=3.0V
22
23
-
dBm
Adjacent Channel
Leakage Power 1
P
acp
1
V
DD1,2
=3.0V, P
out
=21dBm
offset=600kHz,
P
in
;
/4 DQPSK
-
-60
-55
dBc
Adjacent Channel
Leakage Power 2
P
acp
2
V
DD1,2
=3.0V, P
out
=21dBm
offset=900kHz,
P
in
;
/4 DQPSK
-
-65
-60
dBc
Harmonics
P
SP
V
DD1,2
=3.0V, P
out
=21dBm
-
-35
-30
dBc
Input VSWR
VSWR
i
V
DD1,2
=3.0V
-
-
2.2
Load VSWR Tolerance
-
V
DD1,2
=3.0V, P
out
=21dBm
Load VSWR=4:1,All Phase
Parasitic Oscillation for
Fundamental Signal Level
:<-60dBc
*1:V
DD1
Terminal V
DD2
Terminal Total Current
*2:V
GG1
Terminal V
GG2
Terminal Total Current
=
NJG1302V
- 3 -
n
TYPICAL CHARACTERISTICS
-70
-65
-60
-55
-50
150
160
170
180
190
200
210
P
acp
vs. Operating Current vs. V
DD
P
acp
(d
Bc)
Operating Current I
DD
(mA)
V
DD
=2.9V
3.0V
3.3V
5.0V
4.0V
(P
out
=21dBm, V
cont
=0V, f=1.9GHz, T
a
=25
o
C)
-10
0
10
20
30
40
0.0
1.0
2.0
3.0
Gain vs. Frequency vs. Control Voltage
Gain (dB)
Frequency f (GHz)
V
CONT
=0V
-1.0V
-1.4V
(V
DD
=3.0V, I
DD
=180mA, T
a
=25
o
C)
12
14
16
18
20
22
24
26
-20
-15
-10
-5
0
5
10
Output Power vs. Input Power
vs. Control Voltage
Output Power P
out
(dBm)
Input Power P
in
(dBm)
V
CONT
=0V
-1V
-1.2V
-1.4V
(V
DD
=3.0V, I
idle
=180mA, f=1.9GHz, T
a
=25
o
C)
-90
-80
-70
-60
-50
-40
-30
-20
-20
-15
-10
-5
0
5
10
P
acp
vs. Input Power vs. Control Voltage
P
acp
(dBc)
Input Power P
in
(dBm)
V
CONT
=0V
-1V
-1.2V
-1.4V
(V
DD
=3.0V, I
idle
=180mA, f=1.9GHz, T
a
=25
o
C)
P
acp
(dBc)
NJG1302V
- 4 -
n
TYPICAL CHARACTERISTICS
30
31
32
33
34
-65
-60
-55
-40
-20
0
20
40
60
80
Gain, P
acp
vs. Ambient Temperature
Gain (dB)
P
acp
(dBc)
Ambient Temperature T
a
(
o
C)
(V
DD
=3.0V, V
cont
=0V, I
idle
=180mA, P
out
=21dBm, f=1.9GHz)
Gain
P
acp
100
150
200
250
-80
-60
-40
-20
-2
-1.5
-1
-0.5
0
0.5
Operating Current, P
acp
vs. Control Voltage
Operating Current I
DD
(mA)
P
acp
(dBc)
Control Voltage V
CONT
(V)
I
DD
P
acp
(V
DD
=3.0V, I
idle
=180mA, f=1.9GHz, P
in
=-11dBm, T
a
=25
o
C)
170
175
180
185
190
-40
-20
0
20
40
60
80
Operating Current vs. Ambient Temperature
Operating Current I
DD
(mA)
Ambient Temperature T
a
(
o
C)
(V
DD
=3.0V, V
cont
=0V, I
idle
=180mA, P
out
=21dBm, f=1.9GHz)
29
30
31
32
33
160
180
200
220
240
2.5
3
3.5
4
4.5
5
Gain, Operating Current vs. V
DD
Gain (dB)
Operatin Current I
DD
(mA)
Drain Voltage V
DD
(V)
I
DD
Gain
(V
cont
=0V, I
idle
=180mA@V
DD
=3.6V, P
out
=21dBm, f=1.9GHz, T
a
=25
o
