NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Peak Repetitive OffState Voltage (T
J
= 40
to +125
C, R
GK
= 1k
), V
DRM
, V
RRM
NTE5498
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5499
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (All Conduction Angles, T
C
= +85
C), I
T(RMS)
12A
. . . . . . . . . . . . . . . . . . . . .
Average OnState Current (Half Cycle, 180
Conduction Angle, T
C
= +85
C), I
T(AV)
7.6A
. . . . . . . .
NonRepetitive OnState Current (Half Cycle, 60Hz), I
TSM
132A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive OnState Current (Half Cycle, 50Hz), I
TSM
120A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
2
t
72A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current (10
s Max), I
GM
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Dissipation (10
s Max), P
GM
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Dissipation (20ms Max), P
G(AV)
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
+250
C
. . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OffState Leakage Current
I
DRM
,
V
DRM
+ V
RRM
, R
GK
= 1k
T
J
= +125
C
1.5
mA
I
RRM
T
J
= +25
C
5.0
A
OnState Voltage
V
T
I
T
= 24A, T
J
= +25
C
1.8
V
OnState Threshold Voltage
V
T(TO)
T
J
= +125
C
1.0
V
OnState Slope Resistance
r
T
T
J
= +125
C
36
m
GateTrigger Current
I
GT
V
D
= 7V
5
10
mA
GateTrigger Voltage
V
GT
V
D
= 7V
2.0
V
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