NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.057mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
17.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO)
I
C
= 100mA, I
B
= 0
75
V
Collector Cutoff Current
I
CEX
V
CE
= 100V, V
BE
= 1.5V
0.1
mA
V
CE
= 70V, V
BE
= 1.5V, T
C
= +150
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 7V, I
C
= 0
0.1
mA
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 500mA, V
CE
= 4V
30
130
I
C
= 1A, V
CE
= 2V
10
CollectorEmitter Saturation Voltage
NTE16004
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
0.7
V
NTE16005
0.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 500mA, V
CE
= 4V
1.1
V
SmallSignal Characteristics
SmallSignal Current Gain
h
fe
I
C
= 50mA, V
CE
= 4V, f = 10MHz
5
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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