NTE6248
Silicon Schottky Barrier Rectifier
Features:
D
Guarding for Stress Protection
D
Low Forward Voltage
D
High Current Capability
D
High Surge Capability
Maximum Ratings and Electrical Characteristics:
(T
A
= +25
C unless otherwise specified. Resistive or inductive load.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum RMS Voltage, V
RMS
420V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Blocking Voltage, V
DC
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Rectified Forward Current (T
C
= +100
C), I
F(AV)
16A
. . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current, I
FSM
(8.3ms single half sinewave superimposed on rated load)
250A
. . . . . . . . . . . . . . . . . . . . . . .
Maximum Instantaneous Forward Voltage (I
F
= 16A), V
F
1.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Reverse Current (rated DC Blocking Voltage), I
R
T
C
= +25
C
10
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
500
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Time (T
J
= +25
C, Note 1), T
RR
50ns
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Junction Capacitance (Note 2), C
J
145pF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
1.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Reverse Recovery Test Conditions: I
F
= 500mA, I
R
= 1A, recover to 250mA.
Note 2. Measured at 1MHz and applied reverse voltage of 4V.
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