NTE126
Germanium Mesa Transistor, PNP,
for HighSpeed Switching Applications
Maximum Ratings:
CollectorEmitter Voltage, V
CE
15Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
15Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
2.5Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
2.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
4.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
65
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Min
Max
Unit
CollectorBase Breakdown Voltage
(I
C
= 100
Adc, I
E
= 0)
BV
CBO
15
Vdc
EmitterBase Breakdown Voltage
(I
E
= 100
Adc, I
C
= 0)
BV
EBO
2.5
Vdc
CollectorLatchUp Voltage
(V
CC
= 11.5 Vdc)
LV
CEX
11.5
Vdc
CollectorEmitter Cutoff Current
(V
CE
= 15Vdc)
I
CES
100
Adc
CollectorBase Cutoff Current
(V
CB
= 6Vdc, I
E
= 0)
I
CBO
3.0
Adc
DC Current Gain
(I
C
= 10mAdc, V
CE
= 0.3Vdc)
(I
C
= 50mAdc, V
CE
= 1Vdc)
(I
C
= 100mAdc, V
CE
= 1Vdc)
h
FE
40
40
40
CollectorEmitter Saturation Voltage
(I
C
= 10mAdc, I
B
= 1mAdc)
(I
C
= 50mAdc, I
B
= 5mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
V
CE(sat)
0.18
0.35
0.60
Vdc
Electrical Characteristics (Cont'd): (T
A
= 25
C)
Parameter
Symbol
Min
Max
Unit
BaseEmitter Saturation Voltage
(I
C
= 10mAdc, I
B
= 1mAdc)
(I
C
= 50mAdc, I
B
= 5mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
V
BE(sat)
0.30
0.40
0.40
0.50
0.75
1.00
Vdc
CurrentGainBandwidth Product
f
T
MHz
(I
E
= 20mAdc, V
CB
= 1.0Vdc, f = 100MHz)
T
300
Output Capacitance
(V
CB
= 10Vdc, I
E
= 0, f = 1MHz)
C
ob
4.0
pF
Emitter Transition Capacitance
(V
EB
= 1Vdc)
C
Te
3.5
pF
TurnOn Time
(I
C
= 10mAdc, I
B1
= 5mAdc, V
BE(off)
= 1.25Vdc)
(I
C
= 100mAdc, I
B1
= 5mAdc, V
BE(off)
= 1.25Vdc)
t
on
50
50
ns
TurnOff Time
(I
C
= 10mAdc, I
B1
= 1mAdc, I
B2
= 0.25mAdc)
(I
C
= 100mAdc, I
B1
= 5mAdc, I
B2
= 1.25mAdc)
t
off
85
85
ns
Total Control Charge
(I
C
= 10mAdc, I
B
= 1mAdc)
(I
C
= 100mAdc, I
B
= 5mAdc)
Q
T
80
125
pC
.210
(5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
45
.041 (1.05)
Emitter
Base
Collector
.018 (0.45)
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