NTE5620
TRIAC
800V
RM
, 8A, TO220 Full Pack
The NTE5620 TRIAC is designed primarily for fullwave AC control applications, such as light dim-
mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-
trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting
state for either polarity of applied voltage with positive or negative gate triggering.
Features:
D
Blocking Voltage 800 Volts
D
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
D
Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
D
Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Peak Repetitive OffState Voltage, V
DRM
(T
J
= 40
to +125
C, 1/2 Sine Wave 50 to 60H
Z
, Gate Open, Note 1)
800V
. . . . . . . . . . . . .
OnState Current RMS, I
T(RMS)
(T
C
= +80
C, Full Cycle Sine Wave 50 to 60H
Z
, Note 2 )
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Surge Current, I
TSM
(One Full Cycle, 60Hz, T
C
= +125
C, Preceded and followed by rated current)
100A
. . . . . .
Peak Gate Power (T
C
= +80
C, Pulse Width = 2
s), P
GM
16W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (T
C
= +80
C, t = 8.3ms), P
G(AV)
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current (Pulse Width = 2
s), I
GM
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage (T
A
= +25
C, Relative Humidity
20%), V
(ISO)
1500V
. . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, CasetoSink, R
thCS
2.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
60
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2. The case temperature reference point for all T
C
measurements is a point on the center
lead of the package as close as possible to the plastic body.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
(Rated V
DRM
, T
J
= +125
C, Gate Open)
I
DRM
2
mA
Peak OnState Voltage (Either Direction)
(I
TM
= 11.3A Peak; Pulse Width = 1 to 2ms,
Duty Cycle < 2%)
V
TM
1.7
2.0
V
Peak Gate Trigger Current
(Main Terminal Voltage = 12Vdc, R
L
= 100 Ohms)
MT2(+),
G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
I
GT
50
50
50
75
mA
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12Vdc, R
L
= 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
(Main Terminal Voltage = Rated V
DRM
, R
L
= 10k
,
T
J
= +125
C)
MT2(+), G(+); MT2(+), G(); MT2(), G()
MT2(), G(+)
V
GT
0.2
0.2
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
V
Holding Current (Either Direction)
(Main Terminal Voltage = 24Vdc, Gate Open
I
T
= 200mA)
I
H
50
mA
Critical Rate of Rise of OffState Voltage
(Rated V
DRM
, Exponential Waveform, T
J
= +125
C,
Gate Open)
dv/dt
100
V/
s
Critical Rate of Rise of Commutation Voltage
(Rated V
DRM
, I
T(RMS)
= 6A, Commutating di/dt = 4.3A/ms,
Gate Unenergized, T
C
= +80
C)
dv/dt(c)
5
V/
s
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