SM5009 series
NIPPON PRECISION CIRCUITS--1
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5009 series are crystal oscillator module ICs, that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency capacitors are built-in, eliminating the need for external
components to make a stable fundamental-harmonic oscillator.
FEATURES
I
Capacitors C
G
, C
D
built-in
I
Standby function
I
6
A typ (V
DD
=
5 V) low standby current
(SM5009AL
S)
I
Power-save pull-up resistor built-in
(SM5009AL
S)
I
Inverter amplifier feedback resistor built-in
I
16 mA (V
DD
=
4.5 V) drive capability
(SM5009AK
S, AL
S, AN
S, CN
S)
I
4 mA (V
DD
=
4.5 V) drive capability
(SM5009AH
S)
I
Output three-state function
I
2.25 to 5.5 V supply voltage (CF5009AL
)
I
2.7 to 5.5 V supply voltage
(SM5009AH
S, AL
S, AN
S, CN
S)
I
Oscillator frequency output (f
O
, f
O
/2, f
O
/4, f
O
/8,
f
O
/16, f
O
/32 determined by internal connection)
I
8-pin SOP (SM5009
S)
I
Chip form (CF5009
)
SERIES CONFIGURATION
Note: R e c o m m e n d e d o p e rating frequency is not the guaranteed value but is measured using NPC's standard crystal.
ORDERING INFORMATION
V ersion
1 , 2
1. Chip form d evices have designation CF5009
.
2. S M 5 0 0 9 A H
S: V
D D
= 4.5 to 5.5V
S M 5 0 0 9 A K
S: Ta = 20 to +85
C
S u p p ly
voltag e
[V]
Output
frequency
3V operating
5V operating
Built-in
capacitance
Input
level
Output
duty
level
S t a n d by
function
Output
load
(max)
[pF]
R e c o m m e n d e d
operating
frequency
r a n g e
3
[MHz]
3. S M 5 0 0 9 A H
S , AN
S , AL
S: Ta = 20 to +80
C
S M 5 0 0 9 C N
S: Ta = 10 to +70
C
Output
load
(max)
[pF]
R e c o m m e n d e d
operating
frequency
r a n g e
4
[MHz]
4. S M 5 0 0 9 A N
S , AL
S: Ta = 20 to +80
C
C
G
[pF]
C
D
[pF]
S M 5 0 0 9 A H 1 S
2.7 to 5.5
f
O
1 5
1 6
1 5
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A H 2 S
2.7 to 5.5
f
O
/2
1 5
1 6
1 5
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A H 3 S
2.7 to 5.5
f
O
/4
1 5
1 6
1 5
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A H 4 S
2.7 to 5.5
f
O
/8
1 5
1 6
1 5
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A K 1 S
4.5 to 5.5
f
O
1 5
4 0
6
1 0
T T L
T T L
N o
S M 5 0 0 9 A K 2 S
4.5 to 5.5
f
O
/2
1 5
4 0
6
1 0
T T L
T T L
N o
S M 5 0 0 9 A N 1 S
2.7 to 5.5
f
O
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A N 2 S
2.7 to 5.5
f
O
/2
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A N 3 S
2.7 to 5.5
f
O
/4
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A N 4 S
2.7 to 5.5
f
O
/8
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A N 5 S
2.7 to 5.5
f
O
/16
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A N 6 S
2.7 to 5.5
f
O
/32
3 0
4 0
5 0
4 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 C N 1 S
2.7 to 5.5
f
O
1 5
3 0
5 0
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 C N 2 S
2.7 to 5.5
f
O
/2
1 5
3 0
5 0
3 0
6
1 0
T T L
C M O S
N o
S M 5 0 0 9 A L 1 S
2.7 to 5.5
f
O
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
S M 5 0 0 9 A L 2 S
2.7 to 5.5
f
O
/2
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
S M 5 0 0 9 A L 3 S
2.7 to 5.5
f
O
/4
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
S M 5 0 0 9 A L 4 S
2.7 to 5.5
f
O
/8
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
S M 5 0 0 9 A L 5 S
2.7 to 5.5
f
O
/16
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
S M 5 0 0 9 A L 6 S
2.7 to 5.5
f
O
/32
3 0
4 0
5 0
4 0
6
1 0
C M O S
C M O S
Yes
D e vice
P a ck ag e
S M 5 0 0 9
S
8-pin SOP
C F 5 0 0 9
1
Chip form
SM5009 series
NIPPON PRECISION CIRCUITS--3
PAD LAYOUT
(Unit:
m)
PINOUT
(Top view)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 0.92
1.22 mm
Chip thickness: 300 30 m
Chip base: V
D D
level
Q
VDD
XT
VSS
(0,0)
(920,1220)
X
Y
HA5009
INH
XT
1
XT
VSS
Q
VDD
4
2
3
NC
NC
8
7
6
5
009
XT
INH
N u m b e r
N a m e
I/O
Description
P ad dimensions [m]
X
Y
1
I N H
I
Output state control input. High impedance when LOW . In the case of the
S M 5 0 0 9 A L
S , the oscillator stops and Pow er-saving pull-up resistor built in.
