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Электронный компонент: DS8963

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TL F 5839
DS8863DS8963
MOS-to-LED
8-Digit
Driver
June 1986
DS8863 DS8963 MOS-to-LED 8-Digit Driver
General Description
The DS8863 and DS8963 are designed to be used in con-
junction with MOS integrated circuits and common-cathode
LED's in serially addressed multi-digit displays
The DS8863 is an 8-digit driver Each driver is capable of
sinking up to 500 mA
The DS8963 is identical to the DS8863 except it is intended
for operation at up to 18V
Features
Y
500 mA sink capability per driver DS8863 DS8963
Y
MOS compatibility (low input current)
Y
Low standby power
Y
High gain Darlington circuits
Schematic and Connection Diagrams
TL F 5839 1
Dual-In-Line Package
TL F 5839 2
Top View
Order Number DS8863N or DS8963N
See NS Package Number N18A
C1995 National Semiconductor Corporation
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
DS8863
DS8963
Input Voltage Range
(Note 1)
b
5V to V
SS
b
5V to V
SS
Collector (Output) Voltage
(Note 2)
10V
18V
Collector (Output)-to-Input
Voltage
10V
18V
Emitter-to-Ground Voltage
(V
I
t
5V)
Emitter-to-Input Voltage
Voltage at V
SS
Terminal With
Respect to Any Other
Device Terminal
10V
18V
DS8863
DS8963
Collector (Output) Current
Each Collector (Output)
500 mA
500 mA
All Collectors (Output)
600 mA
600 mA
Continuous Total
Dissipation
800 mW
800 mW
Operating Temperature
Range
0 C to
a
70 C
0 C to
a
70 C
Storage Temperature
Range
b
65 C to
a
150 C
Maximum Power Dissipation
at 25 C
Molded Package
1563 mW
1563 mW
Lead Temperature
(Soldering 4 sec )
260 C
260 C
Derate molded package 12 5 mW C above 25 C
Electrical Characteristics
V
SS
e
10V T
A
e
0 C to
a
70 C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
OL
Low Level Output Voltage
V
IN
e
7V I
OUT
e
500 mA
T
A
e
25 C
1 5
V
1 6
V
I
OH
High Level Output Current
V
OH
e
10V
I
IN
e
40 mA
250
m
A
V
IN
e
0 5V
250
m
A
I
I
Input Current at Maximum Input Voltage
V
IN
e
10V I
OL
e
20 mA
2
mA
I
SS
Current into V
SS
Terminal
1
mA
18V for the DS8963
Switching Characteristics
V
SS
e
7 5V T
A
e
25 C
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
PLH
Propagation Delay Time Low-to-High Level Output
V
IH
e
8V R
L
e
20X
300
ns
t
PHL
Propagation Delay Time High-to-Low Level Output
C
L
e
15 pF
30
ns
Note 1
The input is the only device terminal which may be negative with respect to ground
Note 2
Voltage values are with respect to network ground terminal unless otherwise noted
2
AC Test Circuits and Waveforms
DS8863
TL F 5839 3
TL F 5839 4
Note 1
The pulse generator has the following characteristics Z
OUT
e
50X PRR
e
100 KHz t
W
e
1ms
Note 2
C
L
includes probe and jig capacitance
3
DS8863DS8963
MOS-to-LED
8-Digit
Driver
Physical Dimensions
inches (millimeters)
Molded Dual-In-Line Package (N)
Order Number DS8863N or DS8963N
NS Package Number N18A
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION As used herein
1 Life support devices or systems are devices or
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systems which (a) are intended for surgical implant
support device or system whose failure to perform can
into the body or (b) support or sustain life and whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system or to affect its safety or
with instructions for use provided in the labeling can
effectiveness
be reasonably expected to result in a significant injury
to the user
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National Semiconductor
National Semiconductor
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