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Электронный компонент: 74VHC4046NX

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TL F 11675
74VHC4046
CMOS
Phase
Lock
Loop
October 1995
74VHC4046
CMOS Phase Lock Loop
General Description
The 74VHC4046 is a low power phase lock loop utilizing
advanced silicon-gate CMOS technology to obtain high fre-
quency operation both in the phase comparator and VCO
sections This device contains a low power linear voltage
controlled oscillator (VCO) a source follower and three
phase comparators The three phase comparators have a
common signal input and a common comparator input The
signal input has a self biasing amplifier allowing signals to
be either capacitively coupled to the phase comparators
with a small signal or directly coupled with standard input
logic levels This device is similar to the CD4046 except that
the Zener diode of the metal gate CMOS device has been
replaced with a third phase comparator
Phase Comparator I is an exclusive OR (XOR) gate It pro-
vides a digital error signal that maintains a 90 phase shift
between the VCO's center frequency and the input signal
(50% duty cycle input waveforms) This phase detector is
more susceptible to locking onto harmonics of the input fre-
quency than phase comparator I but provides better noise
rejection
Phase comparator III is an SR flip-flop gate It can be used
to provide the phase comparator functions and is similar to
the first comparator in performance
Phase comparator II is an edge sensitive digital sequential
network Two signal outputs are provided a comparator out-
put and a phase pulse output The comparator output is a
TRI-STATE
output that provides a signal that locks the
VCO output signal to the input signal with 0 phase shift be-
tween them This comparator is more susceptible to noise
throwing the loop out of lock but is less likely to lock onto
harmonics than the other two comparators
In a typical application any one of the three comparators
feed an external filter network which in turn feeds the VCO
input This input is a very high impedance CMOS input
which also drives the source follower The VCO's operating
frequency is set by three external components connected to
the C1A C1B R1 and R2 pins An inhibit pin is provided to
disable the VCO and the source follower providing a meth-
od of putting the IC in a low power state
The source follower is a MOS transistor whose gate is con-
nected to the VCO input and whose drain connects the De-
modulator output This output normally is used by tying a
resistor from pin 10 to ground and provides a means of
looking at the VCO input without loading down modifying the
characteristics of the PLL filter
Features
Y
Low dynamic power consumption
(V
CC
e
4 5V)
Y
Maximum VCO operating frequency
12 MHz
(V
CC
e
4 5V)
Y
Fast comparator response time (V
CC
e
4 5V)
Comparator I
25 ns
Comparator II
30 ns
Comparator III
25 ns
Y
VCO has high linearity and high temperature stability
Y
Pin and function compatible with the 74HC4046
Commercial
Package
Package Description
Number
74VHC4046M
M16A
16-Lead Molded JEDEC SOIC
74VHC4046N
N16E
16-Lead Molded DIP
Note
Surface mount packages are also available on Tape and Reel Specify by appending the suffix letter ``X'' to the ordering code
TRI-STATE
is a registered trademark of National Semiconductor Corporation
C1995 National Semiconductor Corporation
RRD-B30M125 Printed in U S A
Block and Connection Diagrams
TL F 11675 1
Pin Assignment for
SOIC and PDIP
TL F 11675 2
2
Absolute Maximum Ratings
(Notes 1
2)
Supply Voltage (V
CC
)
b
0 5 to
a
7 0V
DC Input Voltage (V
IN
)
b
1 5 to V
CC
a
1 5V
DC Output Voltage (V
OUT
)
b
0 5 to V
CC
a
0 5V
Clamp Diode Current (I
IK
I
OK
)
g
20 mA
DC Output Current per pin (I
OUT
)
g
25 mA
DC V
CC
or GND Current per pin (I
CC
)
g
50 mA
Storage Temperature Range (T
STG
)
b
65 C
a
150 C
Power Dissipation (P
D
)
(Note 3)
