NTE16003
Silicon NPN Transistor
RF Power Output, P
O
= 7W, 175MHz
Description:
The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit-
ters results in high RF current handling capability, high power gain, low base resistance, and low out-
put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli-
er circuits and is specifically designed for operation in the VHFUHF region.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
65V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
(max)
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
11.6W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
66.4mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
+15
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CEO
V
CE
= 30V, I
B
= 0
0.1
mA
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
65
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
4
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 0 to 200mA, I
B
= 0, Note 1
40
V
CollectorEmitter Breakdown Voltage V
(BR)CEV
I
C
= 0 to 200mA, V
BE
= 1.5V,
Note 1
65
V
Output Capacitance
C
ob
V
CB
= 30V, I
C
= 0, f = 1MHz
10
pF
Current GainBandwidth Product
f
T
V
CE
= 28V, I
C
= 150mA,
f = 100MHz
500
MHz
RF Power Output, Class C,
Unneutralized
P
out
f = 175MHz, V
CE
= 28V,
P
IN
= 1W
3
W
Note 1. Pulsed through 25mH inductor, Duty Factor = 50%
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