NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings: (T
A
= +25
C)
CollectorEmitter Voltage, V
CEO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
120
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
120
V
Collector Cutoff Current
I
CBO
V
CB
= 100V, I
B
= 0
0.5
A
DC Current Gain
h
FE1
V
CE
= 12V, I
C
= 2mA
400
800
h
FE2
V
CE
= 12V, I
C
= 10mA
125
BaseEmitter Voltage
V
BE
V
CE
= 12V, I
C
= 2mA
0.75
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
0.2
V
Current GainBandwidth Product
f
T
V
CE
= 12V, I
C
= 5mA
350
MHz
Collector Output Capacitance
C
ob
V
CB
= 25V, I
E
= 0, f = 1MHz
1.6
pF
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