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Электронный компонент: LMX2354TM

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LMX2354
PLLatinum Fractional N RF/ Integer N IF Dual Low Power
Frequency Synthesizer
LMX2354 2.5 GHz/550 MHz
General Description
The LMX2354 is part of a family of monolithic integrated
fractional N/Integer N frequency synthesizers designed to be
used in a local oscillator subsystem for a radio transceiver. It
is fabricated using National's 0.5 ABiC V silicon BiCMOS
process. The LMX2354 contains quadruple modulus pres-
calers along with modulo 15 or 16 fractional compensation
circuitry in the RF divider. The LMX2354 provides a continu-
ous
divide
ratio
of
80
to
32767
in
16/17/20/21
(1.2 GHz2.5 GHz) fractional mode and 40 to 16383 in
8/9/12/13 (550 MHz1.2 GHz) fractional mode. The IF cir-
cuitry for the LMX2354 contains an 8/9 prescaler, and is fully
programmable. Using a fractional N phase locked loop tech-
nique, the LMX2354 can generate very stable low noise
control signals for UHF and VHF voltage controlled oscilla-
tors (VCOs).
For the RF PLL, a highly flexible 16 level programmable
charge pump supplies output current magnitudes from 100
A to 1.6 mA. Two uncommitted CMOS outputs can be used
to provide external control signals, or configured to FastLock
mode. Serial data is transferred into the LMX2354 via a three
wire interface (Data, LE, Clock). Supply voltage can range
from 2.7V to 5.5V. The LMX2354 family features very low
current consumption; typically LMX2354 (2.5 GHz) -- 7.0
mA. The LMX2354 are available in a 24-pin TSSOP surface
mount plastic package and 24-pin CSP.
Features
n
Pin compatible/functional equivalent to the LMX2350
n
Enhanced Low Noise Fractional Engine
n
2.7V to 5.5V operation
n
Low current consumption
LMX2354: I
CC
= 7 mA typical at 3V
n
Programmable or logical power down mode:
I
CC
= 5 A typical at 3V
n
Modulo 15 or 16 fractional RF N divider supports ratios
of 1, 2, 3, 4, 5, 8, 15, or 16
n
Programmable charge pump current levels
RF 100 A to 1.6 mA in 100 A steps
IF 100 A or 800 A
n
Digital filtered lock detect
n
Available in 24-pin TSSOP and 24-pin CSP
Applications
n
Portable wireless communications (PCS/PCN, cordless)
n
Dual mode cellular telephone systems
n
Zero blind slot TDMA systems
n
Spread spectrum communication systems (CDMA)
n
Cable TV Tuners (CATV)
Functional Block Diagram
20004801
August 2001
LMX2354
PLLatinum
Fractional
N
RF/
Integer
N
I
F
Dual
Low
Power
Frequency
Synthesizer
2001 National Semiconductor Corporation
DS200048
www.national.com
Connection Diagrams
20004802
Order Number LMX2354TM or LMX2355TM
See NS Package Number MTC24
20004822
Order Number LMX2354SLB or LMX2355SLB
See NS Package Number SLB
LMX2354
www.national.com
2
Pin Descriptions
Pin No. for
TSSOP
Package
Pin No. for
CSP
Package
Pin
Name
I/O
Description
1
24
OUT0
O
Programmable CMOS output. Level of the output is controlled by IF_N [17] bit.
2
1
V
CCRF
--
RF PLL power supply voltage input. Must be equal to Vcc
IF
. May range from
2.7V to 5.5V. Bypass capacitors should be placed as close as possible to this
pin and be connected directly to the ground plane.
3
2
V
PRF
--
Power supply for RF charge pump. Must be
V
CCRF
and V
CCIF
.
4
3
CP
oRF
O
RF charge pump output. Connected to a loop filter for driving the control input
of an external VCO.
5
4
GND
--
Ground for RF PLL digital circuitry.
6
5
fin RF
I
RF prescaler input. Small signal input from the VCO.
7
6
fin RF
I
RF prescaler complimentary input. A bypass capacitor should be placed as
close as possible to this pin and be connected directly to the ground plane.
