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Электронный компонент: LMC2626

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TL H 12541
LMC2626
CMOS
LDORBuffer
Chip
for
Row
Inversion
Flat
Panel
Display
Systems
PRELIMINARY
November 1995
LMC2626
CMOS LDOR Buffer Chip for Row
Inversion Flat Panel Display Systems
General Description
The LMC2626 integrated circuit is specifically developed for
a row inversion TFT FPD system architecture It is designed
only to be used in conjunction with National's LM2625
switching regulator chip
Built on National's advanced CMOS CS80 process this chip
generates a high-power precision square-wave from a digi-
tal sync signal The chip also contains thermal shutdown
circuitry system shutdown circuitry and a low drop-out volt-
age regulator to generate a 4 2 volt supply from an external-
ly applied reference voltage of 1 227V
Features
Y
Used in conjunction with LM2625 chip
Y
High output current buffer
Y
Low buffer on resistance
Y
System shutdown control
Y
LDO voltage regulator
Y
LDOR dropout 0 3V maximum at 150 mA
Y
Thermal shutdown short circuit protection
Y
External reference required for LDOR
Y
V
REF
pin converts to a digital pin to shutdown LM2625
Connection Diagram
8-Pin SO
TL H 12541 1
Top View
Pin Description
Pin
Pin Name
Description
1
V
REF
1 218V to 1 242V Ext Reference
from LM2625 (see Note 8)
2
SD
System Shutdown input pin for
LMC2626 and LMC2625
3
SYNC
Digital input square wave from FPD
controller
4
GND
Ground
5
P5V
Precision Regulated
a
5V Supply
6
V
OUT
Power Buffer Output
7
V
IN
FPD System Supply (
a
4 5V to
a
5 5V)
8
V
SH
Low Drop-Out Voltage Regulator
Output
Ordering Information
Package
Temperature Range
NSC
Transport
b
40 C to
a
85 C
Drawing
Media
8-Pin SO
LMC2626IM
M08A
Rail
Tape and
Reel
C1996 National Semiconductor Corporation
RRD-B30M26 Printed in U S A
Absolute Maximum Ratings
(Note 1)
ESD Tolerance 2 kV HBM 200V MM (Note 4)
Sync Input Voltage
P5V
Supply Voltage (V
IN
P5V)
6 3V
Continuous Total Power Dissipation (Note 1)
Lead Temperature (less than 10 sec)
260 C
Storage Temperature Range
b
65 C to
a
150 C
Junction Temperature
150 C
Operating Ratings
(Note 1)
V
IN
Supply Voltage
4 5V
s
V
IN
s
5 5V
P5V Supply Voltage (Note 5)
4 8V
s
P5V
s
5 2V
Junction Temperature Range
b
25 C to
a
125 C
Ambient Temperature Range
b
40 C to
a
85 C
DC Electrical Characteristics
Unless otherwise specified all limits guaranteed for
b
20 C
s
T
A
s
a
85 C P5V
e
5V and 4 5V
s
V
IN
s
5 5V V
REF
e
1 227V
SYNC(OPEN) SD(OPEN)
k
P5V
e
V
IN
e
5V
VSH LDO Voltage Regulator
(Notes 7 10 11)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 9)
V
O(VREF)
V
REF
Voltage Level
SD
e
0V
in Shutdown
I
VREF
e b
1 mA
4 00
4 76
V
V
IN
e
5V
I
VREF
DC Current from
b
40 0
b
13 3
b
5
m
A
V
REF
Pin
V
SH
Output Voltage on
4 5V
s
V
IN
s
5 5V
V
SH
Pin (see Note 2)
20 mA
s
IL
s
150 mA
4 10
4 20
4 30
V
1 218
s
V
REF
s
1 242
D
V
SH
Variation of V
SH
over
4 5V
s
V
IN
s
5 5V
4
126
mV
Temperature
20 mA
s
IL
s
150 mA
V
DO
LDOR Voltage Dropout
IL
e
150 mA
0 17
0 30
V
(V
IN
V
SH
)
I
S(VIN)
V
IN
Supply Current
230
394
500
m
A
Load Regulation of LDO
4 5V
s
V
IN
s
5 5V
0 002
0 015
% mA
Voltage Regulation
20 mA
s
IL
s
150 mA
Line Regulation of LDOR
4 5V
s
V
IN
s
5 5V
0 24
0 95
% V
20 mA
s
IL
s
150 mA
T
SD
Thermal Shutdown
(see Note 8)
160
C
Threshold
I
OUT
Output Load Current
(see Note 2)
300
mA
Shutdown Control
(Note 8)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 9)
I
IL(SD)
Low Level Input Current
V
IN
e
5V
b
300
b
217
b
150
m
A
for SD Pin
SD
e
0V
I
IH(SD)
High Level Input Current
SD
e
5V
310
1000
nA
for SD Pin
I
s(SD)
V
IN
Supply Current
180
285
400
m
A
in Shutdown Mode
C
in(SYNC)
Input Capacitance
SYNC
e
5V
20
pF
at SYNC Pin (Note 6)
T
A
e
27 C
2
DC Electrical Characteristics
Unless otherwise specified all limits guaranteed for
b
20 C
s
T
A
s
a
85 C P5V
e
5V and 4 5V
s
V
IN
s
5 5V V
REF
e
1 227V
SYNC(OPEN) SD(OPEN)
k
P5V
e
V
IN
e
5V (Continued)
Buffer
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 9)
V
OUT
