SM5021 series
NIPPON PRECISION CIRCUITS--1
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5021 series are crystal oscillator module ICs
fabricated in NPC's Molybdenum-gate CMOS, that
incorporate high-frequency, low current consump-
tion oscillator and output buffer circuits. Highly
accurate thin-film feedback resistors and high-fre-
quency capacitors are built-in, eliminating the need
for external components to make a stable 3rd-har-
monic oscillator.
FEATURES
s
3rd overtone oscillation
s
Capacitors CG, CD built-in
s
Inverter amplifier feedback resistor built-in
(A
, B
series)
s
TTL input level
s
4 mA (V
DD
= 2.7 V) drive capability
8 mA (V
DD
= 4.5 V) drive capability
s
Output three-state function
s
2.7 to 5.5 V supply voltage (A
, K
series)
4.5 to 5.5 V supply voltage (B
, L
series)
s
Oscillator frequency output
s
6-pin SOT (SM5021
H)
s
Chip form (CF5021
)
SERIES CONFIGURATION
ORDERING INFORMATION
Version
1
1. Chip form devices have designation CF5021
.
Supply voltage
Recommended
operating frequency
range (MHz)
Built-in
capacitance
(pF)
gm
ratio
Rf
(k
)
Output
frequency
Output
level
Standby output
state
Chip
SOT
3V
5V
C
G
C
D
SM5021AAH
4.5 to 5.5
4.5 to 5.5
22 to 30
8
15
1
6.0
fo
CMOS
High impedance
SM5021ABH
2.7 to 5.5
2.7 to 5.5
22 to 30
30 to 43
8
15
1
3.3
fo
CMOS
High impedance
SM5021ACH
2.7 to 5.5
2.7 to 5.5
30 to 40
43 to 55
8
15
2
3.9
fo
CMOS
High impedance
SM5021ADH
2.7 to 5.5
2.7 to 5.5
40 to 50
55 to 70
8
15
3
2.7
fo
CMOS
High impedance
SM5021AEH
2.7 to 3.6
50 to 70
8
12
4
2.7
fo
CMOS
High impedance
SM5021BAH
4.5 to 5.5
4.5 to 5.5
22 to 30
8
15
1
6.0
fo
TTL
High impedance
SM5021BBH
4.5 to 5.5
4.5 to 5.5
30 to 43
8
15
1
3.3
fo
TTL
High impedance
SM5021BCH
4.5 to 5.5
4.5 to 5.5
43 to 55
8
15
2
3.9
fo
TTL
High impedance
SM5021BDH
4.5 to 5.5
4.5 to 5.5
55 to 70
8
15
3
2.7
fo
TTL
High impedance
SM5021KDH
2.7 to 5.5
2.7 to 5.5
22 to 50
22 to 70
8
15
3
fo
CMOS
High impedance
SM5021KEH
2.7 to 3.6
2.7 to 3.6
50 to 70
8
12
4
fo
CMOS
High impedance
SM5021LDH
4.5 to 5.5
4.5 to 5.5
22 to 70
8
15
3
fo
TTL
High impedance
Devicez
Package
SM5021
H
6-pin SOT
CF5021
2
Chip form
SM5021 series
NIPPON PRECISION CIRCUITS--2
PACKAGE DIMENSIONS
(UNIT : mm)
6-pin SOT
0.4
0.1
0.12
M
0 to 0.15
1.1
0.1
1.6
+
0.2
-
0.1
2.8
+
0.2
-
0.3
1.9
0.2
0.1
0.45
0.15
0.15
+
0.1
-
0.05
0.95
2.9
0.2
SM5021 series
NIPPON PRECISION CIRCUITS--3
PAD LAYOUT
(Unit :
m)
PINOUT
(Top View)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 1.00
0.80 mm
Chip thickness: 220 30 m
Chip base: V
DD
level
Q
VDD
XT
VSS
(0,0)
(1000,800)
INH
XT
HA5021
1
XT
VSS
Q
VDD
2
3
6
5
4
1
XT
INH
Number
Name
I/O
Description
Pad dimensions [m]
X
Y
1
INH
I
Output state control input. High impedance when LOW. Pull-up resistor built in
771
150
2
XT
I
Amplifier input.