8
7
GND
--
Ground for RF PLL analog circuitry.
9
8
OSC
RF
I
Dual mode oscillator output or RF R counter input. Has a V
CC
/2 input threshold
when configured as an input and can be driven from an external CMOS or TTL
logic gate.
10
9
OSC
IF
I
Oscillator input which can be configured to drive both the IF and RF R counter
inputs or only the IF R counter depending on the state of the OSC
programming bit. (See functional description 1.1 and programming description
3.1.)
11
10
Fo/LD
O
Multiplexed output of N or R divider and RF/IF lock detect. CMOS output. (See
programming description 3.1.5.)
12
11
RF_EN
I
RF PLL Enable. Powers down RF N and R counters, prescaler, and
TRI-STATE
charge pump output when LOW. Bringing RF_EN high powers up
RF PLL depending on the state of RF_CTL_WORD. (See functional description
1.9.)
13
12
IF_EN
I
IF PLL Enable. Powers down IF N and R counters, prescaler, and TRI-STATE
charge pump output when LOW. Bringing IF_EN high powers up IF PLL
depending on the state of IF_CTL_WORD. (See functional description 1.9.)
14
13
CLOCK
I
High impedance CMOS Clock input. Data for the various counters is clocked
into the 24-bit shift register on the rising edge.
15
14
DATA
I
Binary serial data input. Data entered MSB first. The last two bits are the
control bits. High impedance CMOS input.
16
15
LE
I
Load Enable high impedance CMOS input. Data stored in the shift registers is
loaded into one of the 4 internal latches when LE goes HIGH. (See functional
description 1.7.)
17
16
GND
--
Ground for IF analog circuitry.
18
17
fin IF
I
IF prescaler complimentary input. A bypass capacitor should be placed as
close as possible to this pin and be connected directly to the ground plane.
19
18
fin IF
I
IF prescaler input. Small signal input from the VCO.
20
19
GND
--
Ground for IF digital circuitry.
21
20
CPo
IF
O
IF charge pump output. For connection to a loop filter for driving the input of an
external VCO.
22
21
V
PIF
--
Power supply for IF charge pump. Must be
V
CCRF
and V
CCIF
.
23
22
V
CCIF
--
IF power supply voltage input. Must be equal to V
CCRF
. Input may range from
2.7V to 5.5V. Bypass capacitors should be placed as close as possible to this
pin and be connected directly to the ground plane.
24
23
OUT1
O
Programmable CMOS output. Level of the output is controlled by IF_N [18] bit.
LMX2354
www.national.com
3
Absolute Maximum Ratings
(Notes 1, 2)
Parameter
Symbol
Value
Units
Min
Typ
Max
Power Supply Voltage
V
CCRF
-0.3
6.5
V
V
CCIF
-0.3
6.5
V
Vp
RF
-0.3
6.5
V
Vp
IF
-0.3
6.5
V
Voltage on any pin with GND = 0V
Vi
-0.3
V
CC
+ 0.3
V
Storage Temperature Range
Ts
-65
+150
C
Lead Temperature (Solder 4 sec.)
T
L
+260
C
Recommended Operating Conditions
Parameter
Symbol
Value
Units
Min
Typ
Max
Power Supply Voltage
V
CCRF
2.7
5.5
V
V
CCIF
V
CCRF
V
CCRF
V
V
pRF
V
CC
5.5
V
V
pIF
V
CC
5.5
V
Operating Temperature
T
A
-40
+85
C
Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 2: This Device is a high performance RF integrated circuit with an ESD rating
<
2kV and is ESD sensitive. Handling and assembly of this device should only
be done at ESD-free workstations.
Electrical Characteristics
(V
ccRF
= V
ccIF
= V
PRF
= V
PIF
= 3.0V; -40C
<
T
A
<
+85C except as specified)
All min/max specifications are guaranteed by design, or test, or statistical methods.
