NTE2426 (NPN) & NTE2427 (PNP)
Silicon Complementary Transistors
Darlington Switch
Description:
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT89 type surface mount
package designed for use in industrial switching applications such as print hammer, solenoid, relay,
and lamp drivers.
Absolute Maximum Ratings:
CollectorBase Voltage (Open Emitter), V
CBO
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CER
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (Open Collector), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C, Note 1), P
tot
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature (Note 2), T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 1, Note 2), R
thJA
125K/W
. . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoTab (Note 2), R
thJTAB
10K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Note 2. Based on maximum average junction temperature in line with common industrial practice.
The resulting higher junction teperature of the output transistor part is taken into account.
Electrical Characteristics: (T
J
= +25
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CER
= 80V, V
BE
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 150mA, Note 3
1000
V
CE
= 10V, I
C
= 500mA, Note 3
2000
Note 3. Measured under pulsed conditions.
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