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LMH6504
Wideband, Low Power, Variable Gain Amplifier
General Description
The LMH
TM
6504 is a wideband DC coupled voltage con-
trolled gain stage followed by a high-speed current feedback
Op Amp which can directly drive a low impedance load. Gain
adjustment range is 80 dB for up to 10 MHz by varying the
gain control input voltage, V
G
.
Maximum gain is set by external components, and the gain
can be reduced all the way to cut-off. Power consumption is
110 mW with a speed of 150 MHz and a gain control band-
width (BW) of 150 MHz. Output referred DC offset voltage is
less than 55 mV over the entire gain control voltage range.
Device-to-device gain matching is within
0.42 dB at maxi-
mum gain. Furthermore, gain is tested and guaranteed over
a wide range. The output current feedback Op Amp allows
high frequency large signals (Slew Rate
>
1500 V/s) and
can also drive a heavy load current (60 mA). Near ideal input
characteristics (i.e. low input bias current, low offset, low pin
3 resistance) enable the device to be easily configured as an
inverting amplifier as well (see Application Information sec-
tion for details).
To provide ease of use when working with a single supply,
V
G
range is set to be from 0V to +2V relative to the ground
pin potential (pin 4). V
G
input impedance is high in order to
ease drive requirement. In single supply operation, the
ground pin is tied to a "virtual" half supply.
LMH6504 gain control is linear in dB for a large portion of the
total gain control range. This makes the device suitable for
AGC applications. For linear gain control applications, see
LMH6503 data sheet.
The combination of minimal external components and small
outline packages (SO8 and MSOP8) allows the LMH6504 to
be used in space-constrained applications.
Features
V
S
=
5V, T
A
= 25C, R
F
= 1 K
, R
G
= 100
, R
L
= 100
, A
V
= A
VMAX
= 9.7V/V, Typical values unless specified.
n
-3 dB BW
150 MHz
n
Gain control BW
150 MHz
n
Adjustment range (
<
10 MHz)
80 dB
n
Output offset voltage
55 mV
n
Gain matching (limit)
0.42 dB
n
Supply voltage range
7V to 12V
n
Slew rate (inverting)
1500 V/s
n
Supply Current (no load)
11 mA
n
Linear Output Current
60 mA
n
Output Voltage Swing
2.2V
n
Input Noise Voltage
4.4 nV/
n
Input Noise Current
2.6 pA/
n
THD (20 MHz, R
L
= 100
, V
O
= 2 V
PP
)
-45dBc
n
Replacement for CLC5523
Applications
n
Variable attenuator
n
AGC
n
Voltage controlled filter
n
Video imaging processing
20084311
Gain vs. V
G
Typical Application
20084302
A
VMAX
= 9.7 V/V
LMH
TM
is a trademark of National Semiconductor Corporation.
June 2004
LMH6504
W
ideband,
Low
Power
,
V
ariable
Gain
Amplifier
2004 National Semiconductor Corporation
DS200843
www.national.com
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 4):
Human Body
1000V
Machine Model
100V
Input Current
10 mA
Output Current
120 mA (Note 3)
Supply Voltages (V
+
- V
-
)
12.6V
Voltage at Input/ Output pins
V
+
+0.8V, V
-
-0.8V
Storage Temperature Range
-65C to 150C
Junction Temperature
150C
Soldering Information:
Infrared or Convection (20 sec)
235C
Wave Soldering (10 sec)
260C
Operating Ratings
(Note 1)
Supply Voltages (V
+
- V
-
)
7V to 12V
Operating Temperature Range
-40C to +85C
Thermal Resistance:
(
JC
)
(
JA
)
8 -Pin SOIC
60
165
8-Pin MSOP
65
235
Electrical Characteristics
(Note 2)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
S
=
5V, A
VMAX
= 9.7 V/V, R
F
= 1k
, R
G
= 100
, V
IN
=
0.1V, R
L
= 100
, V
G
= +2V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
Frequency Domain Response
BW
-3dB Bandwidth
V
OUT
<
1 V
PP
150
MHz
V
OUT
<
4 V
PP
, A
VMAX
= 100
58
GF
Gain Flatness
V
OUT
<
1 V
PP
0.9V
V
G
2V,
0.2 dB
40
MHz
Att Range
Flat Band (Relative to Max Gain)
Attenuation Range (Note 13)
0.2 dB Flatness, f
<
30 MHz
26
dB
0.1 dB Flatness, f
<
30 MHz
9.5
BW
Control
Gain control Bandwidth
V
G
= 1V (Note 12)
150
MHz
CT (dB)
Feed-through
V
G
= 0V, 30 MHz
(Output/Input)
-53
dB
GR
Gain Adjustment Range
f
<
10 MHz
80
dB
f
<
30 MHz
73
Time Domain Response
t
r
, t
f
Rise and Fall Time
0.5V Step
2.1
ns
OS %
Overshoot
20
%
SR
Slew Rate (Note 5)
4V Step, Non Inverting
800
V/s
4V Step, Inverting
1500
Distortion & Noise Performance
HD2
2
nd
Harmonic Distortion
2V
PP
, 20 MHz
-47