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
553
150
3
VSS
Ground
150
140
4
Q
O
Output. Output frequency (f
O
)
150
649
5
VDD
Supply voltage
796
409
6
XT
O
Amplifier output.
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XT
836
636
XT
VSS
VDD
Q
C
G
C
D
R
f
XT
INH
SM5021 series
NIPPON PRECISION CIRCUITS--4
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0 V
Recommended Operating Conditions
V
SS
= 0 V, f
70MHz, C
L
15pF
Note: Recommended operating conditions will change in accordance with operating frequency, load capacitance, or power dissipation.
Parameter
Symbol
Condition
Rating
Unit
Supply voltage range
V
DD
-
0.5 to 7.0
V
Input voltage range
V
IN
-
0.5 to V
DD
+ 0.5
V
Output voltage range
V
OUT
-
0.5 to V
DD
+ 0.5
V
Operating temperature range
T
opr
-
40 to 85
C
Storage temperature range
T
stg
Chip form
-
65 to 150
C
6-pin SOT
-
55 to 125
Output current
I
OUT
13
mA
Power dissipation
P
D
6-pin SOT
250
mW
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
Supply voltage
V
DD
2.7
5.5
V
Input voltage
V
IN
V
SS
V
DD
V
Operating temperature
T
OPR
-
20
80
C
SM5021 series
NIPPON PRECISION CIRCUITS--5
Electrical Characteristics
3 V operation: AA, AB, AC, AD, AE series/ KD, KE series
V
DD
= 2.7 to 3.6 V, V
SS
= 0 V, Ta =
-
20 to 80
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 1, V
DD
= 2.7 V,
I
OH
= 4 mA
SM5021
AH, CF5021
A
SM5021
BH, CF5021
B
SM5021
CH, CF5021
C
SM5021
DH, CF5021
D
2.1
2.4
V
Q: Measurement cct 1, V
DD
= 2.7 V,
I
OH
= 8 mA
SM5021
EH, CF5021
E
LOW-level output voltage
V
OL
Q: Measurement cct 2, V
DD
= 2.7 V,
I
OL
= 4 mA
SM5021
AH, CF5021
A
SM5021
BH, CF5021
B
SM5021
CH, CF5021
C
SM5021
DH, CF5021
D
0.3
0.4
V
Q: Measurement cct 2, V
DD
= 2.7 V,
I
OL
= 8 mA
SM5021
EH, CF5021
E
Output leakage current
I
Z
Q: Measurement cct 2, V
DD
= 3.3 V, INH = LOW, V
OH
= V
DD
10
A
Q: Measurement cct 2, V
DD
= 3.3 V, INH = LOW, V
OL
= V
SS
10
HIGH-level input voltage
V
IH
INH
2.0
V
LOW-level input voltage
V
IL
INH
0.5
V
Current consumption
I
DD
INH = open, Measurement cct 3,
load cct 1, C
L
= 15 pF,
70 MHz crystal oscillator
SM5021A
H, CF5021A
SM5021K
H, CF5021K
13
25
mA
INH pull-up resistance
R
UP
Measurement cct 4
25
100
250
k
Feedback resistance
(A
series only)
R
f
Measurement cct 5
SM5021
AH, CF5021
A
5.1
6.0
6.9
k
SM5021
BH, CF5021
B
2.8
3.3
3.8
SM5021
CH, CF5021
C
3.3
3.9
4.5
SM5021
DH, CF5021
D
SM5021
EH, CF5021
E
2.3
2.7
3.1
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
7.44
8
8.56
pF
C
D
Design value, determined by the
internal wafer pattern
SM5021
AH, CF5021
A
SM5021
BH, CF5021
B
SM5021
CH, CF5021
C
SM5021
DH, CF5021
D
13.95
15
16.05
pF
SM5021
EH, CF5021
E
11.16
12
12.84
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