NTE130 (NPN) & NTE219 (PNP)
Silicon Power Transistor
Audio Power Amp, Medium Speed Switch
Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case
designed for general purpose switching and amplifier applications.
Features:
D
DC Current Gain: h
FE
= 20 70 @ I
C
= 4A
D
CollectorEmitter Saturation Voltage: V
CE(sat)
= 1.1V (Max) @ I
C
= 4A
D
Excellent Safe Operating Area
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CER
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
115W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.657W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.52
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
=+25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
60
V
CollectorEmitter Sustaining Voltage
V
CER(sus)
I
C
= 200mA, R
BE
= 100
, Note 1
70
V
Collector Cutoff Current
I
CEO
V
CE
= 30V, I
B
= 0
0.7
mA
I
CEX
V
CE
= 100V, V
BE(off)
= 1.5V
1.0
mA
V
CE
= 100V, V
BE(off)
= 1.5V, T
C
= +150
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 7V, I
C
= 0
5.0
mA
Note 1. Pulse Test: Pulse Width
300
s. Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
C
=+25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 4A, V
CE
= 4V
20
70
I
C
= 10A, V
CE
= 4V
5
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 400mA
1.1
V
I
C
= 10A, I
B
= 3.3A
3.0
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 4A, V
CE
= 4V
1.5
V
Second Breakdown
Second Breakdown Collector Current
with Base Forward Biased
I
s/b
V
CE
= 40V, t = 1.0s; Nonrepetitive
2.87
A
Dynamic Characteristics
Current GainBandwidth Product
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
2.5
MHz
SmallSignal Current Gain
h
fe
I
C
= 1A, V
CE
= 4V, f = 1kHz
15
120
SmallSignal Current Gain Cutoff
Frequency
f
hfe
V
CE
= 4V, I
C
= 1A, f = 1kHz
10
kHz
Note 1. Pulse Test: Pulse Width
300
s. Duty Cycle
2%.
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and
NTE130 (NPN).
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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