NTE300 (NPN) & NTE307 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
7W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
50
V
CollectorEmitter Breakdown Voltage
V
(BR)EBO
I
C
= 10mA, R
BE
=
40
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 25V, I
E
= 0
1
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
1
A
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 500mA
55
300
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 50mA
1
V
BaseEmitter Voltage
V
BE
V
CE
= 4V, I
C
= 50mA
0.7
V
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