NTE5621 thru NTE5627
TRIAC 10 Amp
Description:
The NTE5621 through NTE5627 TRIACs are designed primarily for fullwave AC control applica-
tions, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full
wave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate
triggering.
Features:
D
All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability
D
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation
and Durability.
D
Gate Triggering Guaranteed in Two Modes
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (T
J
= +100
C, Note 2), V
DRM
NTE5621
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5622
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5623
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5627
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OnState Current RMS (T
C
= +75
C), I
T(RMS)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (One Full Cycle, 60Hz, T
J
= 40
to +100
C), I
TSM
100A
. . . . . . . . . . . . . . . . . .
Circuit Fusing Considerations (T
J
= 40
to +100
C, t = 1.0 to 8.3ms), I
2
t
40A
2
s
. . . . . . . . . . . . . . . .
Peak Gate Power, P
GM
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mounting Torque (632 Screw, Note 3)
12in. lb.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, CasetoAmbient, R
thJA
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE5622 and NTE5627 are discontinued devices and no longer available.
Note 2. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 3. Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does
not appreciably lower casetosink thermal resistance. Anode lead and heatsink contact
pad are common.
Note 4. For soldering purposes (either terminal connection or device mounting), soldering tempera-
tures shall not exceed +230
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Peak Blocking Current (Either Direction)
(Rated V
DRM
, T
J
= 100
C, Gate Open)
I
DRM
2
mA
OnState Voltage (Either Direction)
(I
TM
= 14A Peak)
V
TM
1.3
1.8
V
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12V, R
L
= 100
)
MT
2
(+), G (+); MT
2
(), G ()
I
GT
50
mA
Gate Trigger Voltage (Continuous DC)
(Main Terminal Voltage = 12V, R
L
= 100
)
MT
2
(+), G (+); MT
2
(), G ()
V
GT
0.9
2.0
V
Gate Trigger Voltage (Continuous DC All Modes)
(Main Terminal Voltage = Rated V
DRM
, R
L
= 100
, T
J
= +100
C)
V
GD
0.2
V
Holding Current (Either Direction)
(Main Terminal Voltage = 12Vdc, Gate Open, I
T
= 100mA)
I
H
50
mA
TurnOn Time
(I
TM
= 14A, I
GT
= 100mA)
t
on
1.5
s
Blocking Voltage Application Rate at Commutation
(At V
DRM
, T
J
= +75
C, Gate Open)
dv/dt
5
V/
s
.530 (13.4) Max
.668
(17.0)
Max
.655
(16.6)
Max
.166 (4.23)
.150 (3.82) Max
Heat Sink Contact
Area (Bottom)
.143 (3.65) Dia Thru
MT
2
(Heat Sink Area)
MT
1
Gate
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