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Электронный компонент: LMH6560

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LMH6560
Quad, High-Speed, Closed-Loop Buffer
General Description
The LMH6560 is a high speed, closed-loop buffer designed
for applications requiring the processing of very high fre-
quency signals. While offering a small signal bandwidth of
680MHz, and a very high slew rate of 3100V/s the
LMH6560 consumes only 46mA of quiescent current for all
four buffers. Total harmonic distortion into a load of 100
at
20MHz is -51dBc. The LMH6560 is configured internally for
a loop gain of one. Input resistance is 100k
and output
resistance is but 1.5
. Crosstalk between the buffers is only
-55dB. These characteristics make the LMH6560 an ideal
choice for the distribution of high frequency signals on
printed circuit boards. Differential gain and phase specifica-
tions of 0.10% and 0.03 respectively at 3.58MHz make the
LMH6560 well suited for the buffering of video signals.
The device is fabricated on National's high speed VIP10
process using National's proven high performance circuit
architectures.
Features
n
Closed-loop quad buffer
n
680MHz small signal bandwidth
n
3100V/s slew rate
n
0.10% / 0.03 differential gain / phase
n
-51dBc THD at 20MHz
n
Single supply operation (3V min.)
n
80mA output current
Applications
n
Multi-channel video distribution
n
Video switching and routing
n
High-speed analog multiplexing
n
Channelized EW
n
High-density buffering
n
Active filters
n
Broadcast and high definition TV systems
n
Medical imaging
n
Test equipment and instrumentation
Typical Schematic
20064235
April 2003
LMH6560
Quad,
High-Speed,
Closed-Loop
Buffer
2003 National Semiconductor Corporation
DS200642
www.national.com
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Human Body Model
2000V (Note 2)
Machine Model
200V (Note 3)
Output Short Circuit Duration
(Note 4),(Note 5)
Supply Voltage (V
+
V
-
)
13V
Voltage at Input/Output Pins
V
+
+0.8V, V
-
-0.8V
Soldering Information
Infrared or Convection (20 sec.)
235C
Wave Soldering (10 sec.)
260C
Storage Temperature Range
-65C to +150C
Junction Temperature (Note 6)
+150C
Operating Ratings
(Note 1)
Supply Voltage (V
+
V
-
)
3-10V
Operating Temperature Range
(Note 6), (Note 7)
-40C to +85C
Package Thermal Resistance (Note 6), (Note 7)
14-Pin SOIC
137C/W
14-Pin TSSOP
160C/W
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= +5V, V
-
= -5V, V
O
= V
CM
= 0V and R
L
= 100
to 0V.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
Frequency Domain Response
SSBW
Small Signal Bandwidth
V
O
<
0.5V
PP
680
MHz
GFN
Gain Flatness
<
0.1dB
V
O
<
0.5V
PP
375
MHz
FPBW
Full Power Bandwidth (-3dB)
V
O
= 2V
PP
(+10dBm)
280
MHZ
DG
Differential Gain
R
L
= 150
to 0V;
f = 3.58MHz
0.10
%
DP
Differential Phase
R
L
= 150
to 0V;
f = 3.58MHz
0.03
deg
Time Domain Response
t
r
Rise Time
3.3V Step (20-80%)
0.6
ns
t
f
Fall Time
0.7
ns
t
s
Settling Time to 0.1%
3.3V Step
9
ns
OS
Overshoot
1V Step
4
%
SR
Slew Rate
(Note 11)
3100
V/s
Distortion And Noise Performance
HD2
2
nd
Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-58
dBc
HD3
3
rd
Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-52
dBc
THD
Total Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-51
dBc
e
n
Input-Referred Voltage Noise
f = 1MHz
3
nV/
CP
1dB Compression Point
f = 10MHz
+23
dBm
CT
Amplifier Crosstalk
Receiving Amplifier:
R
S
= 50
to 0V; f = 10MHz
-55
dB
SNR
Signal to Noise Ratio
f = 5MHz; V
O
= 1V
PP
120
dB
AGM
Amplifier Gain Matching
R
L
= 2k
to 0V; f = 5MHz;
V
O
= 1V
PP
0.05
dB
Static, DC Performance
A
CL
Small Signal Voltage Gain
V
O
= 100mV
PP
R
L
= 100
to 0V
0.97
0.995
V/V
V
O
= 100mV
PP
R
L
= 2k
to 0V
0.99
0.998
V
OS
Input Offset Voltage
2
20
25
mV
TC V
OS
Temperature Coefficient Input
Offset Voltage
(Note 12)
28
V/C
LMH6560
www.national.com
2
5V Electrical Characteristics
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= +5V, V
-
= -5V, V
O
= V
CM
= 0V and R
L
= 100
to 0V.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
I
B
Input Bias Current
(Note 10)
-10
-14
-5
A
TC I
B
Temperature Coefficient Input
Bias Current
(Note 12)
-4.7
nA/C
R
OUT
Output Resistance
R
L
= 100
to 0V; f = 100kHz
1.5
R
L
= 100
to 0V; f = 10MHz
1.6
PSRR
Power Supply Rejection Ratio
V
S
=
5V to V
S
=
5.25V;
V
IN
= 0V
48
44
67
dB
I
S
Supply Current, All 4 Buffers
No Load
46
58
63
mA
Miscellaneous Performance
R
IN
Input Resistance
100
k
C
IN
Input Capacitance
2
pF
V
O
Output Swing Positive
R
L
= 100
to 0V
3.10
3.08
3.34
V
R
L
= 2k
to 0V
3.58
3.55
3.64
Output Swing Negative
R
L
= 100
to 0V
-3.34
-3.20
-3.17
V
R
L
= 2k
to 0V
-3.64
-3.58
-3.55
I
SC
Output Short Circuit Current
Sourcing: V
IN
= V
+
; V
O
= 0V
-83
mA
Sinking: V
IN
= V
-
; V
O
= 0V
83
I
O
Linear Output Current
Sourcing: V
IN
- V
O
= 0.5V
(Note 10)
-50
-42
-74
mA
Sinking: V
IN
- V
O
= -0.5V
(Note 10)
50
40
74
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= +5V, V
-
= 0V, V
O
= V
CM
= V
+
/2 and R
L
= 100
to V
+
/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
Frequency Domain Response
SSBW
Small Signal Bandwidth
V
O
<
0.5V
PP
455
MHz
GFN
Gain Flatness
<
0.1dB
V
O
<
0.5V
PP
75
MHz
FPBW
Full Power Bandwidth (-3dB)
V
O
= 2V
PP
(+10dBm)
175
MHZ
DG
Differential Gain
R
L
= 150
to V
+
/2;
f = 3.58MHz
0.4
%
DP
Differential Phase
R
L
= 150
to V
+
/2;
f = 3.58MHz
0.09
deg
Time Domain Response
t
r
Rise Time
2.3V
PP
Step (20-80%)
0.8
ns
t
f
Fall Time
1.0
ns
t
s
Settling Time to 0.1%
2.3V Step
10
ns
OS
Overshoot
1V Step
0
%
SR
Slew Rate
(Note 11)
1445
V/s
LMH6560
www.national.com
3
5V Electrical Characteristics
(Continued)
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= +5V, V
-
= 0V, V
O
= V
CM
= V
+
/2 and R
L
= 100
to V
+
/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
Distortion And Noise Performance
HD2
2
nd
Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-52
dBc
HD3
3
rd
Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-54
dBc
THD
Total Harmonic Distortion
V
O
= 2V
PP
; f = 20MHz
-50
dBc
e
n
Input-Referred Voltage Noise
f = 1MHz
3
nV/
CP
1dB Compression Point
f = 10MHz
+14
dBm
CT
Amplifier Crosstalk
Receiving Amplifier:
R
S
= 50
to V
+