C)
0
10
20
30
40
50
1.89
1.9
1.91
1.92
Gain vs PHS Band Frequency
vs. Control Voltage
Gain (dB)
Frequency f (GHz)
(V
DD
=3.0V, I
DD
=180mA, T
a
=25
o
C)
V
CONT
=0V
-1.0V
-1.4V
NJG1302V
- 5 -
n
TYPICAL CHARACTERISTICS
W
All adjacent channel leakage power used in these evaluations are those of 600kHz offset from
fundamental wave at PHS operating condition(
/4QPSK moduration)
0
5
10
15
20
25
0
20
40
60
80
100
-25
-20
-15
-10
-5
0
5
10
Output Power P
out
(dBm)
Power Added Efficiency (%)
Input Power P
in
(dBm)
Output Power, P.A.E. vs. Input Power
( V
DD2,3
=3V, V
CONT
=0V, f=1.9GHz, T
a
=25
o
C )
Output Power
@I
idle
=80mA
60mA
40mA
20mA
P.A.E.
@I
idle
=80mA
60mA
40mA
20mA
0
5
10
15
20
25
0
50
100
150
200
250
300
350
-25
-20
-15
-10
-5
0
5
10
Output Power P
out
(dBm)
Total Current (mA)
Input Power P
in
(dBm)
Output Power,Total Current vs. Input Power
( V
DD2,3
=3V, V
CONT
=0V, f=1.9GHz, T
a
=25
o
C)
Output Power
@I
idle
=80mA
60mA
40mA
20mA
Total Current
@I
idle
=80mA
60mA
40mA
20mA
-30
-20
-10
0
10
20
0
1
2
3
|S
11
| , |S
22
| (dB)
Frequency f (GHz)
|S
11
| , |S
22
| vs. Frequency
(V
DD
=3.0V, I
DD
=180mA, V
cont
=0V, T
a
=25
o
C)
|S
11
|
|S
22
|
NJG1302V
- 6 -
n
RECOMMENDED CIRCUIT
n
RECOMMENDED PCB DESIGN
RFout
GND
V
DD
2
GND
V
DD
1
GND
GND
V
GG
2
GND
V
cont
GND
V
GG
1
GND
2
14
13
12
11
10
9
8
7
6
5
4
3
1
L
1
C
2
C
1
C
3
C
3
C
2
C
1
C
2
C
1
C
2
C
1
C
1
V
GG
V
cont
(3.0~5.0V)
(0~-2V)
(-0.5~-1.2V)
I
DD
=0 @V
GG
<-2V
RFout
V
DD
RFin
RFin
C1: 1000pF
C2: 33pF
C3: 1uF
L1: 4.7nH
=
The reflow method is recommended for this device to attach on PCB
1uF
1uF
PCB : FR4 t=0.2mm
CAPACITOR
MURATA GRM39 Series
INDUCTOR
TAIYO-YUDEN HK1608 Series
4.7uF
NJG1302V
- 7 -
n
APPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR)
-3.0V
+3.0V
10uF
-
10uF
+
VGG
(-0.9V Typ.)
+V
out
6
7
4
3
2
1 2 3 4
8 7 6 5
V
cont
(0~-2V)
-V
V
CONT
(0~+2V)
500k
1M
1M
(3k
)
(7k
)
10k
Trimmer Resistance
NJU7001
NJU7660
+ -
NJG1302V
- 8 -
n
PACKAGE OUTLINE (SSOP14)
Lead material
: Copper
Lead surface finish
: Solder plating
Molding material
: Epoxy resin
UNIT
: mm
Weight
:66mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
Do NOT eat or put into mouth.
Do NOT dispose in fire or break up this product.
Do NOT chemically make gas or powder with this product.
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
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