NTE123A (NPN) & NTE159M (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used "Industry Standard" complementary transis-
tors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from
audio to VHF frequencies.
Features:
D
Low Collector Saturation Voltage: 1V (Max)
D
High Current GainBandwidth Product: f
T
= 300MHz (Min) @ I
C
20mA
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
NTE123A
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
NTE123A
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
NTE123A
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
NTE123A
800mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
0.4W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
2.28mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
NTE123A
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
6.85mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE159M
1.8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
10.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= 25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
NTE123A
V
(BR)CEO
I
C
= 10mA, I
B
= 0
40
V
NTE159M
60
V
CollectorBase Breakdown Voltage
NTE123A
V
(BR)CBO
I
C
= 10
A, I
E
= 0
75
V
NTE159M
60
V
EmitterBase Breakdown Voltage
NTE123A
V
(BR)EBO
I
E
= 10
A, I
C
= 0
6
V
NTE159M
5
V
Collector Cutoff Current
NTE123A
I
CEX
V
CE
= 60V, V
EB(off)
= 3V
10
nA
NTE159M
V
CE
= 30V, V
BE
= 500mV
50
nA
Collector Cutoff Current
NTE123A
I
CBO
V
CB
= 60V, I
E
= 0
0.01
A
V
CB
= 60V, I
E
= 0, T
A
= +150
C
10
A
NTE159M
V
CB
= 50V, I
E
= 0
0.01
A
V
CB
= 50V, I
E
= 0, T
A
= +150
C
10
A
Emitter Cutoff Current (NTE123A Only)
I
EBO
V
EB
= 3V, I
C
= 0
10
nA
Base Cutoff Current
NTE123A
I
BL
V
CE
= 60V, V
EB(off)
= 3V
20
nA
NTE159M
V
CE
= 30V, V
EB(off)
= 500mV
50
nA
ON Characteristics
DC Current Gain
NTE123A
h
FE
V
CE
= 10V I
C
= 0.1mA, Note 1
35
I
C
= 1mA
50
I
C
= 10mA, Note 1
75
I
C
= 10mA, T
A
= 55
C
35
I
C
= 150mA, Note 1
100
300
V
CE
= 1V, I
C
= 150mA, Note 1
50
V
CE
= 10V I
C
= 500mA, Not e 1
40
NTE159M
I
C
= 0.1mA
75
I
C
= 1mA
100
I
C
= 10mA
100
I
C
= 150mA, Note 1
100
300
I
C
= 500mA, Note 1
50
CollectorEmitter Saturation Voltage
NTE123A
V
CE(sat)
I
C
= 150mA, I
B
= 15mA, Note 1
0.3
V
I
C
= 500mA, I
B
= 50mA, Note 1
1.0
V
NTE159M
I
C
= 150mA, I
B
= 15mA, Note 1
0.4
V
I
C
= 500mA, I
B
= 50mA, Note 1
1.6
V
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
A
= 25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Cont'd)
BaseEmitter Saturation Voltage
NTE123A
V
BE(sat)
I
C
= 150mA, I
B
= 15mA, Note 1
0.6
1.2
V
I
C
= 500mA, I
B
= 50mA, Note 1
2.0
V
NTE159M
I
C
= 150mA, I
B
= 15mA, Note 1
1.3
V
I
C
= 500mA, I
B
= 50mA
2.6
V
SmallSignal Characteristics
Current GainBandwidth Product
NTE123A
f
T
I
C
= 20mA
V
CE
= 20V, f = 100MHz,
300
MHz
NTE159M
I
C
= 50mA
Note 2
200
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz
8
pF
Input Capactiance
NTE123A
C
ibo
V
BE
= 0.5V I
C
= 0, f = 100kHz
25
pF
NTE159M
V
BE
= 2V
30
pF
Input Impedance (NTE123A Only)
h
ie
I
C
= 1mA
V
CE
= 10V, f = 1kHz
2.0
8.0
k
I
C
= 10mA
0.25
1.25
k
Voltage Feedback Ratio
h
re
I
C
= 1mA
V
CE
= 10V, f = 1kHz
8
x 10
4
(NTE123A Only)
I
C
= 10mA
4
x 10
4
SmallSignal Current Gain
h
fe
I
C
= 1mA
V
CE
= 10V, f = 1kHz
50
300
(NTE123A Only)
I
C
= 10mA
75
375
Output Admittance (NTE123A Only)
h
oe
I
C
= 1mA
V
CE
= 10V, f = 1kHz
5
35
mhos
I
C
= 10mA
25
200
mhos
CollectorBase Time Constant
(NTE123A Only)
rb
C
c
I
E
= 20mA, V
CB
= 20V, f = 31.8MHz
150
ps
Noise Figure (NTE123A Only)
NF
I
C
= 100
A, V
CE
= 10V, R
S
= 1k
,
f = 1kHz
4
dB
Real Part of CommonEmitter High
Frequency Input Impedance
(NTE123A Only)
Re(h
ie
)
I
C
= 20mA, V
CE
= 20V, f = 300MHz
60
Switching Characteristics
NTE123A
Delay Time
t
d
V
CC
= 30V, V
BE(off)
= 500mV,
10
ns
Rise Time
t
r
I
C
= 150mA, I
B1
= 15mA
25
ns
Storage Time
t
s
V
CC
= 30V, I
C
= 150mA,
225
ns
Fall Time
t
f
I
B1
= I
B2
= 15mA
60
ns
NTE159M
TurnOn Time
t
on
V
CC
= 30V, I
C
= 150mA,
26
45
ns
Delay Time
t
d
I
B1
= 15mA
6
10
ns
Rise Time
t
r
20
40
ns
TurnOff Time
t
off
V
CC
= 6V, I
C
= 150mA,
70
100
ns
Storage Time
t
s
I
B1
= I
B2
= 15mA
50
80
ns
Fall Time
t
f
20
30
ns
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
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