CF5014 series
NIPPON PRECISION CIRCUITS INC.--1
Crystal Oscillator Module ICs
OVERVIEW
The CF5014 series are fundamental frequency crystal oscillator ICs. They are available for frequencies up to
60MHz. The chip layout is optimized, resulting in a large reduction in chip size, when compared to existing
devices.
FEATURES
I
2.7 to 5.5V operating supply voltage range
I
Up to 60MHz oscillation frequency range
I
40 to 85
C operating temperature range
I
Oscillation capacitors built-in
C
G
= 18pF, C
D
= 18pF
I
Inverter amplifier feedback resistor built-in
I
Standby function
High impedance in standby mode, oscillator stops
I
Low standby current
Power-save pull-up resistor built-in
I
f
O
, f
O
/2, f
O
/4, f
O
/8, or f
O
/16 output frequency,
determined by internal connection
I
CMOS output duty level (1/2VDD)
I
Molybdenum-gate CMOS process
I
Chip form (CF5014AL
)
SERIES CONFIGURATION
ORDERING INFORMATION
Version
Recommended operating frequency range
1
[MHz]
1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the
oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting condi-
tions, so the oscillation characteristics of components must be carefully evaluated.
Built-in capacitance
[pF]
Output
frequency
Standby
function
V
DD
= 2.7 to 3.6V
V
DD
= 4.5 to 5.5V
C
L
= 15pF
C
L
= 30pF
C
L
= 30pF
C
G
C
D
CF5014AL1
4 to 60
4 to 40
4 to 60
18
18
f
O
Yes
CF5014AL2
f
O
/2
Yes
CF5014AL3
f
O
/4
Yes
CF5014AL4
f
O
/8
Yes
CF5014AL5
f
O
/16
Yes
Device
Package
CF5014AL
2
Chip form
CF5014 series
NIPPON PRECISION CIRCUITS INC.--2
PAD LAYOUT
(Unit:
m)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 0.72
0.68mm
Chip thickness: 220 30m
PAD size: 90m
Chip base: V
DD
level
Name
I/O
Description
Pad dimensions [m]
X
Y
INHN
I
Output state control input. High impedance when LOW (oscillator stops).
Power-saving pull-up resistor built-in.
151
277
XT
I
Amplifier input
Crystal connection pins.
Crystal is connected between XT and XTN.
238
131
XTN
O
Amplifier output
512
131
VSS
Ground
588
345
Q
O
Output. Output frequency (f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16) determined by internal connection
588
548
VDD
Supply voltage
131
548
INHN = LOW active
Q
VDD
XTN
VSS
(0,0)
(720,680)
X
Y
HA
5014
INHN
XT
NPC
XT
VSS
VDD
Q
C
G
C
D
R
f
XTN
INHN
1/2
1/2
1/2
1/2
CF5014 series
NIPPON PRECISION CIRCUITS INC.--3
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0V
Recommended Operating Conditions
3V operation
V
SS
= 0V
5V operation
V
SS
= 0V
Parameter
Symbol
Condition
Rating
Unit
Supply voltage range
V
DD
-
0.5 to +7.0
V
Input voltage range
V
IN
-
0.5 to V
DD
+ 0.5
V
Output voltage range
V
OUT
-
0.5 to V
DD
+ 0.5
V
Operating temperature range
T
opr
-
40 to +85
C
Storage temperature range
T
STG
-
65 to +150
C
Output current
I
OUT
12
mA
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
DD
2.7 to 3.6
V
Input voltage
V
IN
V
SS
to V
DD
V
Operating temperature
T
OPR
-
40 to +85
C
Operating frequency
f
OSC
C
L
15pF
4 to 60
MHz
C
L
30pF
4 to 40
MHz
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
DD
4.5 to 5.5
V
Input voltage
V
IN
V
SS
to V
DD
V
Operating temperature
T
OPR
-
40 to +85
C
Operating frequency
f
OSC
C
L
30pF
4 to 60
MHz
CF5014 series
NIPPON PRECISION CIRCUITS INC.--4
Electrical Characteristics
3V operation
V
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta =
-
40 to +85
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 4mA
2.1
2.4
V
LOW-level output voltage
V
OL
Q: Measurement cct 1, V
DD
= 2.7V, I
OL
= 4mA
0.3
0.4
V
HIGH-level input voltage
V
IH
INHN
0.7V
DD
V
LOW-level input voltage
V
IL
INHN
0.3V
DD
V
Output leakage current
I
Z
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
10
A
V
OL
= V
SS
10
A
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF, f = 60MHz
CF5014AL1
6.5
13
mA
CF5014AL2
4
8
mA
CF5014AL3
3
6
mA
CF5014AL4
2.5
5
mA
CF5014AL5
2
4
mA
Standby current
I
ST
Measurement cct 3, INHN = LOW
5
A
INHN pull-up resistance
R
UP1
Measurement cct 4
2
6
18
M
R
UP2
30
100
300
k
Feedback resistance
R
f
Measurement cct 5
100
300
600
k
Built-in capacitance
C
G
Design value. A monitor pattern on a wafer is tested.
15.3
18
20.7
pF
C
D
15.3
18
20.7
pF
CF5014 series
NIPPON PRECISION CIRCUITS INC.--5
5V operation
V
DD
= 4.5 to 5.5V, V
SS
= 0V, Ta =
-
40 to +85
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 4.5V, I
OH
= 8mA
3.9
4.2
V
LOW-level output voltage
V
OL
Q: Measurement cct 1, V
DD
= 4.5V, I
OL
= 8mA
0.3
0.4
V
HIGH-level input voltage
V
IH
INHN
0.7V
DD
V
LOW-level input voltage
V
IL
INHN
0.3V
DD
V
Output leakage current
I
Z
Q: Measurement cct 2, INHN = LOW
V
OH
= V
DD
10
A
V
OL
= V
SS
10
A
Current consumption
I
DD
Measurement cct 3, load cct 1,
INHN = open, C
L
= 30pF, f = 60MHz
CF5014AL1
17
34
mA
CF5014AL2
11.5
23
mA
CF5014AL3
8.5
17
mA
CF5014AL4
7
14
mA
CF5014AL5
6
12
mA
Standby current
I
ST
Measurement cct 3, INHN = LOW
10
A
INHN pull-up resistance
R
UP1
Measurement cct 4
1
3
9
M
R
UP2
10
50
150
k
Feedback resistance
R
f
Measurement cct 5
100
300
600
k
Built-in capacitance
C
G
Design value. A monitor pattern on a wafer is tested.
15.3
18
20.7
pF
C
D
15.3
18
20.7
pF
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