NTE2594
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D
High Breakdown Voltage, High Reliability
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (PW
300
s, Duty Cycle
10%)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
55W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 500V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1.2A
15
50
V
CE
= 5V, I
C
= 6A
8
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 1.2A
18
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
160
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 6A, I
B
= 1.2A
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 6A, I
B
= 1.2A
1.5
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
800
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, R
BE
=
500
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
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