TL H 5713
LM113LM313
Reference
Diode
December 1994
LM113 LM313 Reference Diode
General Description
The LM113 LM313 are temperature compensated low volt-
age reference diodes They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit As such they have the
same low noise and long term stability as modern IC op
amps Further output voltage of the reference depends only
on highly-predictable properties of components in the IC so
they can be manufactured and supplied to tight tolerances
Features
Y
Low breakdown voltage 1 220V
Y
Dynamic impedance of 0 3X from 500 mA to 20 mA
Y
Temperature stability typically 1% over
b
55 C to 125 C
range (LM113) 0 C to 70 C (LM313)
Y
Tight tolerance
g
5%
g
2% or
g
1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry in low-voltage power supplies or in
battery powered equipment The fact that the breakdown
voltage is equal to a physical property of silicon
the ener-
gy-band gap voltage
makes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions
Schematic and Connection Diagrams
Metal Can Package
Order Number
LM113H LM113H 883
LM113-1H LM113-1H 883
LM113-2H LM113-2H 883
or LM313H
See NS Package Number H02A
TL H 5713 1
Typical Applications
Level Detector for Photodiode
Low Voltage Regulator
Solid tantalum
TL H 5713 2
C1995 National Semiconductor Corporation
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 3)
Power Dissipation (Note 1)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
b
65 C to
a
150 C
Lead Temperature
(Soldering 10 seconds)
300 C
Operating Temperature Range
LM113
b
55 C to
a
125 C
LM313
0 C to
a
70 C
Electrical Characteristics
(Note 2)
Parameter
Conditions
Min
Typ
Max
Units
Reverse Breakdown Voltage
LM113 LM313
I
R
e
1 mA
1 160
1 220
1 280
V
LM113-1
1 210
1 22
1 232
V
LM113-2
1 195
1 22
1 245
V
Reverse Breakdown Voltage
0 5 mA
s
I
R
s
20 mA
6 0
15
mV
Change
Reverse Dynamic Impedance
I
R
e
1 mA
0 2
1 0
X
I
R
e
10 mA
0 25
0 8
X
Forward Voltage Drop
I
F
e
1 0 mA
0 67
1 0
V
RMS Noise Voltage
10 Hz
s
f
s
10 kHz
5
m
V
I
R
e
1 mA
Reverse Breakdown Voltage
0 5 mA
s
I
R
s
10 mA
15
mV
Change with Current
T
MIN
s
T
A
s
T
MAX
Breakdown Voltage Temperature
1 0 mA
s
I
R
s
10 mA
0 01
% C
Coefficient
T
MIN
s
T
A
s
T
MAX
Note 1
For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C W junction to
case or 440 C W junction to ambient
Note 2
These specifications apply for T
A
e
25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than
inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 0 1 mF unless isolated by at
least a 100X resistor as it may oscillate at some currents
Note 3
Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113
Typical Performance Characteristics
Temperature Drift
Reverse Dynamic Impedance
Reverse Characteristics
TL H 5713 3
2
Typical Performance Characteristics
(Continued)
Reverse Characteristics
Reverse Dynamic Impedance
Noise Voltage
Forward Characteristics
Response Time
Maximum Shunt Capacitance
TL H 5713 4
Typical Applications
(Continued)
Amplifier Biasing for Constant Gain with Temperature
Constant Current Source
Thermometer
Adjust for 0V at 0 C
Adjust for 100 mV C
TL H 5713 5
3
LM113LM313
Reference
Diode
Physical Dimensions
inches (millimeters)
Order Number LM113H LM113H 883 LM113-1H LM113-1H 883
LM113-2H LM113-2H 883 or LM313H
NS Package Number H02A
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effectiveness
be reasonably expected to result in a significant injury
to the user
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