NTE2338
Silicon NPN Transistor
Darlington Power Amp
w/
Internal
Damper & Zener Diode
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
3.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
50
60
70
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 50mA, I
C
= 0
7
V
Collector Cutoff Current
I
CEO
V
CE
= 50V, R
BE
=
10
A
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 1A
2000
30000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 1mA
1.5
V
I
C
= 1.5A, I
B
= 1.5mA
2.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 1mA
2.0
V
I
C
= 1.5A, I
B
= 1.5mA
2.5
V
TurnOn Time
t
on
I
C
= 1A, I
B1
= I
B2
= 1mA
0.5
s
TurnOff Time
t
off
2.0
s
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