NTE858M
NTE858SM
Integrated Circuit
Dual, LowNoise JFETInput Operational Amplifier
Description:
The NTE858M and NTE858SM are dual, lownoise JFET input operational amplifiers combining two
stateoftheart linear technologies on a single monolithic integrated circuit. Each internally com-
pensated operational amplifier has well matched high voltage JFET input devices for low input offset
voltage. The BIFET technology provides wide bandwidths and fast slew rates with low input bias cur-
rents, input offset currents, and supply currents. Moreover, these devices exhibit lownoise and low
harmonic distortion making them ideal for use in highfidelity audio amplifier applications.
Features:
D
Available in Two Different Package Types:
8Lead Mini DIP (NTE858M)
SOIC8 Surface Mount (NTE858SM)
D
Low Input Noise Voltage: 18nV
Hz Typ
D
Low Harmonic Distortion: 0.01% Typ
D
Low Input Bias and Offset Currents
D
High Input Impedance: 10
12
Typ
D
High Slew Rate: 13V/
s Typ
D
Wide Gain Bandwidth: 4MHz Typ
D
Low Supply Current: 1.4mA per Amp
Absolute Maximum Ratings:
Supply Voltage
V
CC
+18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
EE
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage, V
ID
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Range (Note 1), V
IDR
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output ShortCircuit Duration (Note 2), t
S
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
680mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above T
A
= +47
C
10mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The magnitude of the input voltage must not exceed the magnitude of the supply voltage or
15V, whichever is less.
Note 2. The output may be shorted to GND or either supply. Temperature and/or supply voltages
must be limited to ensure that power dissipation ratungs are not exceeded.
Electrical Characteristics: (V
CC
= +15V, V
EE
= 15V, T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
R
S
10k,
3
10
mV
V
CM
= 0
T
A
= 0 to +70
C
13
mV
Average Temperature
Coefficient of Input Offset
Voltage
V
IO
/
T T
A
= 0 to +70
C
10
V/
C
Input Offset Current
I
IO
V
CM
= 0,
5
50
pA
Note 3
T
A
= 0 to +70
C
2
nA
Input Bias Current
I
IB
V
CM
= 0,
30
200
pA
Note 3
T
A
= 0 to +70
C
7
nA
Input Resistance
r
i
10
12
Common Mode Input Voltage
Range
V
ICR
10 +15, 12
V
LargeSignal Voltage Gain
A
VOL
V
O
=
10V,
25
150
V/mV
R
L
2k
T
A
= 0 to +70
C
15
V/mV
Output Voltage Swing
V
O
R
L
= 10k
24
28
V
(PeaktoPeak)
R
L
10k
T
A
= 0 to +70
C
24
V
R
L
2k
20
V
Common Mode Rejection Ratio
CMRR
R
S
10k
70
100
dB
Supply Voltage Rejection Ratio
PSRR
R
S
10k
70
100
dB
Supply Current (Each Amplifier)
I
D
1.4
2.5
mA
Unity Gain Bandwidth
BW
4
MHz
Slew Rate
SR
V
IN
= 10V, R
L
= 2k, C
L
= 100pF
13
V/
s
Rise Time
t
r
0.1
s
Overshoot Factor
V
IN
= 20mV, R
L
= 2k,
C
L
= 100pF
10
%
Equivalent Input Noise Voltage
e
n
R
S
= 100
, f = 1000Hz
18
nV/
Hz
Equivalent Input Noise Current
i
n
R
S
= 100
, f = 1000Hz
0.01
pA/
Hz
Total Harmonic Distortion
THD
V
O(RMS)
= 10V, R
S
1k,
R
L
2k, f = 1000Hz
0.01
%
Channel Separation
A
V
= 100
120
dB
Note 3. Input Bias currents of JFET input operational amplifiers approximately double for every 10
C
rise in Junction Temperature. To maintain Junction Temperature as close to Ambient Tem-
perature as possible, pulse techniques must be used during test.
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