600 mW
S O Package only
500 mW
Lead Temperature (T
L
)
(Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage (V
CC
)
2
6
V
DC Input or Output Voltage
0
V
CC
V
(V
IN
V
OUT
)
Operating Temp Range (T
A
)
74VHC
b
40
a
85
C
Input Rise or Fall Times
(t
r
t
f
)
V
CC
e
2 0V
1000
ns
V
CC
e
4 5V
500
ns
V
CC
e
6 0V
400
ns
DC Electrical Characteristics
(Note 4)
T
A
e
25 C
74VHC
Symbol
Parameter
Conditions
V
CC
T
A
e b
40 to 85 C
Units
Typ
Guaranteed Limits
V
IH
Minimum High Level Input
2 0V
1 5
1 5
V
Voltage
4 5V
3 15
3 15
V
6 0V
4 2
4 2
V
V
IL
Maximum Low Level Input
2 0V
0 5
0 5
V
Voltage
4 5V
1 35
1 35
V
6 0V
1 8
1 8
V
V
OH
Minimum High Level Output
V
IN
e
V
IH
or V
IL
Voltage
l
I
OUT
l
s
20 mA
2 0V
2 0
1 9
1 9
V
4 5V
4 5
4 4
4 4
V
6 0V
6 0
5 9
5 9
V
V
IN
e
V
IH
or V
IL
l
I
OUT
l
s
4 0 mA
4 5V
4 2
3 98
3 84
V
l
I
OUT
l
s
5 2 mA
6 0V
5 7
5 48
5 34
V
V
OL
Maximum Low Level Output
V
IN
e
V
IH
or V
IL
Voltage
l
I
OUT
l
s
20 mA
2 0V
0
0 1
0 1
V
4 5V
0
0 1
0 1
V
6 0V
0
0 1
0 1
V
V
IN
e
V
IH
or V
IL
l
I
OUT
l
s
4 0 mA
4 5V
0 2
0 26
0 33
V
l
I
OUT
l
s
5 2 mA
6 0V
0 2
0 26
0 33
V
I
IN
Maximum Input Current (Pins 3 5 9)
V
IN
e
V
CC
or GND
6 0V
g
0 1
g
1 0
m
A
I
IN
Maximum Input Current (Pin 14)
V
IN
e
V
CC
or GND
6 0V
20
50
80
m
A
I
OZ
Maximum TRI-STATE Output
V
OUT
e
V
CC
or GND
6 0V
g
0 25
g
2 5
m
A
Leakage Current (Pin 13)
I
CC
Maximum Quiescent Supply
V
IN
e
V
CC
or GND
6 0V
30
40
65
m
A
Current
I
OUT
e
0 mA
V
IN
e
V
CC
or GND
6 0V
600
750
1200
m
A
Pin 14 Open
Note 1
Maximum Ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power Dissipation temperature derating
plastic ``N'' package
b
12 mW C from 65 C to 85 C
Note 4
For a power supply of 5V
g
10% the worst case output voltages (V
OH
and V
OL
) occur for VHC at 4 5V Thus the 4 5V values should be used when
designing with this supply Worst case V
IH
and V
IL
occur at V
CC
e
5 5V and 4 5V respectively (The V
IH
value at 5 5V is 3 85V ) The worst case leakage current (I
IN
I
CC
and I
OZ
) occur for CMOS at the higher voltage and so the 6 0V values should be used
3
AC Electrical Characteristics
V
CC
e
2 0 to 6 0V CL
e
50 pF t
r
e
t
f
e
6 ns (unless otherwise specified )
Symbol
Parameters
Conditions
V
CC
T
e
25C
74VHC
Units
Typ
Guaranteed Limits
AC Coupled
C (series)
e
100 pF
2 0V
25
100
150
mV
Input Sensitiv-
f
IN
e
500 kHz
4 5V
50
150
200
mV
ity Signal In
6 0V
135
250
300
mV
t
r
t
f
Maximum Output
2 0V
30
75
95
ns
Rise and Fall
4 5V
9
15
19
ns
Time
6 0V
8
12
15
ns
C
IN
Maximum Input
7
pF
Capacitance
Phase Comparator I
t
PHL
t
PLH
Maximum Prop-
3 3V
65
117
146
ns
agation Delay
4 5V
25
40
50
ns
6 0V
20
34
43
ns
Phase Comparator II
t
PZL
Maximum TRI-
3 3V
75
130
160
ns
STATE Enable
4 5V
25
45
56
ns
Time
6 0V
22
38
48
ns
t
PZH
t
PHZ
Maximum TRI-
3 3V
88
140
175
ns
STATE Enable
4 5V
30
48
60
ns
Time
6 0V
25
41
51
ns
t
PLZ
Maximum TRI-
3 3V
90
140
175
ns
STATE Disable
4 5V
32
48
60
ns
Time
6 0V
28
41
51
ns
t
PHL
t
PLH
Maximum Prop-
3 3V
100
146
180
ns
agation Delay
4 5V
34
50
63
ns
High to Low
6 0V
27
43
53
ns
to Phase Pulses
Phase Comparator III
t
PHL
t
PLH
Maximum Prop-
3 3V
75
117
146
ns
agation Delay
4 5V
25
40
50
ns
6 0V
22
34
43
ns
C
PD
Maximum Power
All Comparators
130
pF
Dissipation
V
IN
e
V
CC
and GND
Capacitance
Voltage Controlled Oscillator (Specified to operate from V
CC
e
3 0V to 6 0V)
f
MAX
Maximum
C1
e
50 pF
Operating
R1
e
100X
4 5V
7
4 5
MHz
Frequency
R2
e
%
6 0V
11
7
MHz
VCO
in
e
V
CC
C1
e
0 pF
4 5V
12
MHz
R1
e
100X
6 0
14
MHz
VCO
in
e
V
CC
Duty Cycle
50
%
Demodulator Output
Offset Voltage
R
s
e
20 kX
4 5V
0 75
1 3
1 5
V
VCO
in
V
dem
Offset
R
s
e
20 kX
4 5V
Variation
VCO
in
e
1 75V
0 65
V
2 25V
0 1
2 75V
0 75
4
Typical Performance Characteristics
Typical Center Frequency
vs R1 C1
V
CC
e
4 5V
TL F 11675 3
Typical Center Frequency
vs R1 C1
V
CC
e
6V
TL F 11675 4
Typical Offset Frequency
vs R2 C1
V
CC
e
4 5V
TL F 11675 5
Typical Offset Frequency
vs R2 C1
V
CC
e
6V
TL F 11675 6
5