NTE2340
Silicon NPN Transistor
Darlington Power Amp, Switch
Features:
D
60V Zener Diode BuiltIn Between Collector and Base
D
Very Small Fluctuation in Breakdown Voltages
D
Large Energy Handling Capability
D
High Speed Switching
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1.3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector CutOff Current
I
CBO
V
CB
= 50V, I
E
= 0
100
A
Emitter CutOff Current
I
EBO
V
EB
= 7V, I
C
= 0
2
mA
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 5mA, I
B
= 0
50
70
V
DC Current Gain
h
FE (1)
V
CE
= 3V, I
C
= 4A
2000
5000
h
FE (2)
V
CE
= 3V, I
C
= 8A
500
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 8mA
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 8mA
2.0
V
Transition Frequency
f
T
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
MHz
TurnOn Time
t
on
V
CC
= 50V, I
B1
= I
B2
= 8mA,
0.5
s
Storage Time
t
stg
I
C
= 4A
4.0
s
Fall Time
t
f
1.0
s
Energy Handling Capability
E
s/b
I
C
= 1A, L = 100mH,
R
BE
= 100
50
mJ
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