NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D
Low Peak Point Current: 5
A (Max)
D
Low Emitter Reverse Current: .005
A (Typ)
D
Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Power Dissipation (Note 1), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, I
E(RMS)
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Pulse Emitter Current (Note 2), i
E
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage, V
B2E
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage, V
B2B1
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to 125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 Derate 3mW/
C increase in ambient temperature. The total power dissipation (available
power to Emitter and BaseTwo) must be limited by the external circuitry.
Note 2 Capacitor discharge 10
F or less, 30 volts or less
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
V
B2B1
= 10V, Note 3
0.56
0.75
Interbase Resistance
r
BB
V
B2B1
= 3V, I
E
= 0
4.7
7.0
9.1
k
Interbase Resistance Temperature
Coefficient
ar
BB
0.1
0.9
%/
C
Note 3. Intrinsic standoff ratio,
is defined by equation:
= V
P
V
F
V
B2B1
where
V
P
= Peak Point Emitter Voltage
V
B2B1
= Interbase Voltage
V
F
= Emitter to BaseOne Junction Diode Drop (
0.45V @ 10
A)
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Saturation Voltage
V
EB1(sat)
V
B2B1
= 10V, I
E
= 50mA, Note 4
3.5
V
Modulated Interbase Current
I
B2(mod)
V
B2B1
= 10V, I
E
= 50mA
15
mA
Emitter Reverse Current
I
EB20
V
B2E
= 30V, I
B1
= 0
0.005
12
A
Peak Point Emitter Current
I
P
V
B2B1
= 25V
1
5
A
Valley Point Current
I
V
V
B2B1
= 20V, R
B2
= 100
4
6
mA
BaseOne Peak Pulse Voltage
V
OB1
3
5
V
Note 4. Use pulse techniques: Pulse Width ~
300
s, duty cycle
2% to avoid internal heating due
to interbase modulation which may result in erroneous readings.
.030 (.762) Max
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.500
(12.7)
Min
.018 (0.45)
.041 (1.05)
45
Emitter
Base 1
Base 2/Case
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