NTE311
Silicon NPN Transistor
Frequency Multiplier, Driver, VHF/UHF
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectoreBase Voltage, V
CBO
55V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
28.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
CER(sus)
I
C
= 5mA, R
BE
= 10
55
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 5mA, I
B
= 0
30
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
F
= 100
A, I
C
= 0
3.5
V
Collector Cutoff Current
I
CEO
V
CE
= 28V, I
B
= 0
0.02
mA
I
CEX
V
CE
= 30V, V
BE
= 1.5V, T
C
= +200
C
5.0
mA
V
CE
= 55V, V
BE
= 1.5V
0.1
mA
Emitter Cutoff Current
I
EBO
V
BE
= 3.5V, I
C
= 0
0.1
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 5V
25
200
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 100mA, I
B
= 20mAQ
1.0
V
SmallSignal Characteristics
CurrentGain Bandwidth Product
f
T
I
C
= 50mA, V
CE
= 15V, f = 200MHz
800
MHz
Output Capacitance
C
obo
V
CB
= 28V, I
E
= 0, f = 1MHz
3.0
pF
Functional Test
Amplifier Power Gain
G
pe
V
CC
= 28V, P
OUT
= 1W, f = 400MHz
10
dB
Collector Efficiency
h
V
CC
= 20V, P
OUT
= 1W, f = 400MHz
45
%
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