NTE2430
Silicon NPN Transistor
High Voltage Amp/Switch
(Compl to NTE2431)
Description:
The NTE2430 is a silicon NPN transistor in a SOT89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
CollectorBase Voltage (Open Emitter), V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (Open Base), V
CEO
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (Open Collector), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C, Note 1), P
tot
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 1), R
thJA
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Electrical Characteristics: (T
J
= +25
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 300V, I
B
= 0
20
nA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 50mA, I
B
= 4mA
500
mV
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 50mA, I
B
= 4mA
1.3
V
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 20mA
40
Collector Capacitance
C
c
I
E
= I
e
= 0, V
CB
= 10, f = 1MHz
2
pF
Transitional Frequency
f
T
V
CE
= 10V, I
C
= 10mA, f = 5MHz
70
MHz
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