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
GENERAL
I
CC
Power Supply Current
RF and IF
6.0
8.5
mA
IF Only
1.1
2.0
mA
I
CC-PWDN
Power Down Current
RF_EN = IF_EN = LOW
20
50
A
f
in
RF
RF Operating Frequency
0.5
2.5
GHz
f
in
IF
IF Operating Frequency
10
550
MHz
f
OSC
Oscillator Frequency
No load on OSC
RF
2
50
MHz
f
Phase Detector Frequency
RF and IF
10
MHz
Pf
in RF
RF Input Sensitivity
V
CC
= 3.0V
-15
0
dBm
V
CC
= 5.0V
-10
0
dBm
Pf
in IF
IF Input Sensitivity
2.7V
V
CC
5.5V
-10
0
dBm
V
OSC
Oscillator Sensitivity
OSC
IF
, OSC
RF
0.5
V
CC
V
PP
CHARGE PUMP
ICPo-
source RF
RF Charge Pump Output
Current (see Programming
Description 3.2.2)
VCPo Vp/2, RF_CP_WORD =
0000
-100
A
ICPo-
sink RF
VCPo = Vp/2, RF_CP_WORD =
0000
100
A
ICPo-
source RF
VCPo = Vp/2, RF_CP_WORD =
1111
-1.6
mA
ICPo-
sink RF
VCPo = Vp/2, RF_CP_WORD =
1111
1.6
mA
LMX2354
www.national.com
4
Electrical Characteristics
(V
ccRF
= V
ccIF
= V
PRF
= V
PIF
= 3.0V; -40C
<
T
A
<
+85C except as specified)
All min/max specifications are guaranteed by design, or test, or statistical methods. (Continued)
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
ICPo-
source IF
IF Charge Pump Output
Current (see Programming
Description 3.1.4)
VCPo = Vp/2, CP_GAIN_8 = 0
-100
A
ICPo-
sink IF
VCPo = Vp/2, CP_GAIN_8 = 0
100
A
ICPo-
source IF
VCPo = Vp/2, CP_GAIN_8 = 1
-800
A
ICPo-
sink IF
VCPo = Vp/2, CP_GAIN_8 = 1
800
A
ICPo-
Tri
Charge Pump TRI-STATE
Current
0.5
VCPo
Vp -0.5
-40C
<
T
A
<
+85C
-2.5
2.5
nA
RF ICPo-
sink
vs. ICPo-
source
RF CP Sink vs. Source
Mismatch
VCPo = Vp/2 T
A
= 25C
RF ICPo=900A - 1.6mA
3.5
10
%
ICPo vs. VCPo
CP Current vs. Voltage
Variation
0.5
VCPo
Vp -0.5
T
A
= 25C RF ICPo
5
10
%
ICPo vs. T
CP Current vs
Temperature
VCPo = Vp/2
-40C
<
T
A
<
+85C RF ICPo
8
%
V
CP
Charge Pump Output
Voltage (RF only)
2.7V
V
CC
3.3V, Doubler
Enabled
2
*
V
CC
-0.5
V
DIGITAL INTERFACE (DATA, CLK, LE, EN, FoLD)
V
IH
High-level Input Voltage
(Note 3)
0.8 V
CC
V
V
IL
Low-level Input Voltage
(Note 3)
0.2 V
CC
V
I
IL
Low-level Input Current
V
IL
= 0, V
CC
= 5.5V, (Note 3)
-1.0
1.0
A
I
IH
High-level Input Current
V
IH
= V
CC
= 5.5V, (Note 3)
-1.0
1.0
A
I
IH
Oscillator Input Current
V
IH
= V
CC
= 5.5V
100
A
I
IL
Oscillator Input Current
V
IL
= 0, V
CC
= 5.5V
-100
A
V
OH
High-level Output Voltage
I
OH
= -500 A
V
CC
-0.4
V
V
OL
High-level Output Voltage
I
OL
= 500 A
0.4
V
MICROWIRE TIMING
t
CS
Data to Clock Setup Time
See Data Input Timing
50
ns
t
CH
Data to Clock Hold Time
See Data Input Timing
10
ns
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Set
Up Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
Note 3: except f
IN
, OSC
IF
and OSC
RF
LMX2354
www.national.com
5