1 9 5
2 1 2
2
X T
I
Amplifier input.
Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and X T
3 8 5
2 1 2
3
X T
O
Amplifier output.
5 7 5
2 1 2
4
V S S
G r o u n d
7 6 6
2 1 2
5
Q
O
Output. Output frequency (f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16, f
O
/32) determined by
internal connection
7 6 5
1 0 6 2
6
N C
No connection
7
N C
No connection
8
V D D
Supply voltage
1 6 2
1 0 6 2
XT
VSS
VDD
Q
C
G
C
D
R
f
XT
INH
1/2
1/2
1/2
1/2
1/2
SM5009 series
NIPPON PRECISION CIRCUITS--5
Electrical Characteristics
5009AH series
3 V operation: V
DD
= 2.7 to 3.3 V, V
SS
= 0 V, Ta =
-20 to 80 C unless otherwise noted.
5 V operation: V
DD
= 4.5 to 5.5 V, V
SS
= 0 V, Ta =
-40 to 85 C unless otherwise noted.
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
HIGH-level output voltage
V
O H
Q: Measurement cct 1, I
O H
= 2 m A
2.2
V
L O W -level output voltage
V
O L
Q: Measurement cct 1, I
O L
= 2 m A
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, I N H = L O W , V
O H
= V
D D
1 0
A
Q: Measurement cct 2, I N H = L O W , V
O L
= V
S S
1 0
HIGH-level input voltage
V
IH
I N H
2.0
V
L O W -level input voltage
V
IL
I N H
0.3
V
Current consumption
I
D D
I N H = open, Measurement cct 3,
load cct 2, C
L
= 15 p F,
16 MHz cr ystal oscillator
S M 5 0 0 9 A H 1 S
C F 5 0 0 9 A H 1
4.5
1 0
m A
S M 5 0 0 9 A H 2 S
C F 5 0 0 9 A H 2
3
7
S M 5 0 0 9 A H 3 S
C F 5 0 0 9 A H 3
S M 5 0 0 9 A H 4 S
C F 5 0 0 9 A H 4
1.5
3
I N H pull-up resistance
R
U P
Measurement cct 4, V
D D
= 3 V, I N H = V
S S
4 0
2 0 0
k
Negative resistance
-R
L
V
D D
= 3 V, Ta = 25
C, 16 M H z
4 5 0
F e e d b a ck resistance
R
f
Measurement cct 5
0.4
1.1
M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
5.58
6
6.42
p F
C
D
9.3
1 0
10.7
p F
P arameter
S y m b o l
Condition
Rating
Unit
m i n
typ
m a x
HIGH-level output voltage
V
O H
Q: Measurement cct 1, I
O H
= 4 m A
4.0
V
L O W -level output voltage
V
O L
Q: Measurement cct 1, I
O L
= 4 m A
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, I N H = L O W , V
O H
= V
D D
1 0
A
Q: Measurement cct 2, I N H = L O W , V
O L
= V
S S
1 0
HIGH-level input voltage
V
IH
I N H
2.0
V
L O W -level input voltage
V
IL
I N H
0.8
V
Current consumption
I
D D
I N H = open, Measurement cct 3,
load cct 2, C
L
= 15 p F,
30 MHz cr ystal oscillator
S M 5 0 0 9 A H 1 S
C F 5 0 0 9 A H 1
9
2 0
m A
S M 5 0 0 9 A H 2 S
C F 5 0 0 9 A H 2
6
1 3
S M 5 0 0 9 A H 3 S
C F 5 0 0 9 A H 3
S M 5 0 0 9 A H 4 S
C F 5 0 0 9 A H 4
4
9
I N H pull-up resistance
R
U P
Measurement cct 4, V
D D
= 5 V, I N H = V
S S
4 0
2 0 0
k
Negative resistance
-R
L
V
D D
= 5 V, Ta = 25
C, 30 M H z
3 4 0
F e e d b a ck resistance
R
f
Measurement cct 5
0.4
1.1
M
Built-in capacitance
C
G
Design value, determined by the internal wafer pattern
5.58
6
6.42
p F
C
D
9.3
1 0
10.7
p F
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