/2; f = 10MHz
-55
dB
SNR
Signal to Noise Ratio
V
O
= 1V
PP
; f = 5MHz
120
dB
AGM
Amplifier Gain Matching
V
O
= 1V
PP
R
L
= 2k
to V
+
/2; f = 5MHz
0.5
dB
Static, DC Performance
A
CL
Small Signal Voltage Gain
V
O
= 100mV
PP
R
L
= 100
to V
+
/2
0.97
0.994
V/V
V
O
= 100mV
PP
R
L
= 2k
to V
+
/2
0.99
0.998
V
OS
Input Offset Voltage
2
13
15
mV
TC V
OS
Temperature Coefficient Input
Offset Voltage
(Note 12)
2
V/C
I
B
Input Bias Current
(Note 10)
-5
-5.5
-2.5
A
TC I
B
Temperature Coefficient Input
Bias Current
(Note 12)
1.3
nA/C
R
OUT
Output Resistance
R
L
= 100
to V
+
/2; f = 100kHz
1.7
R
L
= 100
to V
+
/2; f = 10MHz
2.0
PSRR
Power Supply Rejection Ratio
V
S
= +5V to V
S
= +5.5V;
V
IN
= V
S
/2
48
45
67
dB
I
S
Supply Current All 4 Buffer
No Load
21
26
30
mA
Miscellaneous Performance
R
IN
Input Resistance
16
k
C
IN
Input Capacitance
2
pF
V
O
Output Swing Positive
R
L
= 100
to V
+
/2
3.74
3.70
3.85
V
R
L
= 2k
to V
+
/2
3.92
3.90
3.96
Output Swing Negative
R
L
= 100
to V
+
/2
1.15
1.22
1.27
V
R
L
= 2k
to V
+
/2
1.04
1.08
1.10
I
SC
Output Short Circuit Current
Sourcing: V
IN
= V
+
; V
O
= V
+
/2
-40
mA
Sinking: V
IN
= V
-
; V
O
= V
+
/2
22
I
O
Linear Output Current
Sourcing: V
IN
- V
O
= 0.5V
(Note 10)
-50
-40
-64
mA
Sinking: V
IN
- V
O
= -0.5V
(Note 10)
30
20
45
LMH6560
www.national.com
4
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= 3V, V
-
= 0V, V
O
= V
CM
= V
+
/2 and R
L
= 100
to V
+
/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
Frequency Domain Response
SSBW
Small Signal Bandwidth
V
O
<
0.5V
PP
265
MHz
GFN
Gain Flatness
<
0.1dB
V
O
<
0.5V
PP
40
MHz
FPBW
Full Power Bandwidth (-3dB)
V
O
= 1V
PP
(+4.5dBm)
115
MHZ
Time Domain Response
t
r
Rise Time
1V Step (20-80%)
1.1
ns
t
f
Fall Time
1.3
ns
t
s
Settling Time to 0.1%
1V Step
11
ns
OS
Overshoot
0.5V Step
0
%
SR
Slew Rate
(Note 11)
480
V/s
Distortion And Noise Performance
HD2
2
nd
Harmonic Distortion
V
O
= 0.5V
PP
; f = 20MHz
-55
dBc
HD3
3
rd
Harmonic Distortion
V
O
= 0.5V
PP
; f = 20MHz
-61
dBc
THD
Total Harmonic Distortion
V
O
= 0.5V
PP
; f = 20MHz
-54
dBc
e
n
Input-Referred Voltage Noise
f = 1MHz
3
nV/
CP
1dB Compression Point
f = 10MHz
+4
dBm
CT
Amplifier Crosstalk
Receiving Amplifier:
R
S
= 50
to V
+
/2; f = 10MHz
-55
dB
SNR
Signal to Noise Ratio
f = 5MHz; V
O
= 1V
PP
120
dB
AGM
Amplifier Gain Matching
R
L
= 2k
to V
+
/2;
f = 5MHz; V
O
= 1V
PP
0.4
dB
Static, DC Performance
A
CL
Small Signal Voltage Gain
V
O
= 100mV
PP
R
L
= 100
to V
+
/2
0.97
0.99
V/V
V
O
= 100mV
PP
R
L
= 2k
to V
+
/2
0.99
0.997
V
OS
Input Offset Voltage
1.6
8
10
mV
TC V
OS
Temperature Coefficient Input
Offset Voltage
(Note 12)
2.6
V/C
I
B
Input Bias Current
(Note 10)
-3
-3.5
-1.4
A
TC I
B
Temperature Coefficient Input
Bias Current
(Note 12)
0.3
nA/C
R
OUT
Output Resistance
R
L
= 100
to V
+
/2; f = 100kHz
2.1
R
L
= 100
to V
+
/2; f = 10MHz
2.8
PSRR
Power Supply Rejection Ratio
V
S
= +3V to V
S
= +3.5V;
V
IN
= V
S
/2
48
46
65
dB
I
S
Supply Current, All 4 Buffers
No Load
11
15
18
mA
Miscellaneous Performance
R
IN
Input Resistance
17
k
C
IN
Input Capacitance
2
pF
LMH6560
www.national.com
5