NTE368
Silicon NPN Transistor
RF Power Output
P
O
= 60W @ 512MHz
Description:
The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D
Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 60 Watts
Minimum Gain = 4.4dB
Efficiency = 55%
D
Characterized with Series Equivalent LargeSignal Impedance Parameters
D
BuiltIn Matching Network for Broadband Operation
D
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16volt High Line
and Overdrive
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector CurrentContinuous, I
C
11A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
175W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
16
V
V
(BR)CES
I
C
= 50mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 5mA, I
C
= 0
4
V
Collector Cutoff Current
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +25
C
15
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 6A
20
70
150
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
130
150
pF
Functional Test
CommonEmitter Amplifier Power Gain
G
PE
P
OUT
= 60W, V
CC
= 12.5V, f = 470MHz
4.4
5.0
dB
Input Power
P
in
19
22
W
Collector Efficiency
55
60
%
Output Mismatch Stress
V
CC
= 16V, P
in
= 26W, f = 470MHz,
VSWR = 20:1, All Phase Angles
No Degradation in
Output Power
Note 1.
y
= Mismatch stress factor the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.215 (5.48)
.122 (3.1) Dia
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.160 (4.06)
.270
(6.85)
.405
(10.3)
Min
.725 (18.43)
.975 (24.78)
E
B
C
E
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