NTE2636
Silicon NPN Transistor
Horizontal Deflection
w
/Internal Damper Diode
Features:
D
High Breakdown Voltage: V
CES
= 1500V
D
BuiltIn Damper Diode
D
Isolated TO3PFM Type Package
Applications:
D
TV/Character Display Horizontal Deflection Output
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CES
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Peak Current, I
C(peak)
9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Surge Current, I
C(surge)
18A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Diode Forward Current, I
D
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 500mA, I
C
= 0
6
V
Collector Cutoff Current
I
CES
V
CE
= 1500V, R
BE
= 0
500
A
DC Current Transfer Ratio
h
FE
V
CE
= 5V, I
C
= 1A
25
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 6A, I
B
= 1.2A
5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 6A, I
B
= 1.2A
1.5
V
CollectorEmitter Diode Forward Voltage
V
ECF
I
F
= 8A
2.0
V
Fall Time
t
f
I
CP
= 6A, I
B1
= 1.2A, I
B2
`
2.4A,
f
H
= 31.5kHz
0.5
s
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