dBc
HD3
3
rd
Harmonic Distortion
55
THD
Total Harmonic Distortion
-45
En tot
Total Equivalent Input Noise
f
>
1 MHz, R
SOURCE
= 50
4.4
nV/
I
N
Input Noise Current
f
>
1 MHz
2.6
pA/
DG
Differential Gain
f = 4.43 MHz, R
L
= 100
0.45
%
DP
Differential Phase
0.13
deg
LMH6504
www.national.com
2
Electrical Characteristics
(Note 2) (Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
S
=
5V, A
VMAX
= 9.7 V/V, R
F
= 1k
, R
G
= 100
, V
IN
=
0.1V, R
L
= 100
, V
G
= +2V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
DC & Miscellaneous Performance
GACCU
Gain Accuracy
(See Application Note)
V
G
= 2.0V
0
0.45
dB
0.8V
<
V
G
<
2V
0.33
3.9
G Match
Gain Matching
(See Application Note
V
G
= 2.0V
--
0.42
dB
0.8V
<
V
G
<
2V
--
+2.8/-4.2
K
Gain Multiplier
(See Application Notes)
0.920
0.916
0.965
1.01
1.02
V/V
V
IN
NL
Input Voltage Range
R
G
Open
3.2
V
V
IN
L
R
G
= 100
0.48
0.40
0.68
I
RG_MAX
R
G
Current
Pin 3
4.8
4.0
6.8
mA
I
BIAS
Bias Current
Pin 2 (Note 7)
-1.4
-3.5
-3.7
A
TC I
BIAS
Bias Current Drift
Pin 2 (Note 8)
190
pA/C
R
IN
Input Resistance
Pin 2
7
M
C
IN
Input Capacitance
Pin 2
2.8
pF
I
VG
V
G
Bias Current
Pin 1, V
G
= 2V (Note 7)
0.9
A
TC I
VG
V
G
Bias Drift
Pin 1 (Note 8)
10
pA/C
R
VG
V
G
Input Resistance
Pin 1
25
M
C
VG
V
G
Input Capacitance
Pin 1
2.8
pF
V
OUT
L
Output Voltage Range
R
L
= 100
2.0
1.7
2.2
V
V
OUT
NL
R
L
= Open
3.1
R
OUT
Output Impedance
DC
0.12
I
OUT
Output Current
V
OUT
=
4V from Rails
60
40
80
mA
V
O
OFFSET
Output Offset Voltage
0V
<
V
G
<
2V
10
55
70
mV
+PSRR
+Power Supply Rejection Ratio
(Note 9)
Input Referred, 1V change,
V
G
= 2.2V
65
76
dB
-PSRR
-Power Supply Rejection Ratio
(Note 9)
Input Referred, 1V change,
V
G
= 2.2V
65
88
dB
I
S
Supply Current
No Load
8.5
6.5
11
15
16
mA
LMH6504
www.national.com
3
Electrical Characteristics
(Note 2) (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics.
Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
J
= T
A
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J
>
T
A
.
Note 3: The maximum output current (I
OUT
) is determined by device power dissipation limitations or value specified, whichever is lower.
Note 4: Human body model, 1.5 k
in series with 100 pF. Machine Model, 0 in series with 200 pF
Note 5: Slew rate is the average of the rising and falling slew rates.
Note 6: Typical values represent the most likely parametric norm. Bold numbers refer to over temperature limits.
Note 7: Positive current corresponds to current flowing into the device.
Note 8: Drift determined by dividing the change in parameter distribution at temperature extremes by the total temperature change.
Note 9: +PSRR definition: [|
V
OUT
/
V
+
| / A
V
], -PSRR definition: [|
V
OUT
/
V
-
| / A
V
] with 0.1V input voltage.
V
OUT
is the change in output voltage with offset shift
subtracted out.
Note 10: Gain/Phase normalized to low frequency value at 25C.
Note 11: Gain/Phase normalized to low frequency value at each setting.
Note 12: Gain control frequency response schematic:
20084316
Note 13: Flat Band Attenuation (Relative To Max Gain) Range Definition: Specified as the attenuation range from maximum which allows gain flatness specified
(either
0.2dB or
0.1dB), relative to A
VMAX
gain. For example, for f
<
30 MHz, here are the Flat Band Attenuation ranges:
0.2 dB: 19.7 dB down to -6.3 dB = 26 dB range
0.1 dB: 19.7 dB down to 10.2 dB = 9.5 dB range
Connection Diagram
8-Pin SOIC
20084301
Top View
Ordering Information
Package
Part Number
Package Marking
Transport Media
NSC Drawing
8-Pin SOIC
LMH6504MA
LMH6504MA
95 Units/Rail
M08A
LMH6504MAX
2.5k Units Tape and Reel
8-Pin MSOP
LMH6504MM
A93A
1k Units Tape and Reel
MUA08A
LMH6504MMX
3.5k Units Tape and Reel
LMH6504
www.national.com
4
Typical Performance Characteristics
Unless otherwise specified: V
S
=
5V, T
A
= 25C,
V
G
= V
GMAX
, R
F
= 1 k
, R
G
= 100
, V
IN
= 0.1V, input terminated in 50
. R
L
= 100
, Typical values.
Frequency Response Over Temperature
Frequency Response for Various V
G
20084303
20084304
Frequency Response (A
VMAX
= 2)
Inverting Frequency Response
20084346
20084344
Frequency Response for Various V
G
(A
VMAX
= 100)
(Large Signal)
Frequency Response for Various Amplitudes
20084345
20084364
LMH6504
www.national.com
5
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