NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= 25
C), P
D
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= 25
C), P
D
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
12mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
83.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, R
JA
200
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com-
plementary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
80
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
80
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
50
nA
V
CB
= 50V, I
E
= 0, T
A
= +75
C
5
A
Emitter Cutoff Current
I
EBO
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 0.1mA
25
V
CE
= 10V, I
C
= 1mA
40
V
CE
= 10V, I
C
= 10mA
50
250
V
CE
= 10V, I
C
= 100mA
40
V
CE
= 10V, I
C
= 500mA
30
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA, Note 2
0.15
V
I
C
= 500mA, I
B
= 50mA, Note 2
0.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA, Note 2
0.9
V
I
C
= 500mA, I
B
= 50mA, Note 2
1.1
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 500mA, V
CE
= 500mV
1.1
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 50mA, V
CE
= 10V, f = 100MHz
100
500
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 100kHz
30
pF
Input Capacitance
Ci
b
V
CB
= 10V, I
E
= 0, f = 100kHz
110
pF
Input Impedance
h
ie
I
C
= 10mA, V
CE
= 10V, f = 1kHz
550
k
Voltage Feedback Ratio
h
re
I
C
= 10mA, V
CE
= 10V, f = 1kHz
100
x 10
6
SmallSignal Current Gain
h
fe
I
C
= 10mA, V
CE
= 10V, f = 1kHz
200
Output Admittance
h
oe
I
C
= 10mA, V
CE
= 10V, f = 1kHz
100
mhos
Noise Figure
NF
I
C
= 100
A, V
CE
= 10V, R
S
= 1k
,
f = 1kHz
3
dB
Switching Characteristics
TurnOn Time
t
on
V
CC
= 30V, V
BE(off)
= 3.8V,
I
C
= 500mA, I
B1
= 50mA
100
ns
TurnOff Time
t
off
V
CC
= 30V, I
C
= 500mA,
I
B1
= I
B2
= 50mA
400
ns
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
PDF 
ZIP