Peak to Peak Output
SYNC
e
5V
pp
4 997
4 999
V
Voltage Swing or V
OUT
(no load)
V
OL
Low Level Output
SYNC
e
0V
0 2
2
mV
Voltage
(No Load)
V
OH
High Level Output
SYNC
e
5V
4 999
V
Voltage
(No Load)
D
VOUT
Variation of V
OUT
0 2
1
3
mV
Over Temperature
V
IH
High Level Input
3 5
5
V
SYNC SD
Voltage
V
IL
Low Level Input
0
1 5
V
SYNC SD
Voltage
I
IL(SYNC)
Low Level Input
SYNC
e
0V
5 0
42
1000
nA
Current for SYNC
I
IH(SYNC)
High Level Input
SYNC
e
5V
DC
170
215
275
m
A
Current for SYNC
I
OUT-AVE
V
OUT
Maximum Average
SYNC
e
5V
PP
100
mA
Load Current from (see Note 2)
R
ON
On Resistance
IL
e
150 mA
0 9
1 5
X
N-Channel
T
A
e
27 C
R
ON
On Resistance
IL
e
150 mA
0 7
1 2
X
P-Channel
T
A
e
27 C
R
ON
On Resistance
IL
e
150 mA
0 18
0 6
X
Matching
T
A
e
27 C
I
s
Supply Current
No SYNC
200
355
950
m
A
from P5V
3
AC Electrical Characteristics
Unless otherwise specified all limits guaranteed for T
A
e
27 C V
IN
e e
P5V
e
5V Other conditions are shown in the test
circuit Conditions that deviate from those shown in the test circuit are listed in the conditions column
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 9)
t
s(OUT)
Settling Time for V
OUT
To 98% p-p V
OUT
5 0
m
s
V
IN
e
5V (see Note 3)
Note 1
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur Operating ratings indicate conditions the device is intended
to be functional but device parameter specifications may not be guaranteed under these conditions For guaranteed specifications and test conditions see
the Electrical Characteristics
Note 2
The typical junction-ambient thermal resistance of the molded plastic SO(M) package is 155 C W Therefore the maximum current for the buffer and
voltage regulator are limited to the maximum total power dissipation that the package can allow in order to keep the die comfortably below the maximum
operating junction temperature of 125 C
Note 3
The settling time of the Power Buffer is mostly dependent upon the TFT effective series RC load The measurement of the settling time is taken for the
application when driving an all black display The number in the datasheet reflects a series RC load (R
e
6 8X and C
e
0 22 mF)
Note 4
Human Body Model 100 pF and 1 5 kX Machine Model 0X
Note 5
The precision of the P5V supply determines the output voltage swing precision of the buffer for very small loads The operating range of P5V in this
datasheet assumes a
g
4% error in V
OUT
p-p such that the total error of the signal at the output of the buffer never exceeds
g
5%
Note 6
This capacitance is dominated by the ESD protection zeners connected to the SYNC pin
Note 7
It is important to understand that the load current of the low drop-out voltage regulator must not drop below 2 mA Otherwise the internal error
amplifier will not have sufficient drive capability to the large series pass transistor If load requirements from the FPD system is less than 2 mA an external pre-
Ioad resistor must be connected from V
SH
to ground in order to satisfy the previously mentioned load requirements
Note 8
The thermal shutdown mode of the voltage regulator and the system shutdown mode are identical When either of the two functions are enabled two
results occur The pass transistor of the voltage regulator is shut off and The V
REF
pin of the LMC2626 is pulled up to the V
IN
supply to shutdown the LM2625
switching regulator
Note 9
Typical values represent the most likely parametric norm
Note 10
The typical closed loop voltage gain of the low drop-out voltage regulator is 3 44(10 7 dB)
Note 11
The minimum load current of the voltage regulator is a specific parameter used to guarantee that the regulated output voltage of the LDO regulator
stays within the limits specified in the datasheet for 1 216V
k
V
REF
k
1 242V For applications requiring minimum load current less than 20 mA regulated
output voltage limits of the voltage regulator and V
REF
voltage range must be carefully determined by characterizing the change in regulated output voltage at
the minimum load current needed
4
5