NTE3029A
InfraredEmitting Diode
Description:
The NTE3029A 940nm LED is a multipurpose device designed for use in numerous applications.
This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long
lifetime.
Features:
D
Low Cost
D
Low Degradation
D
New Mold Technology Improves Performance under Variable Environmental Conditions
D
New Lens Design offers Improved Optical Performance
Applications:
D
Low Bit Rate Communication Systems
D
Keyboards
D
Coin Handlers
D
Paper Handlers
D
Touch Screens
D
Shaft Encoders
D
General Purpose Interruptive and Reflective
Event Sensors
Absolute Maximum Ratings:
Reverse Breakdown Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Pulse
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Power Dissipation (T
A
= +25
C, Note 2), P
D
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 55
C
2mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ambient Operating Temperature Range, T
opr
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, Note 3), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.
Note 2 Measured with device soldered into a typical printed circuit board.
Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should
be applied in order to prevent the case temperature from exceeding +100
C.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Leakage Current
I
R
V
R
= 6V
0.05
100
A
Forward Voltage
V
F
I
F
= 50mA
1.3
1.5
V
Temperature Coefficient of Forward Voltage
V
F
1.6
mV/
C
Capacitance
C
V = 0V, f = 1MHz
24
50
pF
Optical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Emission Wavelength
P
I
F
= 50mA
930
940
950
nm
Spectral Half Power Wavelength
48
nm
Spectral Output Temperature Shift
0.3
nm/
C
Axial Power Output Intensity
P
O
I
F
= 20mA, Note 4
50
150
W/ sq cm
Intensity Per Unit Solid Angle
E
e
I
F
= 20mA, Note 4
0.2
0.65
mW/Sr
Power HalfAngle
20
Rise Time and Fall Time
t
r
, t
f
1.0
s
Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under
test.
.120
(3.04)
.045 (1.14) Dia
.160 (4.06)
.020 (.508)
.060 (1.52)
.100 (2.54)
.125
(3.17)
.750
(19.05)
Max
.103
(2.62)
.168
(4.27)
K
A
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